HIT 2SK3135-S, 2SK3135-L Datasheet

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2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-695B (Z)
3rd. Edition
February 1999
Features
R
DS(on)
= 6 m typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
1
2
3
2SK3135(L),2SK3135(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
75 A
Drain peak current I
D(pulse)
Note 1
300 A
Body-drain diode reverse drain current I
DR
75 A
Avalanche current I
AP
Note 3
50 A
Avalanche energy E
AR
Note 3
214 mJ
Channel dissipation Pch
Note 2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
2SK3135(L),2SK3135(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60——V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
——±0.1 µAV
GS
= ±20 V, V
DS
= 0
Zero gate voltege drain current I
DSS
——10µAV
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 2.5 V I
D
= 1 mA, V
DS
= 10 V
Note 1
Static drain to source on state R
DS(on)
6.0 7.5 m I
D
= 30 A, V
GS
= 10 V
Note 1
resistance 8.0 12 m I
D
= 30 A, V
GS
= 4 V
Note 1
Forward transfer admittance |y
fs
|5080—S I
D
= 30 A, V
DS
= 10 V
Note 1
Input capacitance Ciss 7100 pF V
DS
= 10 V
Output capacitance Coss 1000 pF V
GS
= 0
Reverse transfer capacitance Crss 300 pF f = 1 MHz
Total gate charge Qg 125 nc V
DD
= 25 V
Gate to source charge Qgs 25 nc V
GS
= 10 V
Gate to drain charge Qgd 25 nc I
D
= 75 A
Turn-on delay time t
d(on)
60 ns V
GS
= 10 V, I
D
= 40 A
Rise time t
r
300 ns R
L
= 0.75
Turn-off delay time t
d(off)
520 ns
Fall time t
f
330 ns
Body–drain diode forward voltage V
DF
1.05 V I
F
= 75 A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
90 ns I
F
= 75 A, V
GS
= 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
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