2SK3207
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-758A(Z)
Target Specification 2nd. Edition
Feb 1999
Features
•Low on-resistance RDS = 70 mΩ typ.
•High speed switching
•4V gate drive device can be driven from 5V source
Outline
TO–220FM
D |
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G |
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1. |
Gate |
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2. |
Drain |
1 |
2 |
3. |
Source |
3 |
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S
2SK3207
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
150 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
18 |
A |
|
|
|
|
Drain peak current |
ID(pulse)*1 |
72 |
A |
Body-drain diode reverse drain current |
IDR |
18 |
A |
Avalanche current |
IAP*3 |
18 |
A |
|
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|
Avalanche energy |
EAR*3 |
24 |
mJ |
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Channel dissipation |
Pch*2 |
35 |
W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50Ω
2