HIT 2SK3289 Datasheet

0 (0)
Silicon N Channel MOS FET
High Speed Switching
Features
Low on-resistance
RDS =1.26 typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 typ. (VGS = 4 V , ID = 50 mA)
4 V gate drive device.
Small package (CMPAK)
Outline
2SK3289
ADE-208-743C (Z)
4th.Edition.
June 1999
CMPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SK3289
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note 2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10 µs, duty cycle 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage Gate to source breakdown
V
(BR)GSS
voltage Gate to source leak current I Zero gate voltege drain
GSS
I
DSS
current Gate to source cutoff voltage V Static drain to source on state R resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 145 220 mS I Input capacitance Ciss 6 pF VDS = 10 V Output capacitance Coss 18 pF VGS = 0 Reverse transfer capacitance Crss 2 pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is AN See characteristics curves of 2SK3287
30 V ID = 100 µA, VGS = 0
±20 V IG = ±100 µA, VDS = 0
——±5 µAVGS = ±16 V, VDS = 0 ——1 µAVDS = 30 V, VGS = 0
1.3 2.3 V ID = 10µA, VDS = 5 V — 1.26 3.44 I 2.8 3.44 I
200 ns ID = 150 mA, VGS = 10 V — 600 ns RL = 66.6 1100 ns — 1100 ns
30 V ±20 V 300 mA
1.2 A 300 mA 300 mW
= 150 mA,VGS = 10 V
D
= 50 mA,VGS = 4 V
D
= 150 mA, VDS =10 V
D
Note 3
Note 3
Note 3
2
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