HIT BB102C Datasheet

BB102C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-588 (Z)

1st. Edition

November 1997

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

• Note 1 Marking is “BW–”.

• Note 2 BB302C is individual type number of HITACHI BBFET.

BB102C

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DS

12 V

Gate1 to source voltage V

G1S

+10

–0

V

Gate2 to source voltage V

G2S

±10 V

Drain current I

D

25 mA

Channel power dissipation Pch 100 mW

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

12 — — V I

D

= 200µA, V

G1S

= V

G2S

= 0

Gate1 to source breakdown

voltage

V

(BR)G1SS

+10 — — V I

G1

= +10µA, V

G2S

= V

DS

= 0

Gate2 to source breakdown

voltage

V

(BR)G2SS

±10 — — V I

G2

= ±10µA, V

G1S

= V

DS

= 0

Gate1 to source cutoff current I

G1SS

— — +100 nA V

G1S

= +9V, V

G2S

= V

DS

= 0

Gate2 to source cutoff current I

G2SS

——±100 nA V

G2S

= ±9V, V

G1S

= V

DS

= 0

Gate1 to source cutoff voltage V

G1S(off)

0.1 — 0.8 V V

DS

= 9V, V

G2S

= 6V, I

D

= 100µA

Gate2 to source cutoff voltage V

G2S(off)

0.5 — 1.1 V V

DS

= 9V, V

G1S

= 9V, I

D

= 100µA

Drain current I

D(op)

10 15 20 mA V

D

S

= 9V, V

G

1

= 9V, V

G

2

S

= 6V

R

G

= 560kΩ

Forward transfer admittance |y

fs

| 16 21 — mS V

D

S

= 9V, V

G

1

= 9V, V

G

2

S

=6V

R

G

= 560kΩ, f = 1kHz

Input capacitance c

iss

1.2 1.6 2.2 pF V

DS

= 9V, V

G1

= 9V

Output capacitance c

oss

0.7 1.1 1.5 pF V

G2S

=6V, R

G

= 560kΩ

Reverse transfer capacitance c

rss

— 0.011 0.03 pF f = 1MHz

Power gain PG 16 20 — dB V

DS

= 9V, V

G1

= 9V, V

G2S

=6V

Noise figure NF — 2.1 3.1 dB R

G

= 120kΩ, f = 900MHz

BB102C

3

Main Characteristics

Gate 1

Source

Drain

Gate 2

R

G

A

I

D

V

G2 V

G1

Output

Input

V = 6 to 0.3 V

AGC

V = 9 V

DS

R

G

V = 9 V

GG

BBFET

RFC

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

D(op)

Application Circuit

BB102C

4

200

150

100

50

0

50 100 150 200

25

20

15

10

5

0

1.2 2.4 3.8 4.8 6.0

20

16

12

8

4

0

246810

0

246810

25

20

15

10

5

R = 2.2 M

G

Ω

V = 6 V

V = V

G2S

G1 DS

V = 9 V

R = 470 k

Ω

DS

G

270 k

Ω

330 k

Ω

390 k

Ω

470 k

Ω

560 k

Ω

680 k

Ω

1 MΩ

1.5 MΩ

820 k

Ω

R = 2.2 M

G

Ω

270 k

Ω

330 k

Ω

390 k

Ω

470 k

Ω

560 k

Ω

680 k

Ω

1 MΩ

1.5 MΩ

820 k

Ω

V = V = 9 V

DS

G1

V = 1 V

G2S

6 V

5 V

4 V

3 V

2 V

Channel Power Dissipation Pch (mW)

Ambient Temperature Ta (¡C)

Maximum Channel Power

Dissipation Curve

Drain to Source Voltage V (V)

DS

Drain Current I (mA)

D

Typical Output Characteristics

Drain Current I (mA)

D

Drain Current I (mA)

D

Gate2 to Source Voltage V (V)

G2S

Gate1 Voltage V (V)

G1

Drain Current vs. Gate1 Voltage

Drain Current vs.

Gate2 to Source Voltage