3SK290
Silicon N-Channel Dual Gate MOS FET
ADE-208-271 1st. Edition
Application
UHF RF amplifier
Features
∙Low noise figure.
NF = 2.3 dB Typ. at f = 900 MHz
∙High gain.
PG = 19.3 dB Typ. at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK290
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate 1 to source voltage |
VG1S |
±8 |
V |
Gate 2 to source voltage |
VG2S |
±8 |
V |
Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
100 |
mW |
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Channel temperature |
Tch |
125 |
°C |
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Storage temperature |
Tstg |
–55 to +125 |
°C |
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Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
3SK290
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSX |
12 |
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— |
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— |
V |
I |
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D = 200 μA, VG1S = –3 V, |
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voltage |
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VG2S = –3 V |
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Gate 1 to source breakdown |
V(BR)G1SS |
±8 |
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— |
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— |
V |
I |
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G1 = ±10 μA, VG2S = VDS = 0 |
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voltage |
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Gate 2 to source breakdown |
V(BR)G2SS |
±8 |
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— |
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— |
V |
I |
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G2 = ±10 μA, VG1S = VDS = 0 |
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voltage |
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Gate 1 cutoff current |
IG1SS |
— |
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— |
±100 |
nA |
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VG1S = ±6 V, VG2S = VDS = 0 |
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Gate 2 cutoff current |
IG2SS |
— |
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— |
±100 |
nA |
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VG2S = ±6 V, VG1S = VDS = 0 |
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Drain current |
IDS(on) |
0.5 |
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— |
10 |
mA |
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V DS = 6 V, VG1S = 0.5 V, |
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VG2S = 3 V |
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Gate 1 to source cutoff voltage |
VG1S(off) |
–0.6 |
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— |
+0.5 |
V |
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V DS = 10 V, VG2S = 3 V, |
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ID = 100 μA |
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Gate 2 to source cutoff voltage |
VG2S(off) |
0 |
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— |
+1.0 |
V |
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V DS = 10 V, VG1S = 3 V, |
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ID = 100 μA |
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Forward transfer admittance |
|yfs| |
16 |
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22 |
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— |
mS |
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V DS = 6 V, VG2S = 3 V, |
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ID = 10 mA, f = 1 kHz |
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Input capacitance |
Ciss |
1.2 |
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1.8 |
2.2 |
pF |
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VDS = 6 V, VG2S = 3V, |
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ID = 10 mA, f = 1 MHz |
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Output capacitance |
Coss |
0.7 |
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1.2 |
1.4 |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.02 |
0.03 |
pF |
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Power gain |
PG |
17 |
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19.3 |
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— |
dB |
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V DS = 4 V, VG2S = 3 V, |
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ID = 10 mA, f = 900 MHz |
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Noise figure |
NF |
— |
2.3 |
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2.8 |
dB |
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Note: Marking is “ZJ–”. |
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