HIT 3SK290 Datasheet

3SK290

Silicon N-Channel Dual Gate MOS FET

ADE-208-271 1st. Edition

Application

UHF RF amplifier

Features

∙Low noise figure.

NF = 2.3 dB Typ. at f = 900 MHz

∙High gain.

PG = 19.3 dB Typ. at f = 900 MHz

Outline

CMPAK–4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK290

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDS	12	V
Gate 1 to source voltage	VG1S	±8	V
Gate 2 to source voltage	VG2S	±8	V
Drain current	ID	25	mA
Channel power dissipation	Pch	100	mW
Channel temperature	Tch	125	°C
Storage temperature	Tstg	–55 to +125	°C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

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3SK290

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

V(BR)DSX

12

—

—

V

I

D = 200 μA, VG1S = –3 V,

voltage

VG2S = –3 V

Gate 1 to source breakdown

V(BR)G1SS

±8

—

—

V

I

G1 = ±10 μA, VG2S = VDS = 0

voltage

Gate 2 to source breakdown

V(BR)G2SS

±8

—

—

V

I

G2 = ±10 μA, VG1S = VDS = 0

voltage

Gate 1 cutoff current

IG1SS

—

—

±100

nA

VG1S = ±6 V, VG2S = VDS = 0

Gate 2 cutoff current

IG2SS

—

—

±100

nA

VG2S = ±6 V, VG1S = VDS = 0

Drain current

IDS(on)

0.5

—

10

mA

V DS = 6 V, VG1S = 0.5 V,

VG2S = 3 V

Gate 1 to source cutoff voltage

VG1S(off)

–0.6

—

+0.5

V

V DS = 10 V, VG2S = 3 V,

ID = 100 μA

Gate 2 to source cutoff voltage

VG2S(off)

0

—

+1.0

V

V DS = 10 V, VG1S = 3 V,

ID = 100 μA

Forward transfer admittance

|yfs|

16

22

—

mS

V DS = 6 V, VG2S = 3 V,

ID = 10 mA, f = 1 kHz

Input capacitance

Ciss

1.2

1.8

2.2

pF

VDS = 6 V, VG2S = 3V,

ID = 10 mA, f = 1 MHz

Output capacitance

Coss

0.7

1.2

1.4

pF

Reverse transfer capacitance

Crss

—

0.02

0.03

pF

Power gain

PG

17

19.3

—

dB

V DS = 4 V, VG2S = 3 V,

ID = 10 mA, f = 900 MHz

Noise figure

NF

—

2.3

2.8

dB

Note: Marking is “ZJ–”.

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