2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-720 (Z)
Target Specification
1st. Edition
February 1999
Features
•Low on-resistance RDS(on) = 7 mΩ typ.
•Low drive current
•4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 |
4 |
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D |
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1 |
2 |
3 |
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G |
1 2 |
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1. |
Gate |
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3 |
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2. |
Drain |
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3. |
Source |
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4. |
Drain |
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S |
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2SK3133(L),2SK3133(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
50 |
A |
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Drain peak current |
Note 1 |
200 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
50 |
A |
Channel dissipation |
Pch Note 2 |
50 |
W |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
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Drain to source breakdown voltage |
V(BR)DSS |
30 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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Gate to source leak current |
IGSS |
— |
— |
±0.1 |
µA |
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VGS = ±20 V, VDS = 0 |
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Zero gate voltege drain current |
IDSS |
— |
— |
10 |
µA |
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VDS = 30 V, VGS = 0 |
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Gate to source cutoff voltage |
V |
1.0 |
— |
2.5 |
V |
I |
D |
= 1 mA, V |
DS |
= 10 V Note 1 |
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GS(off) |
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Static drain to source on state |
RDS(on) |
— |
7 |
10 |
m Ω |
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ID = 25 A, VGS = 10 V Note 1 |
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resistance |
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— |
12 |
18 |
m Ω |
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ID = 25 A, VGS = 4 V Note 1 |
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Forward transfer admittance |
|yfs| |
TBD |
TBD |
— |
S |
I D = 25 A, VDS = 10 V Note 1 |
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Input capacitance |
Ciss |
— |
TBD |
— |
pF |
V |
DS = 10V |
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Output capacitance |
Coss |
— |
TBD |
— |
pF |
V |
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GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
TBD |
— |
pF |
f = 1 MHz |
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Total gate charge |
Qg |
— |
TBD |
— |
nc |
V |
DD = 10 V |
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Gate to source charge |
Qgs |
— |
TBD |
— |
nc |
V |
GS = 10 V |
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Gate to drain charge |
Qgd |
— |
TBD |
— |
nc |
I |
D = 50 A |
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Turn-on delay time |
td(on) |
— |
TBD |
— |
ns |
V |
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GS = 10 V, ID = 25 A |
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Rise time |
tr |
— |
TBD |
— |
ns |
R |
L = 0.4 Ω |
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Turn-off delay time |
td(off) |
— |
TBD |
— |
ns |
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Fall time |
tf |
— |
TBD |
— |
ns |
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Body–drain diode forward voltage |
VDF |
— |
TBD |
— |
V |
I |
F = 50 A, VGS = 0 |
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Body–drain diode reverse |
trr |
— |
TBD |
— |
ns |
I |
F = 50 A, VGS = 0 |
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recovery time |
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diF/ dt = 50 A/ µs |
Note: 1. Pulse test
2