2SK3229
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-766(Z) Target specification 1st. Edition December 1998
Features
•Low on-resistance RDS(on) =6mΩ typ.
•Low drive current
•4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G
1 2 |
3 |
1. |
Gate |
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|||
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2. |
Drain |
S |
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3. |
Source |
2SK3229
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
80 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
60 |
A |
|
|
|
|
Drain peak current |
ID(pulse)*1 |
240 |
A |
Body-drain diode reverse drain current |
IDR |
60 |
A |
Avalanche current |
IAP*3 |
50 |
A |
|
|
|
|
Avalanche energy |
EAR*3 |
181 |
mJ |
|
|
|
|
Channel dissipation |
Pch*2 |
35 |
W |
|
|
|
|
Channel temperature |
Tch |
150 |
°C |
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|
|
|
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50Ω
2