HIT 2SK3229 Datasheet

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HIT 2SK3229 Datasheet

2SK3229

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-766(Z) Target specification 1st. Edition December 1998

Features

Low on-resistance RDS(on) =6mΩ typ.

Low drive current

4V gate drive device can be driven from 5V source

Outline

TO–220CFM

D

G

1 2

3

1.

Gate

 

 

 

2.

Drain

S

 

3.

Source

2SK3229

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

80

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

60

A

 

 

 

 

Drain peak current

ID(pulse)*1

240

A

Body-drain diode reverse drain current

IDR

60

A

Avalanche current

IAP*3

50

A

 

 

 

 

Avalanche energy

EAR*3

181

mJ

 

 

 

 

Channel dissipation

Pch*2

35

W

 

 

 

 

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50Ω

2

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