HIT 2SK494 Datasheet

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HIT 2SK494 Datasheet

2SK494

Silicon N-Channel Junction FET

Application

Low frequency / High frequency amplifier

Outline

SPAK

1 2 3

1.

Drain

2.

Gate

 

3.

Source

2SK494

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

22

V

Gate to source voltage

VGSO

–22

V

Drain current

ID

100

mA

 

 

 

 

Gate current

IG

10

mA

 

 

 

 

Channel power dissipation

Pch

300

mW

 

 

 

 

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Gate to source breakdown

 

V(BR)GSS

–22

V

I

G = –10 µA, VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate cutoff current

 

IGSS

–10

nA

V

GS = –15 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

–2.5

V

V

DS = 5

V, ID = 10 µA

Drain current

 

 

IDSS*1

6

40

mA

V

DS = 5 V, VGS = 0, Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward transfer admittance

 

 

y

fs

 

20

mS

V

DS = 5

V, ID = 10 mA,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input capacitance

 

Ciss

9.0

11.0

pF

V DS = 5

V, VGS = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

2.8

4.0

pF

V DS = 5

V, VGS = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

Noise figure

 

 

NF

0.5

3.0

dB

V DS = 5

V, ID = 1 mA,

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz, Rg = 1 kΩ

 

 

 

 

 

 

 

Note: 1. The 2SK494 is grouped by IDSS as follows.

 

 

 

 

 

 

Grade

B

C

 

 

 

 

D

 

E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IDSS

6 to 14

12 to 22

18 to 30

 

26 to 40

 

 

 

 

 

See character curves 2SK435.

2

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