
2SK494
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
1. Drain
2. Gate
3. Source
SPAK
1
2
3

2SK494
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DS
22 V
Gate to source voltage V
GSO
–22 V
Drain current I
D
100 mA
Gate current I
G
10 mA
Channel power dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to source breakdown
voltage
V
(BR)GSS
–22 — — V I
G
= –10 µA, V
DS
= 0
Gate cutoff current I
GSS
— — –10 nA V
GS
= –15 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
— — –2.5 V V
DS
= 5 V, I
D
= 10 µA
Drain current I
DSS
*
1
6 — 40 mA V
DS
= 5 V, V
GS
= 0, Pulse test
Forward transfer admittance
fs
y
20 — — mS V
DS
= 5 V, I
D
= 10 mA,
f = 1 kHz
Input capacitance Ciss — 9.0 11.0 pF V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Reverse transfer capacitance Crss — 2.8 4.0 pF V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Noise figure NF — 0.5 3.0 dB V
DS
= 5 V, I
D
= 1 mA,
f = 1 kHz, Rg = 1 kΩ
Note: 1. The 2SK494 is grouped by I
DSS
as follows.
Grade B C D E
I
DSS
6 to 14 12 to 22 18 to 30 26 to 40
See character curves 2SK435.