HIT 2SK494 Datasheet

2SK494

Silicon N-Channel Junction FET

Application

Low frequency / High frequency amplifier

Outline

1. Drain

2. Gate

3. Source

SPAK

1

2

3

2SK494

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DS

22 V

Gate to source voltage V

GSO

–22 V

Drain current I

D

100 mA

Gate current I

G

10 mA

Channel power dissipation Pch 300 mW

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to source breakdown

voltage

V

(BR)GSS

–22 — — V I

G

= –10 µA, V

DS

= 0

Gate cutoff current I

GSS

— — –10 nA V

GS

= –15 V, V

DS

= 0

Gate to source cutoff voltage V

GS(off)

— — –2.5 V V

DS

= 5 V, I

D

= 10 µA

Drain current I

DSS

*

1

6 — 40 mA V

DS

= 5 V, V

GS

= 0, Pulse test

Forward transfer admittance

fs

y

20 — — mS V

DS

= 5 V, I

D

= 10 mA,

f = 1 kHz

Input capacitance Ciss — 9.0 11.0 pF V

DS

= 5 V, V

GS

= 0, f = 1 MHz

Reverse transfer capacitance Crss — 2.8 4.0 pF V

DS

= 5 V, V

GS

= 0, f = 1 MHz

Noise figure NF — 0.5 3.0 dB V

DS

= 5 V, I

D

= 1 mA,

f = 1 kHz, Rg = 1 kΩ

Note: 1. The 2SK494 is grouped by I

DSS

as follows.

Grade B C D E

I

DSS

6 to 14 12 to 22 18 to 30 26 to 40

See character curves 2SK435.