HIT 3SK186 Datasheet

3SK186

Silicon N-Channel Dual Gate MOS FET

Application

UHF TV tuner RF amplifier

Outline

MPAK-4

2

3

	1
4	1.	Source
	2.	Gate1
	3.	Gate2
	4.	Drain

3SK186

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDS	12	V
Gate 1 to source voltage	VG1S	±10	V
Gate 2 to source voltage	VG2S	±10	V
Drain current	ID	35	mA
Channel power dissipation	Pch	150	mW
Channel temperature	Tch	125	°C
Storage temperature	Tstg	–55 to +125	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

V(BR)DSX

12

—

—

V

V

G1S = VG2S = –5 V,

voltage

ID = 200 A

Gate 1 to source breakdown

V(BR)G1SS

±10

—

—

V

I

G1 = ±10 A, VG2S = VDS = 0

voltage

Gate 2 to source breakdown

V(BR) G2SS

±10

—

—

V

I

G2 = ±10 A, VG1S = VDS = 0

voltage

Gate 1 cutoff current

IG1SS

—

—

±100

nA

VG1S = ±8 V, VG2S = VDS = 0

Gate 2 cutoff current

IG2SS

—

—

±100

nA

VG2S = ±8 V, VG1S = VDS = 0

Gate 1 to source cutoff voltage

VG1S(off)

+0.5

—

–0.8

V

V DS = 6

V, VG2S = 3V,

ID = 100 A

Gate 2 to source cutoff voltage

VG2S(off)

+0.5

—

–0.8

V

V DS = 6

V, VG1S = 3V,

ID = 100 A

Drain current

IDSS

0

—

4

mA

V DS = 6

V, VG2S = 3V, VG1S = 0

Forward transfer admittance

|yfs|

15

—

—

mS

V

DS = 6

V, VG2S = 3V,

ID = 10 mA, f = 1 kHz

Input capacitance

Ciss

—

1.7

2.2

pF

V DS = 6

V, VG2S = 3V,

ID = 10 mA, f = 1 MHz

Output capacitance

Coss

—

1.0

1.4

pF

Reverse transfer capacitance

Crss

—

0.017

0.03

pF

Power gain

PG

16

19

—

dB

V DS = 4 V, VG2S = 3V,

ID = 10 mA, f = 900 MHz

Noise figure

NF

—

3.0

4.5

dB

Note: Marking is “FI–”.

2