3SK186
Silicon N-Channel Dual Gate MOS FET
Application
UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
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4 |
1. |
Source |
2. |
Gate1 |
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3. |
Gate2 |
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4. |
Drain |
3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate 1 to source voltage |
VG1S |
±10 |
V |
Gate 2 to source voltage |
VG2S |
±10 |
V |
Drain current |
ID |
35 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
125 |
°C |
Storage temperature |
Tstg |
–55 to +125 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSX |
12 |
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— |
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— |
V |
V |
G1S = VG2S = –5 V, |
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voltage |
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ID = 200 A |
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Gate 1 to source breakdown |
V(BR)G1SS |
±10 |
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— |
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— |
V |
I |
G1 = ±10 A, VG2S = VDS = 0 |
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voltage |
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Gate 2 to source breakdown |
V(BR) G2SS |
±10 |
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— |
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— |
V |
I |
G2 = ±10 A, VG1S = VDS = 0 |
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voltage |
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Gate 1 cutoff current |
IG1SS |
— |
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— |
±100 |
nA |
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VG1S = ±8 V, VG2S = VDS = 0 |
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Gate 2 cutoff current |
IG2SS |
— |
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— |
±100 |
nA |
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VG2S = ±8 V, VG1S = VDS = 0 |
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Gate 1 to source cutoff voltage |
VG1S(off) |
+0.5 |
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— |
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–0.8 |
V |
V DS = 6 |
V, VG2S = 3V, |
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ID = 100 A |
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Gate 2 to source cutoff voltage |
VG2S(off) |
+0.5 |
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— |
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–0.8 |
V |
V DS = 6 |
V, VG1S = 3V, |
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ID = 100 A |
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Drain current |
IDSS |
0 |
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— |
4 |
mA |
V DS = 6 |
V, VG2S = 3V, VG1S = 0 |
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Forward transfer admittance |
|yfs| |
15 |
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— |
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mS |
V |
DS = 6 |
V, VG2S = 3V, |
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ID = 10 mA, f = 1 kHz |
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Input capacitance |
Ciss |
— |
1.7 |
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2.2 |
pF |
V DS = 6 |
V, VG2S = 3V, |
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ID = 10 mA, f = 1 MHz |
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Output capacitance |
Coss |
— |
1.0 |
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1.4 |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.017 |
0.03 |
pF |
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Power gain |
PG |
16 |
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19 |
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— |
dB |
V DS = 4 V, VG2S = 3V, |
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ID = 10 mA, f = 900 MHz |
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Noise figure |
NF |
— |
3.0 |
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4.5 |
dB |
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Note: Marking is “FI–”. |
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