HIT 2SK740 Datasheet
2SK740
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK740
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V *
Input capacitance Ciss — 1200 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 550 — pF f = 1 MHz
Reverse transfer capacitance Crss — 85 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
150 — — V ID = 10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 120 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 0.12 0.15 Ω ID = 5 A, VGS = 10 V *
— 20 — ns ID = 5 A, VGS = 10 V,
— 50 — ns RL = 6 Ω
—70—ns
—40—ns
— 1.2 — V IF = 10 A, VGS = 0
— 220 — ns IF = 10 A, VGS = 0,
150 V
±20 V
10 A
40 A
10 A
50 W
= ±100 µA, VDS = 0
G
/dt = 50 A/µs
di
F
1
1
2
2SK740
Power vs. Temperature Derating
60
40
20
Channel Dissipation Pch (W)
0
50 100 150
Case Temperature T
Typical Output Characteristics
20
(A)
D
15V
16
12
10 V
8 V
(°C)
C
Pulse Test
6 V
5.5 V
100
Maximum Safe Operation Area
10 µs
100 µs
PW = 10 ms (1 Shot)
(A)
D
10
DC Operation (T
1 ms
C
= 25°C)
1.0
Drain Current I
Operation in this area is
limited by R
0.1
1 10 1,000
DS (on)
Ta = 25°C
100
Drain to Source Voltage V
Typical Transfer Characteristics
20
–25°C
16
V
= 10 V
DS
Pulse Test
(A)
D
12
(V)
DS
75°C
TC = 25°C
8
Drain Current I
4
0
4 8 12 16 20
Drain to Source Voltage VDS (V)
V
GS
5 V
= 4.5 V
8
Drain Current I
4
0
246810
Gate to Source Voltage V
GS
(V)
3
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