HIT 2SK522 Datasheet
Silicon N-Channel Junction FET
Application
VHF amplifier, Mixer, local oscillator
Outline
SPAK
2SK522
1
2
3
1. Gate
2. Source
3. Drain
2SK522
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain voltage V
Gate current I
Drain current I
GDO
G
D
Channel power dissipation Pch 200 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
V
(BR)GDO
voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance
GSS
DSS
GS(off)
y
fs
Input capacitance Ciss — 6.8 — pF VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 0.1 — pF
Power gain PG 20 27 — dB VDS = 5 V, VGS = 0,
Noise figure NF — 1.7 2.5 dB
Note: 1. The 2SK522 is grouped by I
Drain D E F
I
DSS
4 to 8 6 to 10 10 to 20
–30 — — V IG = –100 µA, IS = 0
— — –10 nA VGS = –0.5 V, VDS = 0
1
*
4 — 20 mA V
——–3V VDS = 5 V, ID = 10 µA
8 10 — mS V
as follows.
DSS
–30 V
10 mA
20 mA
= 5 V, VGS = 0
DS
= 5 V, VGS = 0, f = 1 kHz
DS
f = 100 MHz
2
2SK522
Maximum Channel Power
Dissipation Curve
300
200
100
Channel Power Dissipation Pch (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
10
VGS = 0
8
(mA)
D
6
–0.2 V
–0.4
4
–0.6
Drain Current I
2
–0.8
–1.0
Typical Output Characteristics (1)
10
= 0
V
8
(mA)
D
6
GS
–0.2 V
P
ch
= 200 mW
–0.4
4
–0.6
Drain Current I
2
–0.8
–1.0
0 1020304050
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
15
VDS = 5 V
10
(mA)
D
F
E
5
Drain Current I
D
0 12345
Drain to Source Voltage V
DS
(V)
0
–3.0 –2.0 –1.0 0
Gate to Source Voltage V
GS
(V)
3
Loading...