HIT 2SK494 Datasheet
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
SPAK
2SK494
1
2
3
1. Drain
2. Gate
3. Source
2SK494
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Gate current I
DS
GSO
D
G
Channel power dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to source breakdown
V
(BR)GSS
voltage
Gate cutoff current I
Gate to source cutoff voltage V
Drain current I
Forward transfer admittance
GSS
GS(off)
DSS
y
fs
Input capacitance Ciss — 9.0 11.0 pF VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 2.8 4.0 pF VDS = 5 V, VGS = 0, f = 1 MHz
Noise figure NF — 0.5 3.0 dB VDS = 5 V, ID = 1 mA,
Note: 1. The 2SK494 is grouped by I
Grade B C D E
I
DSS
6 to 14 12 to 22 18 to 30 26 to 40
–22 — — V IG = –10 µA, VDS = 0
— — –10 nA VGS = –15 V, VDS = 0
— — –2.5 V VDS = 5 V, ID = 10 µA
1
*
6 — 40 mA V
20 — — mS V
as follows.
DSS
22 V
–22 V
100 mA
10 mA
= 5 V, VGS = 0, Pulse test
DS
= 5 V, ID = 10 mA,
DS
f = 1 kHz
f = 1 kHz, Rg = 1 kΩ
See character curves 2SK435.
2
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