HIT 2SK435 Datasheet

Silicon N-Channel Junction FET

Application

Low frequency / High frequency amplifier

Outline

TO-92 (2)

2SK435

1. Drain

2. Source

3. Gate

3

2

1

2SK435

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Gate current I

DS

GSO

D

G

Channel power dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to source breakdown

V

(BR)GSS

voltage
Gate cutoff current I
Gate to source cutoff voltage V
Drain current I
Forward transfer admittance

GSS

GS(off)

DSS

y

fs

Input capacitance Ciss — 9.0 11.0 pF VDS = 5 V, VGS = 0,

Reverse transfer capacitance Crss — 2.8 4.0 pF VDS = 5 V, VGS = 0,

Noise figure NF — 0.5 3.0 dB VDS = 5 V, ID = 1 mA,

Note: 1. The 2SK435 is grouped by I

Grade B C D E

I

DSS

6 to 14 12 to 22 18 to 30 26 to 40

–22 — — V IG = –10 µA, VDS = 0

— — –10 nA VGS = –15 V, VDS = 0
— — –2.5 V VDS = 5 V, ID = 10 µA

1

*

6 — 40 mA V
20 — — mS V

as follows.

DSS

22 V
–22 V
100 mA
10 mA

= 5 V, VGS = 0, Pulse test

DS

= 5 V, ID = 10 mA,

DS

f = 1kHz

f = 1MHz

f = 1MHz

f = 1kHz, Rg = 1kΩ

2

2SK435

Maximum Channel Dissipation Curve

400

(mW)

ch

300

200

100

Channel Power Dissipation P

0 50 100 200150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

20

VDS = 5 V

16

(mA)

D

12

Typical Output Characteristics

20

16

(mA)

D

12

8

Drain Current I

4

02 68104

Drain to Source Voltage V

Forward Transfer Admittance

vs. Drain Current

100

VDS = 5 V
f = 1 kHz

10

= 0V

V

GS

–0.1
–0.2

–0.3
–0.4

–0.5

–0.6

(V)

DS

8

Drain Current I

4

0

–1.25 –1.0 –0.5 –0.25 0–0.75

Gate to Source Voltage V

GS

(V)

 (mS)

fs

y

1.0

Forward Transfer Admittance

0.1

0.1 1.0 10 100
Drain Current I

D

(mA)

3