Telefunken TCED4100G, TCED4100, TCED2100G, TCED2100, TCED1100G Datasheet

TCED1100(G) up to TCED4100

Vishay Telefunken

Optocoupler with Photodarlington Output

Description

The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II

(reinforced isolation):

14925

DFor appl. class I ± IV at mains voltage ≤ 300 V

DFor appl. class I ± III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

VDE Standards

These couplers perform safety functions according to the following equipment standards:

DVDE 0884

Optocoupler for electrical safety requirements

DIEC 950/EN 60950

Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS)

DVDE 0804

Telecommunication apparatus and data processing

DIEC 65

Safety for mains-operated electronic and related household apparatus

Order Instruction

Coll. Emitter

Anode Cath.

4 PIN

8 PIN

16 PIN

14580

C

Ordering Code	CTR Ranking	Remarks
TCED1100/ TCED1100G1)	600%	4 Pin = Single channel
TCED2100	600%	8 Pin = Dual channel
TCED4100	600%	16 Pin = Quad channel

1) G = Leadform 10.16 mm; G is not market on the body

234	Rev. A3, 11±Jan±99

TCED1100(G) up to TCED4100

Vishay Telefunken

Features

Approvals:

DBSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

DFIMKO (SETI): EN 60950, Certificate number 11992

DUnderwriters Laboratory (UL) 1577 recognized, file number E-76222 ± Double Protection

DCSA (C±UL) 1577 recognized,

file number E-76222 ± Double Protection

DVDE 0884, Certificate number 115667

VDE 0884 related features:

DRated impulse voltage (transient overvoltage) VIOTM = 8 kV peak

DIsolation test voltage

(partial discharge test voltage) Vpd = 1.6 kV

DRated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

DRated recurring peak voltage (repetitive)

VIORM = 600 VRMS

Absolute Maximum Ratings

Input (Emitter)

DCreepage current resistance according to

VDE 0303/IEC 112

Comparative Tracking Index: CTI ≥ 175

DThickness through insulation ≥ 0.75 mm

DInternal creepage distance > 4 mm

General features:

DIsolation materials according to UL94-VO

DPollution degree 2 (DIN/VDE 0110 / resp. IEC 664)

DClimatic classification 55/100/21 (IEC 68 part 1)

DSpecial construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

DLow temperature coefficient of CTR

DG = Leadform 10.16 mm;

provides creepage distance > 8 mm, for TCED2100/ TCED4100 optional;

suffix letter `G' is not marked on the optocoupler

DCoupling System U

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp ≤ 10 ms	IFSM	1.5	A
Power dissipation	Tamb ≤ 25°C	PV	100	mW
Junction temperature		Tj	125	°C
Output (Detector)
Parameter	Test Conditions	Symbol	Value	Unit
Collector emitter voltage		VCEO	35	V
Emitter collector voltage		VECO	7	V
Collector current		IC	80	mA
Collector peak current	tp/T = 0.5, tp ≤ 10 ms	ICM	100	mA
Power dissipation	Tamb ≤ 25°C	PV	150	mW
Junction temperature		Tj	125	°C
Coupler
Parameter	Test Conditions	Symbol	Value	Unit
AC isolation test voltage (RMS)	t = 1 min	VIO	5	kV
Total power dissipation	Tamb ≤ 25°C	Ptot	250	mW
Operating ambient temperature range		Tamb	±40 to +100	°C
Storage temperature range		Tstg	±55 to +125	°C
Soldering temperature	2 mm from case t ≤ 10 s	Tsd	260	°C

Rev. A3, 11±Jan±99

235

TCED1100(G) up to TCED4100

Vishay Telefunken

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = 20 mA	VF		1.15	1.4	V
Junction capacitance	VR = 0 V, f = 1 MHz	Cj		50		pF

Output (Detector)

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Collector emitter voltage	IC = 1 mA	VCEO	32			V
Emitter collector voltage	IE = 100 mA	VECO	7			V
Collector emitter cut-off	VCE = 10 V, If = 0, E = 0	ICEO		15	100	nA
current

Coupler

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Collector emitter	IF = 20 mA, IC = 5 mA	VCEsat			1	V
saturation voltage
Cut-off frequency	VCE = 5 V, IF = 10 mA,	fc		10		kHz
	RL = 100 W
Coupling capacitance	f = 1 MHz	Ck		0.3		pF

Current Transfer Ratio (CTR)

Parameter	Test Conditions	Type	Symbol	Min.	Typ.	Max.	Unit
IC/IF	VCE = 2 V, IF = 1 mA	TCED1100(G)/	CTR	6.0	8.0
		TCED2100/
		TCED4100

236	Rev. A3, 11±Jan±99