Telefunken TCET4100G, TCET4100, TCET2100G, TCET2100, TCET1109G Datasheet

TCET110.(G) up to TCET4100

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

DFor appl. class I ± IV at mains voltage ≤ 300 V

DFor appl. class I ± III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

VDE Standards

These couplers perform safety functions according to the following equipment standards:

DVDE 0884

Optocoupler for electrical safety requirements

DIEC 950/EN 60950

Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS)

DVDE 0804

Telecommunication apparatus and data processing

DIEC 65

Safety for mains-operated electronic and related household apparatus

14925

Coll. Emitter

13929

Anode Cath.

4 PIN

8 PIN

16 PIN

C

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TCET110.(G) up to TCET4100

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Order Instruction

Ordering Code	CTR Ranking	Remarks
TCET1100/ TCET1100G1)	50 to 600%	4 Pin = Single channel
TCET1101/ TCET1101G1)	40 to 80%	4 Pin = Single channel
TCET1102/ TCET1102G1)	63 to 125%	4 Pin = Single channel
TCET1103/ TCET1103G1)	100 to 200%	4 Pin = Single channel
TCET1104/ TCET1104G1)	160 to 320%	4 Pin = Single channel
TCET1105/ TCET1105G1)	50 to 150%	4 Pin = Single channel
TCET1106/ TCET1106G1)	100 to 300%	4 Pin = Single channel
TCET1107/ TCET1107G1)	80 to 160%	4 Pin = Single channel
TCET1108/ TCET1108G1)	130 to 260%	4 Pin = Single channel
TCET1109/ TCET1109G1)	200 to 400%	4 Pin = Single channel
TCET2100	50 to 600%	8 Pin = Dual channel
TCET4100	50 to 600%	16 Pin = Quad channel

1) G = Leadform 10.16 mm; G is not marked on the body

Features

Approvals:

DBSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

DFIMKO (SETI): EN 60950, Certificate number 11027

DUnderwriters Laboratory (UL) 1577 recognized, file number E-76222 ± Double Protection

DCSA (C-UL) 1577 recognized

file number E- 76222 - Double Protection

DVDE 0884, Certificate number 115667

VDE 0884 related features:

DRated impulse voltage (transient overvoltage) VIOTM = 8 kV peak

DIsolation test voltage

(partial discharge test voltage) Vpd = 1.6 kV

DRated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

DRated recurring peak voltage (repetitive)

VIORM = 600 VRMS

DCreepage current resistance according

to VDE 0303/IEC 112

Comparative Tracking Index: CTI ≥ 175

DThickness through insulation ≥ 0.75 mm

DInternal creepage distance > 4 mm

General features:

DCTR offered in 9 groups

DIsolation materials according to UL94-VO

DPollution degree 2

(DIN/VDE 0110 / resp. IEC 664)

DClimatic classification 55/100/21 (IEC 68 part 1)

DSpecial construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

DLow temperature coefficient of CTR

DG = Leadform 10.16 mm;

provides creepage distance > 8 mm, for TCET2100/ TCET4100 optional;

suffix letter `G' is not marked on the optocoupler

DCoupling System U

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TCET110.(G) up to TCET4100

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Absolute Maximum Ratings

Input (Emitter)

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp ≤ 10 ms	IFSM	1.5	A
Power dissipation	Tamb ≤ 25°C	PV	100	mW
Junction temperature		Tj	125	°C

Output (Detector)

Parameter	Test Conditions	Symbol	Value	Unit
Collector emitter voltage		VCEO	70	V
Emitter collector voltage		VECO	7	V
Collector current		IC	50	mA
Collector peak current	tp/T = 0.5, tp ≤ 10 ms	ICM	100	mA
Power dissipation	Tamb ≤ 25°C	PV	150	mW
Junction temperature		Tj	125	°C

Coupler

Parameter	Test Conditions	Symbol	Value	Unit
Isolation test voltage (RMS)	t = 1 min	VIO	5	kV
Total power dissipation	Tamb ≤ 25°C	Ptot	250	mW
Operating ambient temperature		Tamb	±40 to +100	°C
range
Storage temperature range		Tstg	±55 to +125	°C
Soldering temperature	2 mm from case t ≤ 10 s	Tsd	260	°C

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TCET110.(G) up to TCET4100

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Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = ± 50 mA	VF		1.25	1.6	V
Junction capacitance	VR = 0 V, f = 1 MHz	Cj		50		pF

Output (Detector)

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Collector emitter voltage	IC = 1 mA	VCEO	70			V
Emitter collector voltage	IE = 100 mA	VECO	7			V
Collector emitter cut-off	VCE = 20 V, If = 0, E = 0	ICEO		10	100	nA
current

Coupler

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Collector emitter	IF = 10 mA, IC = 1 mA	VCEsat			0.3	V
saturation voltage
Cut-off frequency	VCE = 5 V, IF = 10 mA,	fc		110		kHz
	RL = 100 W
Coupling capacitance	f = 1 MHz	Ck		0.3		pF

Current Transfer Ratio (CTR)

Parameter	Test Conditions		Type	Symbol	Min.	Typ.	Max.	Unit
IC/IF	VCE = 5	V, IF = 5 mA	TCET1100(G)/	CTR	0.50		6.0
			TCET2100/
			TCET4100
IC/IF	VCE = 5	V, IF = 10 mA	TCET1101(G)	CTR	0.40		0.8
			TCET1102(G)	CTR	0.63		1.25
			TCET1103(G)	CTR	1.0		2.0
			TCET1104(G)	CTR	1.6		3.2
IC/IF	VCE = 5	V, IF = 1 mA	TCET1101(G)	CTR	0.13	0.30
			TCET1102(G)	CTR	0.22	0.45
			TCET1103(G)	CTR	0.34	0.70
			TCET1104(G)	CTR	0.56	0.90
IC/IF	VCE = 5	V, IF = 5 mA	TCET1105(G)	CTR	0.5		1.5
			TCET1106(G)	CTR	1.0		3.0
			TCET1107(G)	CTR	0.8		1.6
			TCET1108(G)	CTR	1.3		2.6
			TCET1109(G)	CTR	2.0		4.0

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