FEATURES
•Current Transfer Ratio
MCT5210, >70% at IF=3.0 mA MCT5211, >110% at IF=1.0 mA
•Saturation CTR–MCT5211, >100% at IF=1.6 mA
•High Isolation Voltage, 5300 VACRMS
•Underwriters Lab File #E52744
•VDE #0884 Available with Option 1
DESCRIPTION
The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VACRMS.
Because these parts have guaranteed CTRs at one and three mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection.
Maximum Ratings |
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|
Emitter |
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|
Peak Reverse Voltage ............................................ |
6 V |
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Continuous Forward Current ............................. |
40 mA |
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Power Dissipation at 25°C................................. |
75 mW |
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Derate Linearly from 25°C .......................... |
1.0 mW/°C |
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Detector |
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Collector-Emitter Breakdown Voltage.................... |
30 V |
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Emitter-Collector Breakdown Voltage...................... |
7 V |
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Collector-Base Breakdown Voltage....................... |
70 V |
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Power Dissipation............................................ |
200 mW |
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Derate Linearly from 25°C .......................... |
2.6 mW/°C |
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Package |
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Isolation Test Voltage.............................. |
5300 VACRMS |
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Total Package Dissipation |
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at 25°C Ambient (LED + Detector) .............. |
260 mW |
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Derate Linearly from 25°C .......................... |
3.5 mW/°C |
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Leakage Path ............................................. |
7 mm min. |
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Clearance Path............................................ |
7 mm min. |
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Comparative Tracking Index per |
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|
DIN IEC 112/VDE 0303, part 1 ........................... |
175 |
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Isolation Resistance |
≥1012 Ω |
|
V |
=500 V, T =25°C .................................... |
|
IO |
A |
≥1011 Ω |
V |
=500 V, T =100°C .................................. |
|
IO |
A |
–55°C to +100°C |
Operating Temperature ..................... |
||
Storage Temperature......................... |
–55°C to +150°C |
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MCT5210
MCT5211
AlGaAs LED/ Phototransistor
Optocoupler
Dimensions in inches (mm)
pin one ID
3 |
2 |
1 |
.248 (6.30) |
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|
.256 (6.50) |
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|
4 |
5 |
6 |
.335 (8.50) |
||
.343 (8.70) |
||
Anode 1
Cathode 2
NC 3
6 |
Base |
5 |
Collector |
4 |
Emitter |
.039 |
.048 (1.22) |
|
.300 (7.62) |
|
typ. |
||
(1.00) |
.052 (1.32) |
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|
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||
min. |
.130 (3.30) |
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.138 (3.50) |
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4° |
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|
18° |
typ. |
.031 (.080) min. |
|
.114 (2.90) |
|
3°–9° |
.130 (3.30) |
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|
|
.010 (.25) |
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|
.031 (.80) |
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|
.018 (0.45) |
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typ. |
|
.035 (.90) |
|
.300–.347 |
|
.022 (0.55) |
|
||
.100 (2.54) typ. |
|
||
|
|
(7.62–8.81) |
Electrical Characteristics (25°C)
Parameter |
|
Symbol |
Min. |
|
Typ. |
Max. |
Unit |
Condition |
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Emitter |
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Forward Voltage |
|
VF |
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|
1.2 |
1.5 |
V |
IF=5 mA |
Reverse Voltage |
|
VR |
6 |
|
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|
V |
IR=10 A |
Detector |
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HFE |
100 |
|
200 |
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VCE=5 V |
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IC=100 A |
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BVCEO |
30 |
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|
V |
IC=100 A |
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BVECO |
7 |
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V |
IE=100 A |
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BVCBO |
70 |
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|
V |
IE=10 A |
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ICEO |
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|
5 |
100 |
nA |
VCE=10 V |
Package (0–70°C) |
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||||
Saturated Current Transfer Ratio |
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VCE=0.4 V |
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MCT5210 |
|
CTRCEsat |
60 |
|
120 |
|
% |
IF=3.0 mA |
MCT5211 |
|
CTRCEsat |
100 |
|
200 |
|
% |
IF=1.6 mA |
MCT5211 |
|
CTRCEsat |
75 |
|
150 |
|
% |
IF=1.0 mA |
Current Transfer Ratio |
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VCE=5.0 V |
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MCT5210 |
|
CTR |
70 |
|
150 |
|
% |
IF=3.0 mA |
MCT5211 |
|
CTR |
150 |
|
300 |
|
% |
IF=1.6 mA |
MCT5211 |
|
CTR |
110 |
|
225 |
|
% |
IF=1.0 mA |
Collector-Base Current Transfer Ratio |
|
|
|
VCE=4.3 V |
||||
MCT5210 |
|
CTRCB |
0.2 |
|
0.4 |
|
% |
IF=3.0 mA |
MCT5211 |
|
CTRCB |
0.3 |
|
0.6 |
|
% |
IF=1.6 mA |
MCT5211 |
|
CTRCB |
0.25 |
|
0.5 |
|
% |
IF=1.0 mA |
Saturation Voltage |
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MCT5210 |
|
VCEsat |
|
|
0.25 |
0.4 |
V |
IF=3.0 mA |
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|
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|
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|
IC=1.8 mA |
MCT5211 |
|
VCEsat |
|
|
0.25 |
0.4 |
V |
IF=1.6 mA |
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IC=1.6 mA |
1
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