Array LED |
LR Z18 x, LY Z181, LG Z18 x |
2 mm LED, Diffused |
|
Besondere Merkmale
●eingefärbtes, diffuses Gehäuse
●als optischer Indikator einsetzbar
●als Mehrfachzeile verfügbar
●Störimpulsfest nach DIN 40839
Features
●colored, diffused package
●for use as optical indicator
●available as multiple array (LED)
●load dump resistant acc. to DIN 40839
VEX06726
Typ |
Anzahl der |
Emissionsfarbe |
Gehäusefarbe |
Lichtstärke |
Bestellnummer |
Type |
Lichtpunkte |
Color of |
Color of |
Luminous |
Ordering Code |
|
Number of |
Emission |
Package |
Intensity |
|
|
Dots |
|
|
IF = 10 mA |
|
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IV (mcd) |
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LR Z181-CO |
1 |
red |
red diffused |
³ 0.25 |
Q62703-Q1495 |
LR Z182-CO |
2 |
red |
red diffused |
³ 0.25 |
Q62703-Q1496 |
LR Z183-CO |
3 |
red |
red diffused |
³ 0.25 |
Q62703-Q1497 |
LR Z184-CO |
4 |
red |
red diffused |
³ 0.25 |
Q62703-Q1498 |
LR Z185-CO |
5 |
red |
red diffused |
³ 0.25 |
Q62703-Q1499 |
LR Z186-CO |
6 |
red |
red diffused |
³ 0.25 |
Q62703-Q1500 |
LR Z187-CO |
7 |
red |
red diffused |
³ 0.25 |
Q62703-Q1501 |
LR Z188-CO |
8 |
red |
red diffused |
³ 0.25 |
Q62703-Q1502 |
LR Z189-CO |
9 |
red |
red diffused |
³ 0.25 |
Q62703-Q1503 |
LR Z180-CO |
10 |
red |
red diffused |
³ 0.25 |
Q62703-Q1504 |
|
|
|
|
|
|
LY Z181-CO |
1 |
yellow |
yellow diffused |
³ 0.25 |
Q62703-Q1505 |
|
|
|
|
|
|
LG Z181-CO |
1 |
green |
green diffused |
³ 0.25 |
Q62703-Q1506 |
LG Z182-CO |
2 |
green |
green diffused |
³ 0.25 |
Q62703-Q1507 |
LG Z183-CO |
3 |
green |
green diffused |
³ 0.25 |
Q62703-Q1508 |
LG Z184-CO |
4 |
green |
green diffused |
³ 0.25 |
Q62703-Q1509 |
LG Z185-CO |
5 |
green |
green diffused |
³ 0.25 |
Q62703-Q1510 |
LG Z186-CO |
6 |
green |
green diffused |
³ 0.25 |
Q62703-Q1511 |
LG Z188-CO |
8 |
green |
green diffused |
³ 0.25 |
Q62703-Q1513 |
LG Z180-CO |
10 |
green |
green diffused |
³ 0.25 |
Q62703-Q1515 |
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Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min £ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min £ 2.0.
Semiconductor Group |
1 |
11.96 |
LR Z18 x, LY Z181, LG Z18 x
Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Werte |
Einheit |
|
Parameter |
Symbol |
Values |
Unit |
|
|
|
|
|
|
Betriebstemperatur |
Top |
– 40 … + 80 |
˚C |
|
Operating temperature range |
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Lagertemperatur |
Tstg |
– 40 … + 80 |
˚C |
|
Storage temperature range |
|
|
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|
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|
|
Sperrschichttemperatur |
Tj |
+ 100 |
˚C |
|
Junction temperature |
|
|
|
|
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|
|
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Durchlaßstrom |
IF |
30 |
mA |
|
Forward current |
|
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Stoßstrom |
IFM |
0.5 |
A |
|
Surge current |
|
|
|
|
t ≤ 10 μs, D = 0.005 |
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|
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Sperrspannung |
VR |
5 |
V |
|
Reverse voltage |
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Verlustleistung |
Ptot |
80 |
mW |
|
Power dissipation |
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TA ≤ 25 ˚C |
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Wärmewiderstand |
Rth JA |
7501) |
K/W |
|
Thermal resistance |
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Sperrschicht / Luft |
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Junction / air |
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|
1) |
Auf Platine gelötet: Lötfläche ³ 16 cm2. |
|
|
|
1) |
Soldered on PC board: pad size ³ 16 cm2. |
|
|
|
Semiconductor Group |
2 |
LR Z18 x, LY Z181, LG Z18 x
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung |
|
Symbol |
|
Werte |
|
Einheit |
Parameter |
|
Symbol |
|
Values |
|
Unit |
|
|
|
|
|
|
|
|
|
|
LR |
LY |
LG |
|
|
|
|
|
|
|
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Wellenlänge des emittierten Lichtes |
(typ.) |
λpeak |
660 |
586 |
565 |
nm |
Wavelength at peak emission |
(typ.) |
|
|
|
|
|
IF = 20 mA |
|
|
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|
|
|
|
|
Dominantwellenlänge |
(typ.) |
λdom |
645 |
590 |
570 |
nm |
Dominant wavelength |
(typ.) |
|
|
|
|
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IF = 20 mA |
|
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Spektrale Bandbreite bei 50 % Irel max |
(typ.) |
Δλ |
35 |
45 |
25 |
nm |
Spectral bandwidth at 50 % Irel max |
(typ.) |
|
|
|
|
|
IF = 20 mA |
|
|
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Abstrahlwinkel bei 50 % IV (Vollwinkel) |
2ϕ |
100 |
100 |
100 |
Grad |
|
Viewing angle at 50 % IV |
|
|
|
|
|
deg. |
|
|
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Durchlaßspannung |
(typ.) |
VF |
1.6 |
2.0 |
2.0 |
V |
Forward voltage |
(max.) |
VF |
2.0 |
2.6 |
2.6 |
V |
IF = 10 mA |
|
|
|
|
|
|
Sperrstrom |
(typ.) |
IR |
0.01 |
0.01 |
0.01 |
μA |
Reverse current |
(max.) |
IR |
10 |
10 |
10 |
μA |
VR = 5 V |
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Kapazität |
(typ.) |
C0 |
25 |
10 |
15 |
pF |
Capacitance |
|
|
|
|
|
|
VR = 0 V, f = 1 MHz |
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Schaltzeiten: |
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Switching times: |
|
|
|
|
|
|
IV from 10 % to 90 % |
(typ.) |
tr |
120 |
300 |
450 |
ns |
IV from 90 % to 10 % |
(typ.) |
tf |
50 |
150 |
200 |
ns |
IF = 100 mA, tP = 10 μs, RL = 50 Ω |
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Semiconductor Group |
3 |