LC SOT-23 LED, Diffused |
LS S269, LY S269, LG S269 |
Low Current LED |
|
Besondere Merkmale
●eingefärbtes, diffuses Gehäuse
●extrem weitwinklig
●als optischer Indikator einsetzbar
●hohe Lichtstärke bei kleinen Strömen (typ. 2 mA)
●für alle SMT-Bestück- und Löttechniken geeignet
●gegurtet (8-mm-Filmgurt)
Features
●colored, diffused package
●extrem wide-angle LED
●for use as optical indicator
●high luminous intensity at very low currents (typ. 2 mA)
●suitable for all SMT assembly and soldering methods
●available taped on reel (8 mm tape)
VSO06723
Typ |
Emissionsfarbe |
Gehäusefarbe |
Lichtstärke |
Bestellnummer |
Type |
Color of |
Color of |
Luminous |
Ordering Code |
|
Emission |
Package |
Intensity |
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IF = 2 mA |
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IV (mcd) |
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LS S269-BO |
super-red |
red diffused |
≥ 0.16 |
Q62703-Q1566 |
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LY S269-BO |
yellow |
yellow diffused |
≥ 0.16 |
Q62703-Q1568 |
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LG S269-BO |
green |
green diffused |
≥ 0.16 |
Q62703-Q1570 |
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Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group |
1 |
1998-04-07 |
LS S269, LY S269, LG S269
Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Werte |
Einheit |
|
Parameter |
Symbol |
Values |
Unit |
|
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|
|
|
Betriebstemperatur |
Top |
– 55 … + 100 |
˚C |
|
Operating temperature range |
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Lagertemperatur |
Tstg |
– 55 … + 100 |
˚C |
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Storage temperature range |
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Sperrschichttemperatur |
Tj |
+ 100 |
˚C |
|
Junction temperature |
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Durchlaßstrom |
IF |
7.5 |
mA |
|
Forward current |
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Stoßstrom |
IFM |
150 |
mA |
|
Surge current |
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t ≤ 10 s, D = 0.005 |
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Sperrspannung |
VR |
5 |
V |
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Reverse voltage |
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Verlustleistung |
Ptot |
20 |
mW |
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Power dissipation |
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TA ≤ 25 ˚C |
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Wärmewiderstand |
Rth JA |
750 |
K/W |
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Thermal resistance |
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Sperrschicht / Luft |
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Junction / air 1) |
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1) |
Auf Platine gelötet: Lötfläche ≥ 16 cm2 |
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1) |
Soldered on PC board: pad size ≥ 16 cm2 |
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|
Semiconductor Group |
2 |
1998-04-07 |
LS S269, LY S269, LG S269
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung |
|
Symbol |
|
Werte |
|
Einheit |
Parameter |
|
Symbol |
|
Values |
|
Unit |
|
|
|
|
|
|
|
|
|
|
LS |
LY |
LG |
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Wellenlänge des emittierten Lichtes |
(typ.) |
λpeak |
635 |
586 |
565 |
nm |
Wavelength at peak emission |
(typ.) |
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IF = 7.5 mA |
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Dominantwellenlänge |
(typ.) |
λdom |
628 |
590 |
570 |
nm |
Dominant wavelength |
(typ.) |
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IF = 7.5 mA |
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Spektrale Bandbreite bei 50 % Irel max (typ.) |
Δλ |
45 |
45 |
25 |
nm |
|
Spectral bandwidth at 50 % Irel max |
(typ.) |
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IF = 7.5 mA |
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Abstrahlwinkel bei 50 % IV (Vollwinkel) |
2ϕ |
140 |
140 |
140 |
Grad |
|
Viewing angle at 50 % IV |
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deg. |
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Durchlaßspannung |
(typ.) |
VF |
1.8 |
2.0 |
1.9 |
V |
Forward voltage |
(max.) |
VF |
2.6 |
2.7 |
2.6 |
V |
IF = 2 mA |
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Sperrstrom |
(typ.) |
IR |
0.01 |
0.01 |
0.01 |
µA |
Reverse current |
(max.) |
IR |
10 |
10 |
10 |
µA |
VR = 5 V |
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Kapazität |
(typ.) |
C0 |
3 |
3 |
12 |
pF |
Capacitance |
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VR = 0 V, ƒ = 1 MHz |
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Schaltzeiten: |
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Switching times: |
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|
|
IV from 10 % to 90 % |
(typ.) |
tr |
200 |
200 |
450 |
ns |
IV from 90 % to 10 % |
(typ.) |
tf |
150 |
150 |
200 |
ns |
IF = 100 mA, tP = 10 µs, RL = 50 Ω |
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Semiconductor Group |
3 |
1998-04-07 |
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