ROHM EMB2, IMB2A, UMB2N Schematic [ru]

EMB2 / UMB2N / IMB2A

Transistors

General purpose
(dual digital transistors)

EMB2 / UMB2N / IMB2A

zFeatures

1) Two DT A144E chips in a EMT or UMT or SMT
package.

2) Same size as EMT3 or UMT3 or SMT3 package, so
same mounting machine can be used for both.

3) Transistor elements are independent, eliminating
interference.

zStructure

Epitaxial planar type
PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both DTr
DTr

2.

1 and

zEquivalent circuit

EMB2 / UMB2N IMB2A

(3) (2) (1)

R

1

R

2

DTr

1

2

R

1

R
R

1

=47kΩ

2

=47kΩ

DTr

2

R

(4) (5) (6)

DTr

2

(4) (5) (6)

R

1

R

2

DTr

R

2

R

1

(3) (2) (1)

1

1

=47kΩ

R
R2=47kΩ

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol Limits

Supply voltage

Input voltage

Output current

Power
dissipation

EMB2, UMB2N

IMB2A

I

C (Max.)

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

V

CC

V

IN

I

O

150 (TOTAL)

Pd

300 (TOTAL)

Tj 150

Tstg

−55 to +150

−50

−40

10

−30

−100

Unit

V

V

mA

mW

˚C
˚C

Rev.A 1/2

zExternal dimensions (Unit : mm)

EMB2

0.22

0.13

ROHM : EMT6

Abbreviated symbol : B2

UMB2N

0.2

0.15

0.1Min.

ROHM : UMT6
EIAJ : SC-88

Abbreviated symbol : B2

IMB2A

0.3

0.15

0.3to0.6

ROHM : SMT6
EIAJ : SC-74

Abbreviated symbol : B2

1

∗

2

∗

(3)

(4)

(6)

0.5

1.0

(2)(5)

0.5

(1)

1.2

1.6

0.5

Each lead has same dimensions

)

)

3

4

(

(

)

5

(

)

6

(
)

5

(
)

4

(

)

2

(

)

)

6

1

(

(

1.25

2.1

0to0.1

Each lead has same dimensions

)

1

(

0.95

)

2

(

0.95

)

3

(

1.6

2.8

0.8

0to0.1

Each lead has same dimensions

1.6

0.65

0.65

0.7

1.3

2.0

0.9

2.9

1.9

1.1

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

Input voltage

Output voltage

V
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

R2 / R

zPackaging specifications

Package
Code TN T110

Type

Basic ordering
unit (pieces)

EMB2
UMB2N
IMB2A

zElectrical characteristic curves

−100

−50

−20

(V)

I (on)

−10

Ta=−40˚C

−5

25˚C

100˚C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

Fig.1 Input voltage vs. output current

−1

−500m

(V)

−200m

O (on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

O

(ON characteristics)

Ta=100˚C

25˚C

−40˚C

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

O

Fig.4 Output voltage vs. output

current

I (off)

V
V

I (on)

O (on)

I

I

I

O (off)

G

I

f

T

R

1

VO=−0.3V

(A)

lO/lI =20

(A)

Min.

−

−3

−

−

−

68

−

32.9

0.8

1

T2R

8000

−0.5

−0.3

0.18

−

−0.5

61.1

1.2

Unit

V

−

V

mA

µA

−

−

MHz

−

kΩ

−

Typ. Max.

−

−

−0.1

−

−

−

250

47

1

Taping

3000

−10m

−5m

−2m

(A)

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : Io

−5µ

−2µ

−1µ

3000

VCC=−5V

Ta=100˚C

25˚C

−40˚C

−0.5 −1 −1.5 −2 −2.5

0 −3

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

CC

=

−5V, I

V

O

=

−0.3V, I

V
IO/I

I

=

−10mA/−0.5mA

I

=

−5V

V

CC

=

−50V, V

V
V

O

=

−5V, I

CE

=

−10V, I

V

I (off)

Conditions

O

=

−100µA

O

=

−2mA

I

=

0V

O

=

−5mA

E

=

5mA, f=100MH

(V)

EMB2 / UMB2N / IMB2A

Z

∗

−

−

1k

500

Ta=100˚C

200

25˚C

−40˚C

100

50

20

10

5

DC CURRENT GAIN : GI

2
1

−100µ−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : IO

Fig.3 DC current gain vs. output

current

VO=−5V

(A)

Rev.A 2/2