Linear Technology LT1056AMH, LT1056ACH, LT1056, LT1055MH, LT1055AMH Datasheet

LT1055/LT1056

Precision, High Speed,

JFET Input Operational Amplifiers

FEATURES

■	Guaranteed Offset Voltage	150μV Max
	–55°C to 125°C	500μV Max
■	Guaranteed Drift	4μV/°C Max
■	Guaranteed Bias Current
	70°C	150pA Max
	125°C	2.5nA Max
■	Guaranteed Slew Rate	12V/μs Min

APPLICATIOUS

■Precision, High Speed Instrumentation

■Logarithmic Amplifiers

■D/A Output Amplifiers

■Photodiode Amplifiers

■Voltage-to-Frequency Converters

■Frequency-to-Voltage Converters

■Fast, Precision Sample-and-Hold

DESCRIPTIOU

The LT1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance.

For the first time, 16V/μs slew rate and 6.5MHz gain-ban- width product are simultaneously achieved with offset voltage of typically 50μV, 1.2μV/°C drift, bias currents of 40pA at 70°C and 500pA at 125°C.

The 150μV maximum offset voltage specification is the best available on any JFET input operational amplifier.

The LT1055 and LT1056 are differentiated by their operating currents. The lower power dissipation LT1055 achieves lower bias and offset currents and offset voltage. The additional power dissipation of the LT1056 permits higher slew rate, bandwidth and faster settling time with a slight sacrifice in DC performance.

The voltage-to-frequency converter shown below is one of the many applications which utilize both the precision and high speed of the LT1055/LT1056.

For a JFET input op amp with 23V/μs guaranteed slew rate, refer to the LT1022 data sheet.

and LTC are registered trademarks and LT is a trademark of Linear Technology Corporation.

TYPICAL APPLICATIOU

0kHz to 10kHz Voltage-to-Frequency Converter

Distribution of Input Offset Voltage

4.7k

3M

(H Package)

15V

140 V

S

= ±15V

50% TO

±

60 V

0.001 (POLYSTYRENE)

120

TA = 25°C

634 UNITS TESTED

10kHZ

FROM THREE RUNS

TRIM

+

7

OUTPUT

UNITS

100

0.005%

0V TO 10V 5k

2

15V

1Hz TO 10kHz

INPUT

LT1056

6

1.5k

LINEARITY

OF

80

0.1µF

22k

3

–

4

NUMBER

60

–15V

40

33pF

LM329

2N3906

3.3M

20

= 1N4148	0.1µF
	0

*1% FILM

THE LOW OFFSET VOLTAGE OF LT1056

–400 –200

0

200

400

–15V

CONTRIBUTES ONLY 0.1Hz OF ERROR

INPUT OFFSET VOLTAGE ( V)

WHILE ITS HIGH SLEW RATE PERMITS

LT1055/56 TA02

10kHz OPERATION.

LT1055/56 TA01

1

LT1055/LT1056

ABSOLUTE WAXIWUW RATINGSU

Supply Voltage ......................................................	±20V
Differential Input Voltage .......................................	±40V
Input Voltage .........................................................	±20V
Output Short-Circuit Duration ..........................	Indefinite
Operating Temperature Range
LT1055AM/LT1055M/LT1056AM/	–55°C to 125°C
LT1056M .........................................
LT1055AC/LT1055C/LT1056AC/	0°C to 70°C
LT1056C................................................
Storage Temperature Range	– 65°C to 150°C
All Devices ......................................
Lead Temperature (Soldering, 10 sec)..................	300°C

PACKAGE/ORDER IUFORWATIOU

		TOP VIEW							ORDER PART
				NC
									NUMBER
BALANCE		1		8		7 V +
–IN	2						6 OUT		LT1055ACH	LT1056ACH
+IN		3				5 BALANCE			LT1055CH	LT1056CH
		4							LT1055AMH	LT1056AMH
				V –
		H PACKAGE							LT1055MH	LT1056MH
8-LEAD TO-5 METAL CAN
TJMAX = 150°C, θJA = 150°C/ W, θJC = 45°C/ W
		TOP VIEW
BAL								N/C
	1						8		LT1055CN8
–IN								V+
	2						7
+IN								OUT	LT1056CN8
	3						6
V –								BAL
	4						5
		N8 PACKAGE
	8-LEAD PLASTIC DIP
TJMAX = 100°C, θJA = 130°C/ W

Consult factory for Industrial grade parts.

ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, VCM = 0V unless otherwise noted.

								LT1055M/LT1056M
					LT1055AM/LT1056AM			LT1055CH/LT1056CH
					LT1055AC/LT1056AC			LT1055CN8/LT1056CN8
SYMBOL		PARAMETER	CONDITIONS		MIN	TYP	MAX	MIN	TYP	MAX	UNITS
VOS		Input Offset Voltage (Note1)	LT1055 H Package		—	50	150	—	70	400		mV
			LT1056 H Package		—	50	180	—	70	450		mV
			LT1055 N8 Package		—	—	—	—	120	700		mV
			LT1056 N8 Package		—	—	—	—	140	800		mV
IOS		Input Offset Current	Fully Warmed Up		—	2	10	—	2	20		pA
IB		Input Bias Current	Fully Warmed Up		—	±10	±50	—	±10	±50		pA
			VCM = 10V		—	30	130	—	30	150		pA
		Input Resistance:Differential			—	1012	—	—	1012	—			W
		Common Mode	VCM = – 11V to 8V		—	1012	—	—	1012	—			W
		Input Capacitance	VCM = 8V to 11V		—	1011	—	—	1011	—			W
					—	4	—	—	4	—			pF
en		Input Noise Voltage	0.1Hz to 10Hz	LT1055	—	1.8	—	—	2.0	—	mVP-P
				LT1056	—	2.5	—	—	2.8	—	mVP-P
		Input Noise Voltage Density	f0 = 10Hz (Note 2)		—	28	50	—	30	60	nV/Ö
													Hz
			f0 = 1kHz (Note 3)		—	14	20	—	15	22	nV/ÖHz
In		Input Noise Current Density	f0 = 10Hz, 1kHz (Note 4)		—	1.8	4	—	1.8	4	fA/Ö
												Hz
AVOL		Large-Signal Voltage Gain	V0 = ±10V	RL = 2k	150	400	—	120	400	—	V/mV
				RL = 1k	130	300	—	100	300	—	V/mV
		Input Voltage Range			±11	±12	—	±11	±12	—			V
CMRR		Common-Mode Rejection Ratio	VCM = ±11V		86	100	—	83	98	—		dB
PSRR		Power Supply Rejection Ratio	VS = ±10V to ±18V		90	106	—	88	104	—		dB
VOUT		Output Voltage Swing	RL = 2k		±12	±13.2	—	±12	±13.2	—			V
SR		Slew Rate		LT1055	10	13	—	7.5	12	—	V/ms
				LT1056	12	16	—	9.0	14	—	V/ms
GBW		Gain-Bandwidth Product	f = 1MHz	LT1055	—	5.0	—	—	4.5	—	MHz
				LT1056	—	6.5	—	—	5.5	—	MHz
IS		Supply Current		LT1055	—	2.8	4.0	—	2.8	4.0	mA
				LT1056	—	5.0	6.5	—	5.0	7.0	mA
		Offset Voltage Adjustment Range	RPOT = 100k		—	±5	—	—	±5	—	mV

2

LT1055/LT1056

ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C unless otherwise noted.

						LT1055AC		LT1055CH/LT1056CH
						LT1056AC		LT1055CN8/LT1056CN8
SYMBOL	PARAMETER	CONDITIONS			MIN	TYP	MAX	MIN	TYP	MAX	UNITS
VOS	Input Offset Voltage (Note1)	LT1055 H Package		●	—	100	330	—	140	750	μV
		LT1056 H Package		●	—	100	360	—	140	800	μV
		LT1055 N8 Package		●	—	—	—	—	250	1250	μV
		LT1056 N8 Package		●	—	—	—	—	280	1350	μV
	Average Temperature	H Package (Note 5)		●	—	1.2	4.0	—	1.6	8.0	μV/°C
	Coefficient of Input Offset	N8 Package (Note 5)		●	—	—	—	—	3.0	12.0	μV/°C
	Voltage
IOS	Input Offset Current	Warmed Up	LT1055	●	—	10	50	—	16	80	pA
		TA = 70°C	LT1056	●	—	14	70	—	18	100	pA
IB	Input Bias Current	Warmed Up	LT1055	●	—	±30	±150	—	±40	±200	pA
		TA = 70°C	LT1056	●	—	±40	±80	—	±50	±240	pA
AVOL	Large-Signal Voltage Gain	VO = ±10V, RL = 2k		●	80	250	—	60	250	—	V/mV
CMRR	Common-Mode Rejection Ratio	VCm = ±10.5V		●	85	100	—	82	98	—	dB
PSRR	Power Supply Rejection Ratio	VS = ±10V to ±18V		●	89	105	—	87	103	—	dB
VOUT	Output Voltage Swing	RL = 2k		●	±12	±13.1	—	±12	±13.1	—	V

VS = ±15V, VCM = 0V, –55°C ≤ TA ≤ 125°C unless otherwise noted.

						LT1055AM			LT1055M
						LT1056AM			LT1056M
SYMBOL	PARAMETER	CONDITIONS			MIN	TYP	MAX	MIN	TYP	MAX	UNITS
VOS	Input Offset Voltage (Note1)		LT1055	●	—	180	500	—	250	1200	μV
			LT1056	●	—	180	550	—	250	1250	μV
	Average Temperature	(Note 5)		●	—	1.3	4.0	—	1.8	8.0	μV/°C
	Coefficient of Input Offset
	Voltage
IOS	Input Offset Current	Warmed Up	LT1055	●	—	0.20	1.2	—	0.25	1.8	nA
		TA = 125°C	LT1056	●	—	0.25	1.5	—	0.30	2.4	nA
IB	Input Bias Current	Warmed Up	LT1055	●	—	±0.4	±2.5	—	±0.5	±4.0	nA
		TA = 125°C	LT1056	●	—	±0.5	±3.0	—	±0.6	±5.0	nA
AVOL	Large-Signal Voltage Gain	VO = ±10V, RL = 2k		●	40	120	—	35	120	—	V/mV
CMRR	Common-Mode Rejection Ratio	VCM = ±10.5V		●	85	100	—	82	98	—	dB
PSRR	Power Supply Rejection Ratio	VS = ±10V to ±17V		●	88	104	—	86	102	—	dB
VOUT	Output Voltage Swing	RL = 2k		●	±12	±12.9	—	±12	±12.9	—	V

The ● denotes specifications which apply over the full operating temperature range.

For MIL-STD components, please refer to LTC883 data sheet for test listing and parameters.

Note 1: Offset voltage is measured under two different conditions:

(a) approximately 0.5 seconds after application of power; (b) at TA = 25°C only, with the chip heated to approximately 38°C for the LT1055 and to 45°C for the LT1056, to account for chip temperature rise when the device is fully warmed up.

Note 2: 10Hz noise voltage density is sample tested on every lot of A grades. Devices 100% tested at 10Hz are available on request.

Note 3: This parameter is tested on a sample basis only.

Note 4: Current noise is calculated from the formula: in = (2qlB)1/2, where q = 1.6 × 10–19 coulomb. The noise of source resistors up to 1GΩ

swamps the contribution of current noise.

Note 5: Offset voltage drift with temperature is practically unchanged when the offset voltage is trimmed to zero with a 100k potentiometer between the balance terminals and the wiper tied to V+. Devices tested to tighter drift specifications are available on request.

3

LT1055/LT1056

TYPICAL PERFORWAUCE CHARACTERISTICS

Input Bias and Offset Currents

Input Bias Current Over the

vs Temperature

Common-Mode Range

1000

(pA)

120

1200

CURRENT(pA)

VS = ±15V

VS = ±15V

300

70°C=

30

VCM = 0V

A

80

WARMED UP

800

T CURRENT, BIAS INPUT

WARMED UP

TA

= 125°C

BIAS OR OFFSET CURRENTS

A

TA = 70°C

T

MAY BE

POSITIVE

OR NEGATIVE

25°C,=

40

400

OFFSETANDBIASINPUT

100

A

TA = 25°C

TCURRENT,BIASINPUT

–120

–1200

(pA)125°C=

3

BIAS CURRENT

0

A

0

A

–40

–400

10

–80

TA = 70°C

TA =

125°C

–800

OFFSET CURRENT

B

A = POSITIVE INPUT CURRENT

B

B = NEGATIVE INPUT CURRENT

0

25

50

75

100

125

–15 –10 –5

0

5

10

15

AMBIENT TEMPERATURE (°C)

COMMON-MODE INPUT VOLTAGE (V)

LT1055/56 G01

LT1055/56 G02

NUMBER OF INPUTS

Distribution of Input Offset

Voltage (N8 Package)

160
	VS = ±15V																						50% YIELD
	TA = 25°C																										±
140	550 UNITS																							TO				140		V
120	TESTED FROM
	TWO RUNS
100	(LT1056)
80
60
40
20
0
																0		200					400					600		800
–800 –600 –400 –200

INPUT OFFSET VOLTAGE ( V)

LT1055/56 G03

Distribution of Offset Voltage Drift		Long Term Drift of
with Temperature (H Package)*	Warm-Up Drift	Representative Units

BATTERY VOLTAGE (V)

140
	VS = ±15V	50% TO
120	634 UNITS TESTED	±1.5 V/°C
	FROM THREE RUNS
100
80
60
40
20

0		–4							10
–10 –8	–6		–2	0	2	4	6	8

OFFSET VOLTAGE DRIFT WITH TEMPERATURE ( V/°C)

*DISTRIBUTION IN THE PLASTIC (N8) PACKAGE

IS SIGNIFICANTLY WIDER.

LT1055/56 G04

CHANGE IN OFFSET VOLTAGE (µV)

100	VS = ±15V						50	VS = ±15V
							40
	TA = 25°C							TA = 25°C
						µV)
80							30
						CHANGE
60							10
							20
		LT1056CN8				VOLTAGE	0
40		LT1055CN8					–10
20						OFFSET	–30
		LT1056 H PACKAGE
							–20
		LT1055 H PACKAGE					–40
0	1		3	4			–50
0		2			5		0	1	2	3	4	5

TIME AFTER POWER ON (MINUTES)	TIME (MONTHS)
LT1055/56 G05	LT1055/56 GO6

NOISE VOLTAGE (1µV/DIVISION)

0.1Hz to 10Hz Noise

Noise vs Chip Temperature

Voltage Noise vs Frequency

					)	10							100	1000
					P-P								Hz)(nV/DENSITYÖVOLTAGE NOISE RMS	VOLTAGENOISERMSDENSITY (nV/ÖHz)
					PEAK10HzTO0.1Hz-TO-PEAK NOISE (µV/	7
			LT1056						PEAK-TO-PEAK					300
						5				NOISE			50
						3	f0 = 10kHz						30	100
			LT1055
						2							20
														30
											f0 = 1kHz
0	2	4	6	8	10	1							10	10
						10	20	30	40	50	60	70	80

	VS = ±15V
	TA = 25°C
			LT1056
	1/f CORNER = 28HZ
	LT1055
	1/f CORNER
	= 20HZ
1	3	10	30	100	300	1000

TIME (SECONDS)

CHIP TEMPERATURE (°C)

FREQUENCY (Hz)

LT1055/56 GO7

LT1055/56 G08

LT1055/56 G09

4