HIT 3SK295 Datasheet
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
Outline
3SK295
ADE-208-387
1st. Edition
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK295
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
12 V
±8V
±8V
25 mA
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate 1 to source breakdown
V
(BR)G1SS
voltage
Gate 2 to source breakdown
V
(BR) G2SS
voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
G1SS
G2SS
DS(on)
G1S(off)
G2S(off)
Forward transfer admittance |yfs| 16 20.8 — mS V
Input capacitance Ciss 1.2 1.5 2.2 pF V
Output capacitance Coss 0.6 0.9 1.2 pF
Reverse transfer capacitance Crss — 0.01 0.03 pF
Power gain PG 16 19.5 — dB V
Noise figure NF — 2.0 3 dB
Note: Marking is “ZQ–”
12 — — V ID = 200 µA , V
V
= –3 V
G2S
±8— —V IG1 = ±10 µA, V
±8— —V IG2 = ±10 µA, V
——±100 nA V
——±100 nA V
0.5 — 10 mA V
–0.5 — +0.5 V V
0 — +1.0 V V
= ±6 V, V
G1S
= ±6 V, V
G2S
= 6 V, V
DS
V
= 3 V
G2S
= 10 V, V
DS
I
= 100 µA
D
= 10 V, V
DS
I
= 100 µA
D
= 6 V, V
DS
I
= 10 mA, f = 1 kHz
D
= 6 V, V
DS
I
= 10 mA, f = 1 MHz
D
= 4 V, V
DS
I
= 10 mA, f = 900 MHz
D
G1S
G2S
G1S
G2S
G2S
G2S
G2S
G1S
= 0.5V,
= 3V,
= 3V,
= 3V,
3SK295
= –3 V,
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
= VDS = 0
= 3V,
= 3V,
3
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