Silicon N-Channel Dual Gate MOS FET
Application
UHF TV tuner RF amplifier
Outline
MPAK-4
3SK186
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate 1 to source breakdown
V
(BR)G1SS
voltage
Gate 2 to source breakdown
V
(BR) G2SS
voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
DSS
Forward transfer admittance |yfs|15——mSV
Input capacitance Ciss — 1.7 2.2 pF V
Output capacitance Coss — 1.0 1.4 pF
Reverse transfer capacitance Crss — 0.017 0.03 pF
Power gain PG 16 19 — dB V
Noise figure NF — 3.0 4.5 dB
Note: Marking is “FI–”.
12 — — V V
±10 — — V IG1 = ±10 µA, V
±10 — — V IG2 = ±10 µA, V
——±100 nA V
——±100 nA V
+0.5 — –0.8 V V
+0.5 — –0.8 V V
0—4mAV
12 V
±10 V
±10 V
35 mA
= V
G2S
= ±8 V, V
= ±8 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 4 V, V
= –5 V,
G2S
G1S
G2S
G2S
G2S
G2S
G1S
I
= 200 µA
D
G1S
G2S
DS
I
= 100 µA
D
DS
I
= 100 µA
D
DS
DS
I
= 10 mA, f = 1 kHz
D
DS
I
= 10 mA, f = 1 MHz
D
DS
I
= 10 mA, f = 900 MHz
D
G2S
G1S
= 3V,
= 3V,
= 3V, V
= 3V,
= 3V,
= 3V,
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
= VDS = 0
G1S
= 0
2