HIT 2SK360 Datasheet
Application
VHF amplifier
Outline
MPAK
2SK360
Silicon N-Channel MOS FET
3
1
2
1. Gate
2. Drain
3. Source
2SK360
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
1
Drain to source voltage V
Gate to source voltage V
Drain current I
Gate current I
*
DSX
GSS
D
G
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. VGS = –4 V
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance
GSS
DSS
GS(off)
y
fs
Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1.6 — pF
Reverse transfer capacitance Crss — 0.03 — pF
Power gain PG — 30 — dB VDS = 10 V, VGS = 0,
Noise figure NF — 2.0 — dB
Note: 1. The 2SK360 is grouped by I
Grade D E F
Mark IGD IGE IGF
I
DSS
4 to 8 6 to 10 8 to 12
20 — — V ID = 100 µA, VGS = –4 V
——±20 nA VGS = ±5 V, VDS = 0
1
*
4 — 12 mA V
0 — –2.0 V VDS = 10 V, ID = 10 µA
8 14 — mS V
as follows.
DSS
20 V
±5V
30 mA
±1mA
= 10 V, VGS = 0
DS
= 10 V, VGS = 0,
DS
f = 1 kHz
f = 1 MHz
f = 100 MHz
See characteristic curves of 2SK359.
2
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