HIT 2SK359 Datasheet
Application
VHF amplifier
Outline
TO-92 (2)
2SK359
Silicon N-Channel MOS FET
1. Gate
2. Source
3. Drain
3
2
1
2SK359
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
1
Drain to source voltage V
Gate to source voltage V
Drain current I
Gate current I
*
DSX
GSS
D
G
Channel power dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. VGS = –4 V
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance
GSS
DSS
GS(off)
y
fs
Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1.6 — pF
Reverse transfer capacitance Crss — 0.03 — pF
Power gain PG — 30 — dB VDS = 10 V, VGS = 0,
Noise figure NF — 2 — dB
Note: 1. The 2SK359 is grouped by I
DEF
4 to 8 6 to 10 8 to 12
20 — — V ID = 100 µA, VGS = –4 V
——±20 nA VGS = ±5 V, VDS = 0
1
*
4 — 12 mA V
0 — –2.0 V VDS = 10 V, ID = 10 µA
8 14 — mS V
as follows.
DSS
20 V
±5V
30 mA
±1mA
= 10 V, VGS = 0
DS
= 10 V, VGS = 0,
DS
f = 1 kHz
f = 1 MHz
f = 100 MHz
2
2SK359
Maximum Channel Dissipation Curve
600
(mW)
ch
400
200
Channel Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
10.0
VDS = 10 V
8.0
(mA)
D
6.0
Typical Output Characteristics
10
= 0 V
V
GS
8
(mA)
D
6
–0.1
–0.2
–0.3
4
Drain Current I
2
–0.4
–0.5
–0.6
–0.7
–0.8
15010050
0
Drain to Source Voltage V
DS
102468
(V)
Forward Transfer Admittance vs.
Drain to Source Voltage
20
(mS)
fs
16
F
12
E
4.0
Drain Current I
2.0
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate to Source Voltage V
GS
(V)
D
8
4
VGS = 0
f = 1 kHz
Forward Transfer Admittance y
0
Drain to Source Voltage V
610482
(V)
DS
3
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