HIT 2SK3348 Datasheet
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA)
RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)
• 2.5 V gate drive device.
• Small package (CMPAK)
Outline
2SK3348
ADE-208-772 A (Z)
2nd.Edition.
June 1999
CMPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SK3348
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note 2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 143 220 — mS I
Input capacitance Ciss — 18 — pF VDS = 10 V
Output capacitance Coss — 15 — pF VGS = 0
Reverse transfer capacitance Crss — 5 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is CN
20 — — V ID = 100 µA, VGS = 0
±10 — — V IG = ±100 µA, VDS = 0
——±5 µAVGS = ±8 V, VDS = 0
——1 µAVDS = 20 V, VGS = 0
0.8 — 1.8 V ID = 10µA, VDS = 5 V
— 1.6 1.9 Ω I
— 2.2 3.2 Ω I
—73—nsI
— 290 — ns RL = 200Ω
— 360 — ns
— 360 — ns
20 V
±10 V
100 mA
400 mA
100 mA
300 mW
= 50 mA,VGS = 4 V
D
= 50 mA,VGS = 2.5 V
D
= 50 mA, VDS = 10 V
D
= 50 mA, VGS = 4 V
D
Note 3
Note 3
Note 3
2
Main Characteristics
2SK3348
Power vs. Temperature Derating
400
300
200
100
Channel Disspation *Pch (mW)
0
50 100 150 200
Ambient Temperature Ta ( °C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
10 V
8 V
1.0
0.8
D
0.6
6 V
5 V
V = 4 V
GS
Pulse Test
3 V
Maximum Safe Operation Area
5
2
1.0
0.5
D
0.2
0.1
0.05
0.02
Operation in this area
0.01
is limited by RDS(on)
0.005
Drain Current I (A)
0.002
0.001
Ta = 25 °C
0.0005
0.05
0.1 1.0 10 50
0.2 0.5
Drain to Source Voltage V (V)
Value on the alumina ceramic boad.(12.5x20x0.7mm)
DC Operation
5
2
DS
20
Typical Transfer Characteristics
0.5
V = 10 V
DS
Pulse Test
0.4
D
0.3
10 µs
100 µs
1 ms
PW = 10 ms
(1 shot)
0.4
Drain Current I (A)
0.2
0
246810
Drain to Source Voltage V (V)
2 V
1 V
DS
0.2
0.1
Drain Current I (A)
75 °C
0
12345
Gate to Source Voltage
Tc = –25 °C
25 °C
V
GS
(V)
3
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