HIT 2SK3000 Datasheet
2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-585 (Z) 1st. Edition December 1997
Features
•Low on-resistance
RDS(on) = 0. 25Ω typ. (VGS = 10 V, ID = 450 mA)
•4V gate drive devices.
•Small package (MPAK)
•Expansive drain to source surge power capability
Outline
MPAK
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3 |
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1. |
Source |
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2. |
Gate |
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3. |
Drain |
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2SK3000
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
40 |
V |
Gate to source voltage |
VGSS |
±10 |
V |
Drain current |
ID |
1.0 |
A |
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Drain peak current |
Note1 |
4.0 |
A |
ID(pulse) |
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Reverse drain current |
IDR |
1.0 |
A |
Channel dissipation |
Pch Note2 |
400 |
mW |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % |
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2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt ) |
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Electrical Characteristics (Ta = 25°C) |
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Symbol |
Min |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
40 |
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— |
60 |
V |
I D = 100µA, VGS = 0 |
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voltage |
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Drain to source voltage |
VDS(SUS) |
40 |
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— |
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V |
L = 100 |
µH, ID = 3 A |
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Gate to source breakdown |
V(BR)GSS |
±10 |
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— |
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V |
I |
G = ±100µA, VDS = 0 |
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voltage |
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Zero gate voltege drain current IDSS |
— |
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1.0 |
µA |
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VDS = |
40 V, VGS = 0 |
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Gate to source leak current |
IGSS |
— |
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— |
±5 |
µA |
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VGS = ±6.5V, VDS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.1 |
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— |
2.1 |
V |
I D = 10µA, VDS = 5V |
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Static drain to source on state RDS(on) |
— |
0.3 |
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0.5 |
Ω |
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ID = 450 mA |
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resistance |
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VGS = |
4V Note3 |
Static drain to source on state RDS(on) |
— |
0.25 |
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0.3 |
Ω |
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ID = 450 mA |
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resistance |
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VGS = |
10V Note3 |
Forward transfer admittance |
|yfs| |
0.5 |
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1.2 |
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— |
S |
I D = 450 mA |
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VDS = |
10V Note3 |
Input capacitance |
Ciss |
— |
14.0 |
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— |
pF |
V |
DS = |
10V |
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Output capacitance |
Coss |
— |
68 |
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pF |
V |
GS = |
0 |
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Reverse transfer capacitance |
Crss |
— |
3.0 |
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— |
pF |
f = 1MHz |
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Turn-on delay time |
td(on) |
— |
0.12 |
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— |
µs |
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VGS = 4V, ID = 450 mA |
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Rise time |
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tr |
— |
0.6 |
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— |
µs |
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RL = 22Ω |
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Turn-off delay time |
td(off) |
— |
1.7 |
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— |
µs |
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Fall time |
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tf |
— |
1.4 |
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— |
µs |
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Note: 3. |
Pulse test |
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4. |
Marking is “ZY”. |
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2
2SK3000
Main Characteristics
Power vs. Temperature Derating
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0.8 |
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(W) |
0.6 |
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Pch |
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Dissipation |
0.4 |
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Channel |
0.2 |
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0 |
50 |
100 |
150 |
200 |
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Ambient Temperature |
Ta (°C) |
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Typical Output Characteristics
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5.0 |
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10 V 6 V |
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Pulse Test |
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5 V |
4 V |
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(A) |
4.0 |
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D |
4.5 V |
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I |
3.0 |
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Current |
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3.5 V |
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2.0 |
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Drain |
1.0 |
3 V |
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VGS = 2.5 V |
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0 |
2 |
4 |
6 |
8 |
10 |
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Drain to Source Voltage |
VDS (V) |
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Maximum Safe Operation Area
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5 |
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50 µs |
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0 |
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2 |
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1 |
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(A) |
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ms |
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1 |
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1 |
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ms |
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D |
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0.5 |
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PW |
10 |
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I |
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ms |
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Current |
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= |
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100 |
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0.2 |
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DC |
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ms |
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0.1 |
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Operation |
(1 |
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Drain |
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0.05 |
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shot) |
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Operation in |
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Note |
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this area is |
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0.02 |
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5 |
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0.01 |
limited by R DS(on) |
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Ta = 25 °C |
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0.05 |
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0.2 |
0.5 |
1 |
2 |
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5 |
10 |
20 |
50 100 200 |
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Drain to Source Voltage |
V DS (V) |
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Note5 : When using the glass epoxy board |
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(10mm x 10mm x 1mmt) |
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Typical Transfer Characteristics
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10 |
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(A) |
1 |
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25°C |
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D |
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125°C |
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I |
100m |
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Drain Current |
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Tc = –25°C |
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10m |
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1m |
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V DS = 5 V |
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100µ |
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Pulse Test |
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0 |
1 |
2 |
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4 |
5 |
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Gate to Source Voltage |
V GS (V) |
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