HIT 2SK3290 Datasheet

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA)
RDS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)

• 4 V gate drive device.

• Small package (MPAK)

Outline

2SK3290

ADE-208-744 C (Z)

4th.Edition.

June 1999

MPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SK3290

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 350 540 — mS I
Input capacitance Ciss — 5 — pF VDS = 10 V
Output capacitance Coss — 30 — pF VGS = 0
Reverse transfer capacitance Crss — 2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is BN

30 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5 µAVGS = ±16 V, VDS = 0
——-1µAVDS = 30 V, VGS = 0

1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 0.455 0.525 Ω I
— 0.9 1.25 Ω I

— 240 — ns ID = 250 mA, VGS = 10 V
— 1700 — ns RL = 40Ω
— 850 — ns
— 1300 — ns

30 V
±20 V
500 mA
2A
500 mA
400 mW

= 250 mA,VGS = 10 V

D

= 100 mA,VGS = 4 V

D

= 250 mA, VDS = 10 V

D

Note 3

Note 3

Note 3

2

Main Characteristics

2SK3290

Power vs. Temperature Derating

800

600

400

200

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad (12.5x20x0.7mm)

Typical Outout Characteristics

6 V

2.0

7 V

Pulse Test

1.6
5V

D

1.2

Maximum Safe Operation Area

5
2

1.0

0.5

D

0.2

0.1

0.05

0.02
Operation in this area

0.01

0.005

Drain Current I (A)

0.002

0.001

0.0005

is limited by RDS)on)

Ta=25 °C

0.1 1.0 10

0.05 0.2

0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic boad.(12.5x20x0.7mm)

PW = 10 ms

DC Operation

(1 shot)

5

2

20

DS

Typical Transfer Characteristics

2.0

1.6

D

75°C

1.2

25°C

Tc = –25°C

10 µs
100 µs
1 ms

50

0.8

Drain Current I (A)

0.4

0

246810

Drain to Source Voltage V (V)

4 V

V = 3 V

GS

DS

0.8

Drain Current I (A)

0.4

0

246810

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3