HIT 2SK3288 Datasheet
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA)
RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
2SK3288
ADE-208-803 (Z)
1st.Edition.
June 1999
MPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SK3288
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note 2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|5585—mSI
Input capacitance Ciss — 3 — pF VDS = 10 V
Output capacitance Coss — 8 — pF VGS = 0
Reverse transfer capacitance Crss — 1 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is EN
30 — — V ID = 100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 2.7 3.5 Ω I
— 4.7 7.0 Ω I
— 100 — ns ID = 50 mA, VGS = 10 V
— 300 — ns RL = 200 Ω
— 1100 — ns
— 900 — ns
30 V
±20 V
100 mA
400 mA
100 mA
400 mW
= 50 mA,VGS = 10 V
D
= 20 mA,VGS = 4 V
D
= 50 mA, VDS = 10 V
D
Note 3
Note 3
Note 3
2
Main Characteristics
2SK3288
800
Power vs. Tenperature Derating
600
400
200
Channel Dissipation *Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
*Value on the alumina ceramic boad. (12.5x20x0.7mm)
Typical Output Characteristics
8 V
0.5
7 V
6 V
0.4
D
0.3
Pulse Test
5 V
Maximum Safe Operation Area
5
2
1.0
0.5
D
0.2
0.1
0.05
0.02
0.01
Operation in this area
0.005
Drain Current I (A)
0.0005
is limited by RDS(on)
0.002
0.001
Ta=25°C
0.1 1.0
0.05
0.2 0.5 2 5
Drain to Source Voltage V (V)
Value on the alumina ceramic boad. (12.5x20x0.7mm)
DC Operation
20
10
DS
Typical Transfer Characteristics
500
75°C
400
25°C
D
300
Tc = –25°C
10 µs
100 µs
1 ms
PW = 10 ms
(1 shot)
50
0.2
Drain Current I (A)
0.1
0
246810
Drain to Source Voltage V (V)
4 V
V = 3V
GS
DS
200
Drain Current I (mA)
100
0
246810
Gate to Sourve Voltage V (V)
V = 10 V
DS
Pulse Test
GS
3
Loading...