HIT 2SK3233 Datasheet
Features
2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z)
1st. Edition
Mar. 2001
• Low on-resistance: R
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
• Avalanche ratings
= 1.1 Ω typ.
DS(on)
Outline
TO–220CFM
D
G
S
1
2
3
1. Gate
2. Drain
3. Source
2SK3233
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current ID
Body-drain diode reverse drain
DSS
GSS
D
Note1
(pulse)
I
DR
current
Body-drain diode reverse drain peak
IDR
(pulse)
Note1
current
Avalanche current IAP
Channel dissipation Pch
Note3
Note2
Channel to case Tehrmal Impedance θ ch-c 4.17 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
500 V
±30 V
5A
20 A
5A
20 A
5A
30 W
2
2SK3233
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 3.0 4.5 — S ID = 2.5 A, VDS = 10 V
Input capacitance Ciss — 580 — pF VDS = 25 V
Output capacitance Coss — 70 — pF VGS = 0
Reverse transfer capacitance Crss — 13 — pF f = 1 MHz
Turn-on delay time td(on) — 20 — ns ID = 2.5 A
Rise time tr — 15 — ns VGS = 10 V
Turn-off delay time td(off) — 65 — ns RL = 100 Ω
Fall time tf — 15 — ns Rg = 10 Ω
Total gate charge Qg — 15 — nC VDD = 400 V
Gate to source charge Qgs — 3 — nC VGS = 10 V
Gate to drain charge Qgd — 8 — nC ID = 5 A
Body-drain diode forward
V
DF
voltage
Body-drain diode reverse
trr — 400 — ns IF = 5 A, VGS = 0
recovery time
Body-drain diode reverse
Qrr — 1.5 — µC diF/dt = 100 A/µs
recovery charge
Note: 4. Pulse test
500 — — V ID = 10 mA, VGS = 0
—— ±0.1 µAV
—— 1 µAV
= ±30 V, VDS = 0
GS
= 500 V, VGS = 0
DS
3.0 — 4.0 V VDS = 10 V, ID = 1 mA
— 1.1 1.5 Ω ID = 2.5 A, VGS = 10 V
— 0.85 1.3 V IF = 5 A, VGS = 0
Note4
Note4
3
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