HIT 2SK3229 Datasheet

2SK3229

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

=6mΩ typ.

DS(on)

• Low drive current

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-766(Z)

Target specification

1st. Edition

December 1998

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SK3229

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

3

1

*

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

80 V
±20 V
60 A
240 A
60 A
50 A
181 mJ
35 W

2