HIT 2SK3228 Datasheet

2SK3228

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

=6mΩ typ.

DS(on)

• Low drive current

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-765A(Z)

Target specification

2nd. Edition

December 1998

TO–220AB

G

D

3

1. Gate

2. Drain(Flange)

3. Source

1

2

S

2SK3228

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

80 V
±20 V
75 A
300 A
75 A
50 A
181 mJ
100 W

2