Datasheet IRFB812PBF Datasheet

PD -97693

IRFB812PbF

Applications

• Zero Voltage Switching SMPS

• Uninterruptible Power Supplies

• Motor Control applications

V

DSSRDS(on)

500V

HEXFET® Power MOSFET

Trr

typ.

I

75ns 3.6A

1.75Ω

typ.

Features and Benefits

• Fast body diode eliminates the need for external
diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Higher Gate voltage threshold offers improved noise

immunity

.

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

I

@ TC = 25°C Continuous Drain Current, V

D

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V 2.3 A

D

I

DM

P

@TC = 25°C Power Dissipation 78 W

D

V

GS

dv/dt

T

J

T

STG

Pulsed Drain Current

Linear Derating Factor 0.63 W/°C

Gate-to-Source Voltage ± 20 V

Peak Diode Recovery dv/dt

Operating Junction and -55 to + 150

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

c

@ 10V 3.6

GS

e

10lbxin (1.1Nxm)

14.4

32 V/ns

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

I

V

t

Q

I

t

S

SM

SD

rr

rr

RRM

on

Continuous Source Current ––– ––– 3.6 MOSFET symbol

(Body Diode) A showing the
Pulsed Source Current ––– ––– 14.4 integral reverse

(Body Diode)
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 3.6A, VGS = 0V

Reverse Recovery Time ––– 75 110 ns TJ = 25°C, IF = 3.6A

Reverse Recovery Charge ––– 135 200 nC

Reverse Recovery Current ––– 3.2 4.8 A

Forward Turn-On Time

c

p-n junction diode.

––– 94 140 T

––– 220 330 TJ = 125°C, di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

= 125°C, di/dt = 100A/μs

J

= 25°C, IS = 3.6A, VGS = 0V

T

J

= 25°C

T

J

G

f

f

f

f

Notes  through  are on page 2

www.irf.com 1

D

D

S

6/23/11

IRFB812PbF

)

z

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

Δ

V

R

DS(on)

V

GS(th)

I

DSS

I

GSS

(BR)DSS

Drain-to-Source Breakdown Voltage 500 ––– ––– V

/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.37 ––– V/°C

Static Drain-to-Source On-Resistance ––– 1.75 2.2

Ω

Gate Threshold Voltage 3.0 ––– 5.0 V

Drain-to-Source Leakage Current ––– ––– 25 μA

––– ––– 2.0 mA

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

VGS = 0V, ID = 250μA

Reference to 25°C, I

V

GS

V

DS

V

DS

V

DS

VGS = 20V

V

GS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 7.6 ––– ––– S
Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 5.9 –––

oss

eff. (ER) Effective Output Capacitance ––– 37 –––

C

oss

Total Gate Charge ––– ––– 20

Gate-to-Source Charge ––– ––– 7.3 nC

Gate-to-Drain ("Miller") Charge ––– ––– 7.1

Turn-On Delay Time ––– 14 –––

Rise Time –––22–––ns

Turn-Off Delay Time ––– 24 –––

Fall Time –––17–––

Input Capacitance ––– 810 –––

Output Capacitance ––– 47 –––

Reverse Transfer Capacitance ––– 7.3 –––

Output Capacitance ––– 610 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Output Capacitance ––– 16 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MH

(Energy Related)

VDS = 50V, ID = 2.2A

= 3.6A

I

D

V

DS

V

GS

VDD = 250V

= 3.6A

I

D

R

G

V

GS

VGS = 0V

V

DS

ƒ = 1.0MHz, See Fig. 5

V

GS

Avalanche Characteristics

E

AS

I

AR

E

AR

Symbol

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Parameter Typ. Units

d

c

c

––– mJ

––– A

––– mJ

Thermal Resistance

Symbol Parameter Typ. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 0.5 °C/W
Junction-to-Ambient

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 11)

 Starting T

I

AS

 I

SD

TJ ≤ 150°C.

= 25°C, L = 93mH, RG = 25Ω,

J

= 1.8A. (See Figure 13).

= 3.6A, di/dt ≤ 520A/μs, VDDV

h

(BR)DSS

–––

h

–––

 Pulse width ≤ 300μs; duty cycle ≤ 2%.
 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

,

 R

while V

oss

C

eff.(ER) is a fixed capacitance that stores the same energy

oss

as C

while VDS is rising from 0 to 80% V

oss

is measured at TJ approximately 90°C

θ

is rising from 0 to 80% V

DS

2 www.irf.com

Conditions

= 250μA

D

= 10V, ID = 2.2A

f

= VGS, ID = 250μA

= 500V, VGS = 0V
= 400V, VGS = 0V, TJ = 125°C

= -20V

Conditions

= 400V

= 10V, See Fig.14a &14b

= 17Ω

= 10V, See Fig. 15a & 15b

= 25V

= 0V,VDS = 0V to 400V

Max.

150

1.8

7.8

Max.

1.6

–––

62

.

DSS

.

DSS

f

f

g

IRFB812PbF

100

5.3V

VGS

10V

6.2V

5.9V

5.8V

5.6V

5.5V

60μs PULSE WIDTH

≤

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

TOP 15V

10

BOTTOM 5.3V

1

0.1

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

100

V

= 50V

DS

60μs PULSE WIDTH

10

≤

TJ = 150°C

1

TJ = 25°C

)
A

(

t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

0.1
4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

100

TOP 15V

)
A

(
t
n
e

r

10

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

BOTTOM 5.3V

1

0.1

VGS

10V

6.2V

5.9V

5.8V

5.6V

5.5V

5.3V

60μs PULSE WIDTH

≤

Tj = 150°C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID = 3.6A

V

= 10V

GS

2.5

2.0

)
d
e
z

i

l

1.5

a
m

r
o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3

IRFB812PbF

100000

10000

)
F
p

(
e

1000

c
n
a

t

i
c
a
p

100

a
C

,
C

10

1

V

= 0V, f = 1 MHZ

GS

C

= C

= C

= C

gs

gd

ds

C

C

oss

C

+ Cgd, C

+ C

iss

rss

iss

C

rss

C

oss

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

)
V

(

650

e

SHORTED

ds

gd

g
a

t

l
o
V

n
w

o
d
k
a
e

r
B

e
c

r
u
o
S

­o

t

­n

i
a

r
D

,

S
S
D

)
R
B

(

V

Id = 250uA

600

550

500

-60 -40 -20 0 20 40 60 80 100 120140 160

TJ , Temperature ( °C )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

16

)
V

(
e

g
a

t

l
o
V

e
c

r
u
o
S

­o

t

­e

t
a

G
,

V

ID= 3.6A

VDS= 400V

12

8

4

S
G

0

0 4 8 12 16

VDS= 250V

VDS= 100V

Q

Total Gate Charge (nC)

G

Fig 6. Typ. Breadown Voltage

vs. Temperature

100

)
A

(
t
n
e

r

r

10

u
C
n

i
a

r
D
e

s

r
e
v

1

e
R

,

D
S

I

0.1

0.2 0.4 0.6 0.8 1.0

VSD, Source-to-Drain Voltage (V)

TJ = 150°C

TJ = 25°C

V

GS

= 0V

4 www.irf.com

4

3

)
A

(
t
n
e

r

r
u

C

2

n

i
a

r
D

,

D

I

1

0

25 50 75 100 125 150

TC , CaseTemperature (°C)

IRFB812PbF

)

3.0

Ω

(
e

c
n
a

t
s

i
s
e

R

2.5

n
O
e

c

r
u
o
S

­o

t

­n

i

2.0

a

r
D

,

)
n
o

(
S

D

R

1.5
01234567

V

= 20V

GS

V

GS

ID , Drain Current (A)

= 10V

Fig 9. Maximum Drain Current Vs.

Fig 9. Typical Rdson Vs. Drain Current

Case Temperature

10

)

C

1

J
h

t

Z
(

e
s
n
o
p
s
e

R
l
a

m

r
e
h
T

0.001

D = 0.50

0.20

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFB812PbF

A

100

)
A

(
t

10

n
e

r

r
u

C
e

c

r
u

1

o
S

­o

t

­n

i
a

r
D

0.1

,

D

I

Tc = 25°C
Tj = 150°C
Single Pulse

0.01
1 10 100 1000

Fig 12. Maximum Safe Operating Area

OPERATION IN THIS AREA
LIMITED BY RDS(on)

100μsec

1msec

10msec

VDS, Drain-toSource Voltage (V)

15V

DC

700

)
J

m

(

600

y
g

r
e
n
E

500

e
h
c
n

400

a

l
a
v
A

300

e
s

l
u
P

e

200

l
g
n

i
S

,

100

S
A

E

0

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

vs. Drain Current

V

t

p

I

TOP 0.4A

D

0.7A

BOTTOM 1.8A

(BR)DSS

L

D.U.T

I

AS

Ω

0.01

t

p

R

20V

V

DS

G

Fig 13a. Unclamped Inductive Test Circuit

DRIVER

+

V

DD

-

I

AS

Fig 13b. Unclamped Inductive Waveforms

Vds

L

0

DUT

1K

Fig 14a. Gate Charge Test Circuit

VCC

Vgs(th)

Qgs1

Qgs2 Qgd Qg odr

Fig 14b. Gate Charge Waveform

6 www.irf.com

Id

Vgs

IRFB812PbF

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1

Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f





Reverse
Recovery
Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance
Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied
Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

www.irf.com 7

IRFB812PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

LOT CODE 178 9
ASS EMBL ED ON WW 19, 2000
IN THE AS SEMBLY LINE "C"

Note: "P" in ass embly line position

i ndicat es "L ead - F r ee"

INTE RNATIONAL

RECTIFIER

LOGO

ASSEMBLY
LOT CODE

TO-220AB packages are not recommended for Surface Mount Application.

Note:For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

Visit us at www.irf.com for sales contact information.06/11

8 www.irf.com

PART NUMBER

DATE CODE
YEAR 0 = 2000
WEEK 19
LINE C

TAC Fax: [phone]