Datasheet IRFB4228PBF Datasheet

J

t

f

PD - 97227A

PDP SWITCH

Features

l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l Low E

Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

l Low Q l High Repetitive Peak Current Capability for

Reliable Operation

l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for

Improved Ruggedness

l Repetitive Avalanche Capability for Robustness

and Reliability

Rating to Reduce Power

PULSE

for Fast Response

G

V

min

DS

V

DS (Avalanche)

DS(ON)

typ. @ 10V

R IRP max @ TC= 100°C T

max

J

G

GDS

IRFB4228PbF

Key Parameters

150 V

typ.

D

S

180 V

12 170 A 175 °C

D

TO-220AB

m

:

D

G

Gate Drain Source

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E

rating. Additional features of this MOSFET are 175°C

PULSE

operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

S

Absolute Maximum Ratings

Parameter Units

V

GS

@ TC = 25°C Continuous Drain Current, VGS @ 10V

I

D

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V

D

I

DM

IRP @ TC = 100°C

PD @TC = 25°C

P

@TC = 100°C

D

T

J

T

STG

Gate-to-Source Voltage V

Pulsed Drain Current

Repetitive Peak Current

Power Dissipation W

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

c

g

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θ

CS

R

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

unction-to-Ambien

Notes  through  are on page 8

f

Max.

±30

83

59

330

170

330

170

2.2

-40 to + 175

300

x

in (1.1Nxm)

10lb

––– 0.45

––– 62

A

www.irf.com 1

09/14/07

IRFB4228PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆Β

R

V

∆V I

DSS

I

GSS

g

Q

t

d(on)

t

r

t

d(off)

t

f

t

st

E

C

L

DSS

V

DS(on)

GS(th)

fs

g

gd

PULSE

iss

oss

rss

oss

D

S

DSS

eff.

/∆T

Drain-to-Source Breakdown Voltage 150 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 12 15

mΩ Gate Threshold Voltage 3.0 ––– 5.0 V

Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 1.0 mA

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Forward Transconductance 170 ––– ––– S

Total Gate Charge ––– 71 107 nC

Gate-to-Drain Charge ––– 21 –––

Turn-On Delay Time ––– 18 –––

Rise Time ––– 59 ––– ns

Turn-Off Delay Time ––– 24 –––

Fall Time ––– 33 –––

Shoot Through Blocking Time 100 ––– ––– ns

Energy per Pulse µJ

––– 58 –––

––– 110 –––

Input Capacitance ––– 4530 –––

Output Capacitance ––– 550 ––– pF

Reverse Transfer Capacitance ––– 100 –––

Effective Output Capacitance ––– 480 –––

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

V

= 10V, ID = 33A

GS

= VGS, ID = 250µA

V

DS

V

= 150V, VGS = 0V

DS

VDS = 150V, VGS = 0V, TJ = 125°C

VGS = 20V

V

= -20V

GS

= 25V, ID = 50A

V

DS

V

= 75V, ID = 50A, VGS = 10V

DD

V

= 75V, VGS = 10V

DD

I

= 50A

D

= 2.5Ω

R

G

See Fig. 22

V

= 120V, VGS = 15V, RG= 5.1Ω

DD

L = 220nH, C= 0.3µF, V

V

= 120V, RG= 5.1Ω, TJ = 25°C

DS

L = 220nH, C= 0.3µF, V

= 120V, RG= 5.1Ω, TJ = 100°C

V

DS

VGS = 0V

VDS = 25V

ƒ = 1.0MHz V

= 0V, VDS = 0V to 120V

GS

and center of die contact

e

e

= 15V

GS

= 15V

GS

e

G

D

S

Avalanche Characteristics

Typ. Max.

––– 120

–––

33

180 –––

–––

50

mJ

V

A

E

AS

E

AR

V

DS(Avalanche)

I

AS

Parameter Units

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche Voltage

Avalanche Current

d

d c c

Diode Characteristics

Conditions

e

IS @ TC = 25°C

I

SM

V

SD

t

rr

Q

rr

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 83

(Body Diode) A

Pulsed Source Current ––– ––– 330

(Body Diode)

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 76 110 ns

Reverse Recovery Charge ––– 230 350 nC

c

MOSFET symbol

showing the

integral reverse

p-n junction diode.

= 25°C, IS = 50A, VGS = 0V

T

J

= 25°C, IF = 50A, VDD = 50V

T

J

di/dt = 100A/µs

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e

IRFB4228PbF

1000

TOP 15V

)

100

A

( t n e

r

r u

10

C e

c

r u o S

-

1

o

t

n

i a

r D

,

0.1

D

I

5.0V

≤

BOTTOM 5.0V

60µs PULSE WIDTH

Tj = 25°C

0.01

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

1

TJ = 175°C

TJ = 25°C

V

= 25V

DS

≤

60µs PULSE WIDTH

0.1 3 4 5 6 7 8 9 10 11

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

10V

8.0V

7.0V

6.5V

6.0V

5.5V

1000

VGS

10V

8.0V

7.0V

6.5V

6.0V

5.5V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

100

D

10

TOP 15V

BOTTOM 5.0V

5.0V

60µs PULSE WIDTH

≤

1

Tj = 175°C

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 50A

V

GS

= 10V

3.0

2.5

) d

2.0

e z

i

l a

m

1.5

r o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

120

90

80

70

60

50

L = 220nH C = 0.3µF 100°C 25°C

110

100

) J µ

( e

s

l u P r e p

y g

r e n E

40

30

20

85 90 95 100 105 110 115 120 125

V

Drain-to-Source Voltage (V)

DS,

vs. Drain-to-Source Voltage

PULSE

120

L = 220nH

110

C = Variable

100

100°C

90

80

70

60

50

40

25°C

) J µ

( e

s

l u P r e p

y g

r e n E

30

20

10

60 65 70 75 80 85 90 95 100 105

ID, Peak Drain Current (A)

Fig 6. Typical E

PULSE

vs. Drain CurrentFig 5. Typical E

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IRFB4228PbF

140

120

)

100

J µ

( e

s

l

80

u P r e p

60

y g

r e n

40

E

20

0

20 40 60 80 100 120 140 160

Fig 7. Typical E

100000

10000

) F p

( e

c n a

t

1000

i c a p a

C ,

C

100

L = 220nH

C = 0.3µF

C = 0.2µF

C = 0.1µF

V

GS

C

iss

C

rss

C

oss

Temperature (°C)

vs.Temperature

PULSE

= 0V, f = 1 MHZ

= C

+ Cgd, C

gs

= C

gd

= C

+ C

ds

gd

C

iss

C

oss

C

rss

SHORTED

ds

1000

) A

( t

100

n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

1

D S

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

TJ = 175°C

TJ = 25°C

V

GS

VSD, Source-to-Drain Voltage (V)

= 0V

Fig 8. Typical Source-Drain Diode Forward Voltage

12.0 ID= 50A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

VDS= 120V

VDS= 75V

VDS= 30V

10

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

90

80

70

) A

(

60

t n e

r

50

u C n

i

40

a

r D

30

,

D

I

20

10

0

25 50 75 100 125 150 175

TJ , Junction Temperature (°C)

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

0.0 0 1020304050607080

QG, Total Gate Charge (nC)

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

i

10

a

r D ,

D

Tc = 25°C

I

Tj = 175°C Single Pulse

1

1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

10msec

VDS, Drain-to-Source Voltage (V)

1msec

Fig 12. Maximum Safe Operating Area

4 www.irf.com

)

τ

60

Ω

m (

e c

50

n a

t s

i s e

R

40

n O e

c

r

30

u o S

o

t

-

20

n

i a

r D ,

10

) n o

( S D

0

R

TJ = 125°C

TJ = 25°C

4 6 8 10 12 14 16 18

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance vs. Gate Voltage

ID = 50A

IRFB4228PbF

500

) J

m

( y

g

r

400

e n E

e h c n

300

a

l a v A

e s

l

200

u P

e

l g n

i

100

S ,

S A

E

TOP 13A

BOTTOM50A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Temperature

I

D

20A

5.0

)

4.5

V

( e

g a

4.0

t

l o V

d

3.5

l o h s e

3.0

r h T

e

t

2.5

a G

,

)

2.0

h

t

( S G

1.5

V

ID = 250µA

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 15. Threshold Voltage vs. Temperature

1

)

C J h

t

Z (

e s n o p s e

R l a

0.01

m

r e h T

0.001

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

250

ton= 1µs Duty cycle = 0.25

) A

( t n e

r

r u

C k

a e P

e v

i

t

i

t e p e

R

200

150

100

50

Half Sine Wave Square Pulse

0

25 50 75 100 125 150 175

Case Temperature (°C)

Fig 16. Typical Repetitive peak Current vs.

Case temperature

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.0852 0.000052

τ

3

0.1882 0.000980

τ

3

0.1769 0.008365

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFB4228PbF

A

D.U.T

+



-



R

G

*

Use P-Channel Driver for P-Channel Measurements

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

*

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

** Reverse Polarity for P-Channel

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

15V

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

Reverse Recovery Current

D.U.T. VDSWaveform

V

Re-Applied

DD

Voltage

+

**

-

Inductor Curent

*** V

GS

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

t

P. W .

D =

Period

***

VGS=10V

V

DD

I

SD

V

(BR)DSS

p

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 19a. Unclamped Inductive Test Circuit

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 20a. Gate Charge Test Circuit

I

AS

Fig 19b. Unclamped Inductive Waveforms

Vds

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Id

Vgs

Fig 20b. Gate Charge Waveform

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IRFB4228PbF

A

RG

DRIVER

C

L

PULSE A

B

RG

Fig 21a. t

and E

st

Ipulse

DUT

PULSE

VCC

Test Circuit

PULSE B

Fig 21b. tst Test Waveforms

t

ST

Fig 21c. E

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 22a. Switching Time Test Circuit

+

V

DD

-

Test Waveforms

PULSE

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 22b. Switching Time Waveforms

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IRFB4228PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

1RWH3LQDVVHPEO\OLQHS RVLWL RQ

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,17(51$7,21$/

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$66(0%/< /27&2'(

TO-220AB packages are not recommended for Surface Mount Application.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 0.096mH, RG = 25Ω, I

J

AS

= 50A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 R

is measured at T

θ

of approximately 90°C.

J

 Half sine wave with duty cycle = 0.25, ton=1µsec.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2007

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