Datasheet IRFHS9301pbf Datasheet

Pulsed Drain Current

c

Power Dissipation

f

Power Dissipation

f

G

3

S

D2

D1

4S

5D

6D

TOP VIEW

D

IRFHS9301PbF

DSon

Ω)

≤

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = -10V)

Q

g (typical)

I

D

(@TC = 25°C)

-30 V

±20 V

37

13 nC

-8.5

d

mΩ

A

2mm x 2mm PQFN

Applications

l Charge and Discharge Switch for Battery Application l System/load switch

Features and Benefits

Features Benefits

Low R

Low Thermal Resistance to PCB (

Low Profile (

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification Increased Reliability

(≤ 37m

13°C/W) Enable better thermal dissipation

1.0 mm) results in Increased Power Density

Lower Conduction Losses

Easier Manufacturing

Environmentally Friendlier

D

S

G

S

Orderable part number Package Type

IRFHS9301TRPBF PQFN 2mm x 2mm Tape and Reel 4000

IRFHS9301TR2PBF

PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

I

@ TA = 25°C Continuous Drain Current, VGS @ -10V

D

I

@ TA = 70°C Continuous Drain Current, VGS @ -10V

D

I

@ TC = 25°C Continuous Drain Current, VGS @ -10V

D

I

@ TC = 70°C Continuous Drain Current, VGS @ -10V

D

I

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

D

I

DM

PD @TA = 25°C

PD @ TA = 70°C

T

J

T

STG

Notes  through  are on page 2

Drain-to-Source Voltage

Gate-to-Source Voltage

Linear Derating Factor W/°C Operating Junction and

Storage Temperature Range

Standard Pack

Form Quantity

Max.

-30

± 20

-6.0

-4.8

d

-13

d

-10

-8.5

d

-52

2.1

1.3

0.02

-55 to + 150

Note

V

A

W

°C

Static @ TJ = 25°C (unless otherwise specified)

θ

Parameter Min. Typ. Max. Units

BV

DSS

ΔΒV

/ΔT

DSS

R

DS(on)

V

GS(th)

Δ

V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 9.3 ––– ––– S

Q

g

Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

J

Static Drain-to-Source On-Resistance

––– 30 37

––– 52 65

Gate Threshold Voltage -1.3 -1.8 -2.4 V

Gate Threshold Voltage Coefficient ––– -4.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

Total Gate Charge ––– 6.9 ––– nC

Total Gate Charge ––– 13 –––

Gate-to-Source Charge ––– 2.1 –––

Gate-to-Drain Charge ––– 3.9 –––

Gate Resistance ––– 17 –––

Turn-On Delay Time ––– 12 –––

Rise Time –––80–––

Turn-Off Delay Time ––– 13 –––

Fall Time ––– 25 –––

Input Capacitance ––– 580 –––

Output Capacitance ––– 125 –––

Reverse Transfer Capacitance ––– 79 –––

mΩ

μA

nA

nC

pF

IRFHS9301PbF

Conditions

VGS = 0V, ID = -250μA

Reference to 25°C, I

V

= -10V, ID = -7.8A

GS

VGS = -4.5V, ID = -6.2A

VDS = VGS, ID = -25μA

= -24V, VGS = 0V

V

DS

V

= -24V, VGS = 0V, TJ = 125°C

DS

V

= -20V

GS

V

= 20V

GS

V

= -10V, ID = -7.8A

DS

V

= -15V,VGS = -4.5V,ID = - 7.8A

DS

= -10V

V

GS

V

= -15V

DS

I

= -7.8A

D

Ω

V

= -15V, VGS = -4.5V

DD

ID = -7.8A

ns

Ω

= 2.0

R

G

See Figs. 19a & 19b

= 0V

V

GS

= -25V

V

DS

ƒ = 1.0KHz

= -1mA

D

e

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

c

––– –––

Diode Forward Voltage ––– ––– -1.2 V

Reverse Recovery Time ––– 30 45 ns

Reverse Recovery Charge ––– 110 170 nC

Thermal Resistance

Parameter Units

R

JC

R

JC

R

JA

R

JA

(Bottom)

(Top)

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (t<10s)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Current limited by package.  Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 R

is measured at TJ of approximately 90°C.

θ

g g

f

-8.5

-52

d

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

TJ = 25°C, IS = -7.8A, VGS = 0V

= 25°C, IF = -7.8A, VDD = -15V

T

J

di/dt = 280/μs

Typ.

Max.

–––

––– 90

–––

Conditions

e

13

60

42

D

G

S

e

°C/W

.

IRFHS9301PbF

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

-

0.1

-2.8V

60μs

≤

Tj = 25°C

PULSE WIDTH

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

(

t n e

r

10

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

-

0.1

TJ = 150°C

1

TJ = 25°C

V

= -15V

DS

60μs PULSE WIDTH

≤

1 2 3 4 5 6

-VGS, Gate-to-Source Voltage (V)

TOP -10V

BOTTOM -2.8V

VGS

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

-

-2.8V

≤60μs PULSE WIDTH

0.1

Tj = 150°C

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

e c n a

t s

i s e

R n O

)

e

d

c

r

e

u

z

i

l

o

a

S

-

m

o

r

t

-

o

n

N

i

(

a

r D

,

) n o

( S D

R

ID = -7.8A

V

= -10V

1.4

GS

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP -10V

BOTTOM -2.8V

VGS

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

Fig 3. Typical Transfer Characteristics

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

10

V

= 0V, f = 1 KHZ

GS

C

= C

C

iss

rss

oss

= C

+ Cgd, C

gs

gd

+ C

ds

C

gd

iss

oss

rss

SHORTED

ds

1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

14

ID= -7.8A

)

12

V

( e

g a

10

t

l o V

e

8

c

r u o S

-

6

o

t

e

t a

G

4

,

S G

V

-

2

VDS= -24V

VDS= -15V

VDS= -6V

0

0 2 4 6 8 1012141618

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

IRFHS9301PbF

100

) A

( t n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

D S

I

-

1.0

0.4 0.6 0.8 1.0

TJ = 150°C

TJ = 25°C

V

= 0V

GS

-VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

14

LIMITED BY PACKAGE

12

)

10

A

( t n e

r

8

u C n

i

6

a

r D ,

D

4

I

2

0

25 50 75 100 125 150

TC, Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

100

1000

) A

(

100

t n e

r

r u

C

10

e c

r u o S

o

t

1

n

i a

r D ,

0.1

D

I

-

Tc = 25°C Tj = 150°C Single Pulse

0.01

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

VDS, Drain-to-Source Voltage (V)

100μsec

DC

10msec

Fig 8. Maximum Safe Operating Area

2.0

) V

( e

g a

t

l o V

1.5

d

l o h s e

r h

t e

t a

G

1.0

,

) h

t

( S G

V

-

0.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -25uA

Fig 10. Threshold Voltage vs. Temperature

)

10

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.01

0.001

D = 0.50

0.20

1

0.1

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFHS9301PbF

)

100

Ω

m

( e

c n a

t s

i

80

s

e R n O e

c

r

60

u o S

o

t

n

i a

r

40

D ,

) n o

( S D

R

20

TJ = 25°C

ID = -7.8A

TJ = 125°C

0 5 10 15 20

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

600

500

400

) W

( r

300

e w

o P

200

)

100

Ω

(

m

e c n a

t s

i

80

s e

R n O e

c

r

60

u o S

o

t

n

i a

r

40

D ,

) n o

(

S D

R

20

Vgs = -4.5V

Vgs = -10V

0 5 10 15 20 25 30

-ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

100

0

D.U.T *

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-



R

G

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

* Reverse Polarity of D.U.T for P-Channel

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Time (sec)

Fig 14. Typical Power vs. Time



Driver Gate Drive

P.W.

D.U.T. ISDWaveform

Reverse Recovery

+

V

DD

+

-

Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

Period

Body Diode Forward

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

Current

di/dt

Diode Recovery

dv/dt

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs

IRFHS9301PbF

0

20K

1K

DUT

Fig 16a. Gate Charge Test Circuit

R

V

DS

V

GS

R

G

D

D.U.T.

Id

Vgs

Vds

L

VCC

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 16b. Gate Charge Waveform

t

d(on)tr

V

GS

10%

-

V

+

DD

t

d(off)tf

-V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 17a. Switching Time Test Circuit

90%

V

DS

Fig 17b. Switching Time Waveforms

PQFN Package Details

IRFHS9301PbF

PQFN Part Marking

9301

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PQFN Tape and Reel

IRFHS9301PbF

CORE

TAPE

Width

Table 2:

COVER

TOLERANCE

TAPE

(WIDTH)

+/- 0. 1 mm

5.4 mm

9.5 mm +/- 0.1 mm

Remark:

- Dimension ab ove are typical dimensions.

- Cover tape thickn ess is 0.048mm +/- 0.005mm.

- Surface resistivit y 10E5 < Rs <10 E9.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRFHS9301PbF

Revision History

5/21/2014

•

Updated qual level from "Consumer" to "Industrial" on page 1 & 9.

Qualificat ion infor mation

Qualific ation level

Moisture Sensitivity Level

RoHS c ompli ant Yes

†

Industrial

(per JEDEC JES D47F

PQFN 2mm x 2mm

††

†††

guidelines )

MS L 1

(per I PC/J E DE C J - S T D- 020D

†††

)

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Date Comment

•

5/12/2014

Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)

• Updated data sheet based on corporate template.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.