Datasheet IRFB4227PbF Datasheet

PD - 97035D

IRFB4227PbF

Features

l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l Low E

Rating to Reduce Power

PULSE

Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

l Low Q l High Repetitive Peak Current Capability for

for Fast Response

G

Reliable Operation

l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for

Improved Ruggedness

l Repetitive Avalanche Capability for Robustness

and Reliability

l Class-D Audio Amplifier 300W-500W

(Half-bridge)

V

max

DS

V

DS (Avalanche)

DS(ON)

typ. @ 10V

R

IRP max @ TC= 100°C

max

T

J

G

GDS

Gate Drain Source

Key Parameters

typ.

D

S

200 V

240 V

19.7

m

130 A

175 °C

D

G

TO-220AB

:

D

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E

rating. Additional features of this MOSFET are 175°C

PULSE

operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

S

Absolute Maximum Ratings

Parameter Units

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V

D

I

DM

IRP @ TC = 100°C

P

@TC = 25°C

D

P

@TC = 100°C

D

T

J

T

STG

Gate-to-Source Voltage V

Pulsed Drain Current

Repetitive Peak Current

Power Dissipation W

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

c

g

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

R

θ

CS

R

θ

JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient

f

Max.

±30

65

46

260

130

330

190

2.2

-40 to + 175

300

10lbxin (1.1Nxm)

––– 0.45

––– 62

A

Notes  through  are on page 8

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09/10/07

IRFB4227PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆Β

R

V

∆

I

DSS

I

GSS

g

Q

t

d(on)

t

r

t

d(off)

t

f

t

st

E

C

L

DSS

V

DS(on)

GS(th)

V

GS(th)

fs

g

gd

PULSE

iss

oss

rss

oss

D

S

DSS

eff.

/∆T

Drain-to-Source Breakdown Voltage 200 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 19.7 24

mΩ

Gate Threshold Voltage 3.0 ––– 5.0 V

Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 1.0 mA

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Forward Transconductance 49 ––– ––– S

Total Gate Charge ––– 70 98 nC

Gate-to-Drain Charge ––– 23 –––

Turn-On Delay Time ––– 33 ––– ns

Rise Time ––– 20 –––

Turn-Off Delay Time ––– 21 –––

Fall Time ––– 31 –––

Shoot Through Blocking Time 100 ––– ––– ns

Energy per Pulse µJ

––– 570 –––

––– 910 –––

Input Capacitance ––– 4600 –––

Output Capacitance ––– 460 ––– pF

Reverse Transfer Capacitance ––– 91 –––

Effective Output Capacitance ––– 360 –––

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

= 10V, ID = 46A

V

GS

VDS = VGS, ID = 250µA

= 200V, VGS = 0V

V

DS

V

= 200V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

= -20V

V

GS

V

= 25V, ID = 46A

DS

= 100V, ID = 46A, VGS = 10V

V

DD

V

= 100V

DD

= 46A

I

D

= 2.5

R

V

Ω

G

= 10V

GS

DD

e

= 160V, VGS = 15V, RG= 4.7

L = 220nH, C= 0.4µF, V

= 160V, RG= 4.7

V

DS

L = 220nH, C= 0.4µF, V

= 160V, RG= 4.7

V

DS

= 0V

V

GS

= 25V

V

DS

ƒ = 1.0MHz,

= 0V, VDS = 0V to 160V

V

GS

and center of die contact

= 1mA

D

e

GS

TJ = 25°C

Ω,

GS

TJ = 100°C

Ω,

e

Ω

= 15V

D

G

S

Avalanche Characteristics

Typ. Max.

––– 140

–––

33

240 –––

–––

39

mJ

V

A

E

AS

E

AR

V

DS(Avalanche)

I

AS

Parameter Units

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche Voltage

Avalanche Current

d

d c c

Diode Characteristics

Conditions

e

IS @ TC = 25°C

I

SM

V

SD

t

rr

Q

rr

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 65

(Body Diode) A

Pulsed Source Current ––– ––– 260

(Body Diode)

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 100 150 ns

Reverse Recovery Charge ––– 430 640 nC

c

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = 46A, VGS = 0V

= 25°C, IF = 46A, VDD = 50V

T

J

di/dt = 100A/µs

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e

IRFB4227PbF

VGS

10V

8.0V

100

10

TOP 15V

BOTTOM 7.0V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

≤ 60µs PULSE WIDTH Tj = 25°C

0.1 1 10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000.0

V

= 25V

)

Α

(

t n

100.0

e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

10.0

DS

≤ 60µs PULSE WIDTH

TJ = 175°C

1.0

0.1

3.0 4.0 5.0 6.0 7.0 8.0

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

7.0V

1000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 15V

BOTTOM 7.0V

100

10

1

0.1 1 10

VGS

10V

8.0V

60µs PULSE WIDTH

≤

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

4.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 46A

V

= 10V

GS

3.0

) d e z

i

l

2.0

a m

r o

N

(

1.0

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

7.0V

Fig 3. Typical Transfer Characteristics

1000

L = 220nH

900

C = 0.4µF 100°C

800

) J µ

( e

s

l u p r e p

y g

r e n E

Fig 5. Typical E

25°C

700

600

500

400

300

200

100

110 120 130 140 150 160 170

V

Drain-to -Source Voltage (V)

DS,

vs. Drain-to-Source Voltage

PULSE

Fig 4. Normalized On-Resistance vs. Temperature

1000

L = 220nH C = Variable 100°C

800

) J µ

( e

s

l u p r e p

y g

r e n E

25°C

600

400

200

0

130 140 150 160 170 180 190

ID, Peak Drain Current (A)

Fig 6. Typical E

vs. Drain Current

PULSE

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IRFB4227PbF

1400

L = 220nH

C= 0.4µF C= 0.3µF C= 0.2µF

0

25 50 75 100 125 150

Temperature (°C)

Fig 7. Typical E

vs.Temperature

PULSE

) J µ

( e

s

l u p r e p

y g

r e n E

1200

1000

800

600

400

200

1000.0

) A

( t

100.0

n e

r

r u

C n

i a

r

10.0

D e

s

r e v e

R ,

1.0

D S

I

0.1

TJ = 175°C

TJ = 25°C

V

= 0V

GS

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-to-Drain Voltage (V)

Fig 8. Typical Source-Drain Diode Forward Voltage

8000

6000

) F p

( e

c n a

t

i

4000

c a p a

C ,

C

2000

Ciss

Coss

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

+ Cgd, C

+ C

gd

SHORTED

ds

Crss

0

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

70

60

)

50

A

( t n e

r

40

u C n

i a

30

r D

,

D

20

I

10

0

25 50 75 100 125 150 175

TC , CaseTemperature (°C)

20

ID= 46A

) V

(

16

e g a

t

l o V

e

12

c

r u o S

o

t

8

e

t a

G ,

S

4

G

V

VDS= 160V

VDS= 100V

VDS= 40V

0

0 20 40 60 80 100 120

Q

Total Gate Charge (nC)

G

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

1000

) A

( t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

V

, Drain-to-Source Voltage (V)

DS

1µsec

10µsec

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Safe Operating Area

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IRFB4227PbF

τ

)

0.16

(

Ω

e c n a

t s

i s e

0.12

R n O e

c

r u

0.08

o S

o

t

n

i a

r

0.04

D ,

) n o

(

S D

0.00

R

5 6 7 8 9 10

ID = 46A

TJ = 125°C

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

5.0

) V

4.5

( e

g a

t

l

4.0

o V

d

l o

3.5

h s e

r h

t

3.0

e

t a

G

)

2.5

h

t

( S G

2.0

V

ID = 250µA

600

) J

m

( y

500

g

r e n E

e

400

h c n a

l a v

300

A e

s

l u P

200

e

l g n

i S

100

, S A

E

0

25 50 75 100 125 150 175

I

TOP

8.6A

14A

BOTTOM

39A

D

Starting TJ, Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Temperature

200

ton= 1µs Duty cycle = 0.25

)

160

A

( t n e

r

r u

120

C k

a e P

e

80

v

i

t

i

t e p e

R

40

Half Sine Wave Square Pulse

1.5

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 15. Threshold Voltage vs. Temperature

1

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.1

0.20

0.10

0.05

0.01

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

0

25 50 75 100 125 150 175

Fig 16. Typical Repetitive peak Current vs.

R

1

2

R

τ

1

Ci= τi/Ri

1

τ

2

τ

2

τ

J

τ

J

τ

1

t1 , Rectangular Pulse Duration (sec)

Case Temperature (°C)

Case temperature

R

3

R

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.08698 0.000074

τ

3

0.2112 0.001316

τ

3

0.1506 0.009395

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFB4227PbF

A





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

V

20V

GS

Fig 19a. Unclamped Inductive Test Circuit

V

GS

R

G

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 19b. Unclamped Inductive Waveforms

R

V

DS

D

D.U.T.

+

V

DD

-

V

DS

90%

10%

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

V

GS

t

d(on)

t

r

t

d(off)

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms

Vds

L

0

DUT

1K

VCC

Vgs(th)

t

f

Id

Vgs

Qgs1

Qgs2 Qgd Qgodr

Fig 21a. Gate Charge Test Circuit

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Fig 21b. Gate Charge Waveform

IRFB4227PbF

Fig 21a. t

and E

st

PULSE

Fig 21c. E

Test Circuit

Test Waveforms

PULSE

Fig 21b. tst Test Waveforms

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IRFB4227PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

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TO-220AB packages are not recommended for Surface Mount Application.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 0.18mH, RG = 25Ω, I

J

AS

= 39A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 R

is measured at T

θ

of approximately 90°C.

J

 Half sine wave with duty cycle = 0.25, ton=1µsec.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2007

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