Datasheet IRFP2907ZPbF Datasheet

AUTOMOTIVE MOSFET

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free

IRFP2907ZPbF

HEXFET® Power MOSFET

D

G

R

DS(on)

V

DSS

= 75V

= 4.5mΩ

PD - 95480



Description

Specifically designed for Automotive applications, this HEXFET processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

®

Power MOSFET utilizes the latest

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

I

@ TC = 100°C

D

@ TC = 25°C

I

D

I

DM

PD @TC = 25°C

V

GS

E

AS

(tested)

E

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

c

@ 10V (Silicon Limited)

GS

@ 10V (See Fig. 9)

GS

@ 10V

GS

h

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junct ion-to-Case

Case-to-Sink, Flat, Greased Surface

Junct ion-to-Ambient

j

(Package Limited)

i

j

S

d

See Fig.12a,12b,15,16

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

––– 0.49 °C/W

0.24 –––

––– 40

Max.

170

120

90

680

310

2.0

± 20

520

690

ID = 90A

TO-247AC

A

W

W/°C

V

mJ

A

mJ

°C

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

7/16/04

IRFP2907ZPbF

/

g

µ

g

(

)

µ

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆Β

V

DSS

R

DS(on)

V

GS(th)

fs Forward Transconductance 180 ––– ––– S

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage75––––––V

∆

T

Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 3.5 4.5 Gate Threshold Voltage2.0–––4.0V

Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leaka

e ––– ––– -200 Total Gate Charge ––– 180 270 Gate-to-Source Charge ––– 46 ––– nC Gate-to-Drain ("Miller") Charge ––– 65 ––– Turn-On Delay Time –––19–––ns Rise Time ––– 140 ––– Turn-Off Delay Time –––97––– Fall Time ––– 100 ––– Internal Drain Inductance ––– 5.0 ––– nH Between lead,

Internal Source Inductance ––– 13 ––– from package

Input Capacitance ––– 7500 ––– pF Output Capacitance ––– 970 ––– Reverse Transfer Capacitance ––– 510 ––– Output Capacitance ––– 3640 ––– Output Capacitance ––– 650 ––– Effective Output Capacitance ––– 1020 –––

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 90

(Body Diode) A Pulsed Source Current ––– ––– 680

Body Diode Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– 59 89 nC Forward Turn-On Time

c

––– ––– 1.3 V –––4161ns

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I V

mΩ

= 10V, ID = 90A

GS

VDS = VGS, ID = 250µA

= 25V, ID = 90A

V

DS

V

A

= 75V, VGS = 0V

DS

V

= 75V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 90A

D

V

= 60V

DS

f

= 10V

V

GS

V

= 38V

DD

= 90A

I

D

RG = 2.5Ω

= 10V

f

V

GS

6mm (0.25in.)

and center of die contact V

= 0V

GS

= 25V

V

DS

ƒ = 1.0MHz, See Fig. 5 V

= 0V, VDS = 1.0V, ƒ = 1.0MHz

GS

= 0V, VDS = 60V, ƒ = 1.0MHz

V

GS

VGS = 0V, VDS = 0V to 60V

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 90A, VGS = 0V

= 25°C, IF = 90A, VDD = 38V

T

J

di/dt = 100A/

f

s

= 1mA

D

f

G

D

G

S

D

S

f

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

L=0.13mH, RG = 25Ω, I

, starting TJ = 25°C,

Jmax

= 90A, VGS =10V.

AS

Part not recommended for use above this value.

 I

≤ 90A, di/dt ≤ 340A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

,

 C

eff. is a fixed capacitance that gives the same

oss

charging time as C

 Limited by T

Jmax

oss

while V

is rising from 0 to 80% V

DS

DSS

, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 R

is measured at T

θ

of approximately 90°C.

J

.

2 www.irf.com

IRFP2907ZPbF

10000

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

60µs PULSE WIDTH

≤

Tj = 25°C

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 15V

1000

BOTTOM 4.5V

100

10

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

60µs PULSE WIDTH

≤

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

TOP 15V

BOTTOM 4.5V

100

D

Tj = 175°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

)

Α

(

100

t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

1

TJ = 175°C

TJ = 25°C

V

DS

≤

60µs PULSE WIDTH

= 25V

0.1 2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

200

) S

( e

c

150

n a

t c u d n o c s

100

n a

r T

d

r a

w

r o

50

F ,

s

f

G

TJ = 25°C

TJ = 175°C

V

= 10V

DS

380µs PULSE WIDTH

0

0 25 50 75 100 125 150

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRFP2907ZPbF

100000

) F

10000

p

( e c n a

t

i c a p a

C ,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

12.0 ID= 90A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

0.0 0 50 100 150 200

VDS= 60V

VDS= 38V

VDS= 15V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

( t n e

r

100

u C n

i a

r D e

s

r e v

10

e R

,

D S

I

1

TJ = 175°C

TJ = 25°C

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

10000

OPERATION IN THIS AREA

) A

1000

( t n e

r

r u

C

100

e c

r u o S

-

10

o

t

n

i a

r D ,

1

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRFP2907ZPbF

τ

175

150

)

125

A

( t n e

r

100

r u

C n

i

75

a

r D ,

D

50

I

Limited By Package

25

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 90A

V

= 10V

GS

2.0

) d e z

i

l

1.5

a m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.1224 0.000360

τ

3

0.1238 0.001463

τ

3

0.2433 0.021388

Notes:

1. Duty Factor D = t1/t2

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.01

0.001

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFP2907ZPbF

A

15V

L

D.U.T

I

AS

Ω

0.01

t

p

R

V

20V

V

DS

G

GS

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

DRIVER

+

V

-

DD

2500

) J

m

( y

g

r

2000

e n E

e h c

1500

n a

l a v A

e s

1000

l u P

e

l g n

i

500

S ,

S A

E

0

25 50 75 100 125 150 175

TOP 16A

BOTTOM90A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

I

D

25A

Q

G

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

0

1K

Fig 13b. Gate Charge Test Circuit

Q

GD

Charge

DUT

4.0

) V

(

3.5

e g a

t

l o

3.0

V d

l o h s

2.5

e

r h

t e

t a

2.0

G

) h

t

( S

1.5

G

L

VCC

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

IRFP2907ZPbF

) A

(

100

t n e

r

r u

C e

h c n a

l

10

a v

A

1

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

600

TOP Single Pulse

500

) J

m

( y

g

400

r e n E

e h

300

c n a

l a v

200

A ,

R A

E

100

0

25 50 75 100 125 150 175

BOTTOM 1% Duty Cycle ID = 90A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

vs. Temperature

www.irf.com 7

is

IRFP2907ZPbF





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

IRFP2907ZPbF

TO-247AC Part Marking Information

EXAMPLE:

THIS IS AN IRFPE 30 WITH ASSE MBLY LOT CODE 5657

ASS EMB LED ON WW 35, 2000 IN THE AS SE MBL Y LINE "H"

Note: "P" in assembly line positio n indicates "L ead-Free"

TO-247AC package is not recommended for Surface Mount Application.

This product has been designed and qualified for the Automotive [Q101] market.

INTER NATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

IRFPE30

56 57

035H

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE EK 35 LINE H

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/04

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