Datasheet IRFL024ZPBF Datasheet

PD - 95312A

IRFL024ZPbF

HEXFET® Power MOSFET

Features

l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Absolute Maximum Ratings

Parameter Units

ID @ TA = 25°C

ID @ TA = 70°C

I

DM

PD @TA = 25°C

V

GS

E

AS (Thermally limited)

E

(Tested )

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage V

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range °C

c i j

c

@ 10V (Silicon Limited)

GS

@ 10V

GS

i

d

g

i

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JA

R

θ

JA

Junction-to-Ambient (PCB mount, steady state)

D

V

= 55V

DSS

G

R

S

DS(on)

ID = 5.1A

= 57.5mΩ

SOT-223

Max.

i

h

See Fig.12a, 12b, 15, 16

i j

––– 45

––– 120

5.1

4.1

41

2.8

1.0

0.02

± 20

13

32

-55 to + 150

A

W

W/°C

mJ

A

mJ

°C/W

www.irf.com 1

09/16/10

IRFL024ZPbF

Electrical Ch

@ T

= 25°C (unl

ified)

∆

aracteristics

J

Parameter Min. Typ. Max. Units

V

(BR)DSS

V

(BR)DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 6.2 ––– ––– S

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff.

oss

Drain-to-Source Breakdown Voltage 55 ––– ––– V

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 46.2 57.5

Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Total Gate Charge ––– 9.1 14

Gate-to-Source Charge ––– 1.9 ––– nC

Gate-to-Drain ("Miller") Charge ––– 3.9 –––

Turn-On Delay Time ––– 7.8 –––

Rise Time ––– 21 ––– ns

Turn-Off Delay Time ––– 30 –––

Fall Time ––– 23 –––

Input Capacitance ––– 340 –––

Output Capacitance ––– 68 –––

Reverse Transfer Capacitance ––– 39 ––– pF

Output Capacitance ––– 210 –––

Output Capacitance ––– 55 –––

Effective Output Capacitance ––– 93 –––

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Continuous Source Current ––– ––– 5.1

(Body Diode) A

Pulsed Source Current ––– ––– 41

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 15 23 ns

Reverse Recovery Charge ––– 9.8 15 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 2.8mH

Jmax

= 3.1A, VGS =10V.

AS

Part not recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same

oss

charging time as C

V

.

DSS

oss

while V

is rising from 0 to 80%

DS

2 www.irf.com

ess otherwise spec

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

mΩ

––– ––– 250

Limited by T

Jmax

repetitive avalanche performance.

This value determined from sample failure population.

100% tested to this value in production.

When mounted on 1 inch square copper board. When mounted on FR-4 board using minimum

recommended footprint.

= 10V, ID = 3.1A

V

GS

VDS = VGS, ID = 250µA

V

= 25V, ID = 3.1A

DS

V

= 55V, VGS = 0V

DS

= 55V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

I

= 3.1A

D

= 44V

V

DS

VGS = 10V

e

VDD = 28V

= 3.1A

I

D

= 53 Ω

R

G

VGS = 10V

e

VGS = 0V

= 25V

V

DS

ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

= 0V, VDS = 44V, ƒ = 1.0MHz

V

GS

= 0V, VDS = 0V to 44V

V

GS

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

= 25°C, IS = 3.1A, VGS = 0V

J

TJ = 25°C, IF = 3.1A, VDD = 28V

di/dt = 100A/µs

, see Fig.12a, 12b, 15, 16 for typical

e

= 1mA

D

e

G

f

D

S

e

IRFL024ZPbF

100

TOP 15V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 4.5V

10

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V 30µs PULSE WIDTH

1

Tj = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

100

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 15V

BOTTOM 4.5V

1

30µs PULSE WIDTH

0.1

Tj = 150°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

12

)

Α

(

t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

TJ = 25°C

TJ = 150°C

V

= 25V

DS

30µs PULSE WIDTH

1.0 4 5 6 7 8 9 10

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

) S

(

10

e c n a

t c

8

u d n o c s

6

n a

r T

d

r

4

a w

r o F ,

s

2

f

G

0

024681012

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

TJ = 25°C

TJ = 150°C

V

DS

= 10V

vs. Drain Current

www.irf.com 3

IRFL024ZPbF

10000

) F

1000

p

( e c n a

t

i c a p a

C ,

100

C

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

100

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

12.0 ID= 3.1A

10.0

8.0

6.0

4.0

S G

2.0

0.0 0246810

VDS= 44V

VDS= 28V

VDS= 11V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA

) A

( t n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

D S

I

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

TJ = 150°C

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

TJ = 25°C

V

GS

= 0V

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

, I

TA = 25°C

D

Tj = 150°C Single Pulse

0.1 1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Forward Voltage

4 www.irf.com

IRFL024ZPbF

τ

6

5

) A

(

4

t n e

r

r u

C

3

n

i a

r D

2

,

D

I

1

0

25 50 75 100 125 150

TA ,Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Ambient Temperature

100

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 3.1A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

0.1

D = 0.50

10

0.20

0.10

0.05

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

τ

3

5.0477 0.000463

19.9479 0.636160

τ

3

20.0169 21.10000

Notes:

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

0.02

0.01

τ

J

τ

SINGLE PULSE ( THERMAL RESPONSE )

)

A J h

t

Z (

e s n o p s e

R l a

m

r e h T

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFL024ZPbF

A

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

60

) J

m

( y

50

g

r e n E

e

40

h c n a

l a v

30

A e

s

l u P

20

e

l g n

i S

10

,

S A

E

0

25 50 75 100 125 150

TOP 0.77A

BOTTOM3.1A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

4.0

I

D

0.89A

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

L

0

1K

DUT

VCC

( e

g

3.5

a

t

l o V

d

l o h s

3.0

e

r h

t e

t a

G

) h

2.5

t

( S G

V

2.0

-75 -50 -25 0 25 50 75 100 125 150

ID = 250µA

TJ , Temperature ( °C )

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

IRFL024ZPbF

10

Duty Cycle = Single Pulse

) A

(

1

t n e

r

r u

C e

h c n a

l

0.1

a v

A

0.01

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

14

TOP Single Pulse

12

) J

m

(

10

y g

r e n E

8

e h c n

6

a

l a v A ,

4

R A

E

2

0

25 50 75 100 125 150

BOTTOM 1% Duty Cycle ID = 3.1A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRFL024ZPbF





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

IRFL024ZPbF

SOT-223 (TO-261AA) Part Marking Information

HEXFET PRODUCT MARKING

THIS IS AN IRF L014

INTERNATIONAL

RECTIF IER

LOGO 314P

FL014

TOP

PAR T NUMBE R

DAT E CODE (YYWW) YY = YEAR WW = WEEK P = DE S IGNAT E S L E AD- F RE E

PRODUCT (OPT IONAL)

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9

LOT CODE

A = ASSEMBLY SITE

CODE

AXXXX

BOT TOM

IRFL024ZPbF

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)

2.05 (.080)

330.00 (13.000) MAX.

1.95 (.077)

12.10 (.475)

11.90 (.469)

13.20 (.519)

12.80 (.504)

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA- 541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

3.90 (.154)

1.85 (.072)

1.65 (.065)

7.55 (.297)

7.45 (.294)

1.60 (.062)

1.50 (.059) TYP.

7.10 (.279)

6.90 (.272)

15.40 (.607)

11.90 (.469)

4

7.60 (.299)

7.40 (.292)

0.35 (.013)

0.25 (.010)

16.30 (.641)

15.70 (.619)

2.30 (.090)

2.10 (.083)

50.00 (1.969) MIN.

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTOR TION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

3

18.40 (.724) MAX.

4

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2010

10 www.irf.com