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S
D
G
SOT-223
PD - 95339
IRFL024NPbF
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
HEXFET® Power MOSFET
V
= 55V
DSS
R
DS(on)
= 0.075Ω
ID = 2.8A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.0
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.3
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 11.2
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 214 mJ
Avalanche Current 2.8 A
Repetitive Avalanche Energy* 0.1 mJ
Junction and Storage Temperature Range -55 to + 150 °C
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
R
θJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Junction-to-Amb. (PCB Mount, steady state)* 90 120
Junction-to-Amb. (PCB Mount, steady state)** 50 60
°C/W
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IRFL024NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 2.8A
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.68A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 18.3 ID = 1.68A
Gate-to-Source Charge ––– ––– 3.0 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7.7 VGS = 10V, See Fig. 6 and 9
Turn-On Delay Time ––– 8.1 ––– VDD = 28V
Rise Time ––– 13.4 ––– ID = 1.68A
Turn-Off Delay Time ––– 22.2 ––– RG = 24Ω
ns
Fall Time ––– 17.7 ––– RD = 17Ω, See Fig. 10
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 145 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
2.8
A
11.2
Diode Forward Voltage ––– – –– 1.0 V TJ = 25°C, IS =1.68A, VGS = 0V
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A
Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 54.7 mH
J
= 2.8A. (See Figure 12)
AS
I
≤ 1.68A, di/dt ≤ 155A/µs, V
SD
DD
≤ V
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
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IRFL024NPbF
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Sou rce Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Sou rce Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
2.0
I =
D
2.8A
1.5
10
°
T = 150 C
J
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
1
4.5 5.0 5.5 6.0 6.5
°
T = 25 C
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFL024NPbF
0
700
600
500
400
300
C, Capacitance (pF)
200
100
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Sou rce Voltage (V)
DS
f = 1MHz
C
+ C
C SHO RTED
C
C
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
1.68 A
D
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20
Q , Total Gate Charge (nC)
G
V = 44V
DS
V = 27V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10
1
°
T = 150 C
SD
I , Reverse Drain Current (A)
J
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
V
+
-
S
Current Regulator
V
9
1
V
10V
IRFL024NPbF
R
D.U.T.
D
V
DD
V
Q
G
Q
GS
Q
GD
R
DS
V
GS
G
G
10V
Pulse Width ≤ 1 µs
Charge
Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
D
-
Fig 10a. Switching Time Test Circuit
DS
0%
0%
V
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 9b. Gate Charge Test Circuit
1000
100
thJC
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFL024NPbF
I
A
15V
V
DS
R
G
10V
t
L
D.U.T
I
AS
Ω
0.01
p
DRIVER
+
-
V
DD
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
500
TOP
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
1.3A
2.2A
2.8A
°
AS
Fig 12b. Unclamped Inductive Waveforms
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Page 7
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
IRFL024NPbF
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
INTERNATIONAL
RECTIFIE R
LOGO 314P
FL014
TOP
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DE SIGNAT ES L E AD-F R E E
PRODUCT (OPTIONAL)
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LOT CODE
A = AS SE MBL Y S IT E
CODE
AXXXX
BOTTOM
Page 8
IRFL024NPbF
)
)
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
TR
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
330.00
(13.000)
MAX.
1.95 (.077)
12.10 (.475)
11.90 (.469)
13.20 (.519)
12.80 (.504)
1.85 (.072)
1.65 (.065)2.05 (.080)
7.55 (.297)
7.45 (.294)
1.60 (.062)
1.50 (.059)
TYP.
7.10 (.279)
6.90 (.272)
15.40 (.607)
11.90 (.469)
4
7.60 (.299)
7.40 (.292)
0.35 (.013)
0.25 (.010)
16.30 (.641
15.70 (.619
2.30 (.090)
2.10 (.083)
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
3
18.40 (.724)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
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