Datasheet IRF7455PBF Datasheet

SMPS MOSFET

A

Compatible with Existing Surface Mount Techniques

Standard Pack

IRF7455PbF-1

HEXFET® Power MOSFET

V

DS

R

DS(on) m ax

(@VGS = 10V)

Q

g (typical)

I

D

(@TA = 25°C)

Applications

l High Frequency DC-DC Converters with Synchronous Rectification

Features Benefits

Industry-standard pinout SO-8 Package

RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability

30 V

0.0075

37 nC

15 A

1

Ω

S

2

S

3

S

4

Top View

⇒

A

8

D

7

D

6

D

5

DG

SO-8

Multi-Vendor Compatibility Easier Manufacturing

Base Part Number

Package Type

IRF7455PbF-1 SO-8

Form Quantity

Tube/Bulk 95 IRF7455PbF-1

Tape and Reel 4000 IRF7455TRPbF-1

Orderable Part Number

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A I

DM

PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W

Linear Derating Factor 0.02 W/°C

TJ , T

STG

Drain-Source Voltage 30 V

Gate-to-Source Voltage ± 12 V

Pulsed Drain Current 120

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Typical SMPS Topologies

l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers

Notes  through  are on page 8

Static @ TJ = 25°C (unless otherwise specified)

(BR)DSS

Δ

(BR)DSS

J

GS(th )

DSS

GSS

g

gs

gd

d(on)

r

d(off)

f

iss

oss

rss

AS

AR

S

SM

SD

rr

DS

GS

DS

GS

G

Ω

D

GS

DS

DD

J

GS

D

GS

Paramete r Min. Typ. Max. Units

V

/ΔT

Drain-to-Source Breakdown Voltage 30 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C

––– 0.0060 0.0075

R

DS(on)

Static Drain-to-Source On-Resistance

––– 0.0069 0.009

––– 0.010 0.020 V I

Gate Threshold Voltage 0.6 ––– 2.0 V Drain-to-Source Leakage Current ––– ––– 20

––– ––– 10 0 I

Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. T yp. Max. Units

gfs Forward Transconductance 44 ––– ––– S Q Q Q t t t t C C C

Total Gate Charge ––– 37 56 ID = 15A Gate-to-Source Charge ––– 8.9 13 VDS = 24V Gate-to-Drain("Miller") Charge ––– 13 20 VGS = 5.0V Turn-On Delay Time ––– 17 ––– Rise Time ––– 18 ––– Turn-Off Delay Time ––– 51 ––– Fall Time ––– 44 ––– Input Capacitance ––– 3480 ––– Output Capacitance ––– 870 ––– Reverse Transfer Capacitance ––– 100 –––

IRF7455PbF-1

Conditions

V

= 0V, ID = 250μA

Reference to 25°C, I

= 10V, ID = 15A

V

Ω

= 4.5V, ID = 12A

V V

= 2.8V, ID = 3.5A

V

= VGS, ID = 250μA

V

= 24V, VGS = 0V

μA

VDS = 24V, VGS = 0V, TJ = 125°C V

= 20V

nA

V

= -20V

Conditions

VDS = 10V, ID = 15A

nC

e

= 15V

V I

= 1.0A

ns

=6.0

R

pF

VGS = 4.5V

V V ƒ = 1.0MHz

e

= 0V = 25V

= 1.0mA

f

Avalanche Characteristics

Parameter Units

E I E

Single Pulse Avalanche Energy Avalanche Current

c

Repetitive Avalanche Current

d

c

Typ.

––– ––– –––

Max.

200

15

0.25

Diode Characteristics

Parameter Min. T yp. Max. Units

I

V t Q

Continuous Source Current (Body Diode) Pulsed Source C urrent (Body Diode)

c

––– ––– 2.5

––– ––– 120

Diode Forward Voltage ––– ––– 1.2 V Reverse Recovery Time ––– 64 96 ns Reverse Recovery Charge ––– 99 150 nC

MOSFET symbol sh owi ng th e

A

integral reverse p-n junction diode. TJ = 25°C, IS = 2.5A, VGS = 0V

= 25°C, IF = 2.5A

T di/dt = 100A/μs

Conditions

G

e

mJ

A

mJ

D

S

e

IRF7455PbF-1

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7455PbF-1

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF7455PbF-1

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7455PbF-1

A

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

.3μF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 13. On-Resistance Vs. Gate Voltage

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

15V

V

(BR)D SS

t

p

I

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

SO-8 Package Outline(Mosfet & Fetky)

]

Dimensions are shown in milimeters (inches)

D B

A

87

6

E

e

6X

5

65

4312

e1

H

0.25 [.010] A

A

C

y

DIM

A

A1

b

c .0075 .0098 0.19 0.25

D

E

e

e1

H

K

L

y

K x 45°

IRF7455PbF-1

.0688

.0098

.020

.1968

.1574

.2440

.0196

.050

8°

MILLIMETERSINCHES

MIN MAX

1.75

1.35

0.25

0.10

0.51

0.33

5.00

4.80

4.00

3.80

1.27 BASI C

6.20

5.80

0.50

0.25

1.27

0.40

0°

8°

MI N MAX

.0532

.0040

.013

.189

.1497

.050 BASIC

.025 BASIC 0.635 BAS IC

.2284

.0099

.016

0°

8X b

0.25 [.010] C A B

NOTE S:

1. DIMENS IONING & T OL ERANCING P ER ASME Y14.5M-1994.

2. CONT ROLLING DIMENSION: MILLIME TER

3. DIME NS IONS ARE S HOWN IN MILL IMETE RS [INCHES ].

4 . OU T L INE CON FOR MS T O JE DE C OU T LI NE MS -0 12AA.

5 DIMENS ION DOES NOT I NCL UDE MOLD P ROT RUS IONS . MOLD PR OT RU SI ONS NOT TO E XCEED 0.15 [ .006].

6 DIMENS ION DOES NOT I NCL UDE MOLD P ROT RUS IONS . MOLD PR OT RU SI ONS NOT TO E XCEED 0.25 [ .010].

7 DIMENS ION IS THE LE NGT H OF L EAD FOR S OLDE RING TO A SUB ST RATE .

A1

0.10 [.004]

SO-8 Part Marking Information

EXAMPLE: THIS IS AN IRF7101 (MOS F ET )

INTERNAT IONAL

RECTIF IER

LOGO

6.46 [.255]

3X 1.27 [.050]

F 7101

XXXX

8X L

7

FOOTPRINT

8X c

8X 0.72 [.028]

8X 1.78 [.070

DATE CODE (YWW) P = DISGNATES LEAD - FREE

PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YE AR WW = WE E K A = AS S E MB L Y S I T E CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

SO-8 Tape and Reel

MS L 1

(per JE DE C

J-S T D-020D

)

RoHS c o mplia nt

Yes

Qualificat ion information

Industrial

TERMINAL NU MBER 1

12.3 ( .484 )

11.7 ( .461 )

IRF7455PbF-1

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTRO LLING DIMEN SION : MILLI METER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

NOTES :

1. CONTROL LING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( . 566 )

12.40 ( . 488 )

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

†

Qualific ation level

Moisture Sensitivity Level SO-8

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release

(per JEDEC JESD47F†† guidelines)

††

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 1.8mH, RG = 25Ω, I

J

AS

= 15A.

 Pulse width ≤ 300μs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board, t<10 sec

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/