Datasheet IRF640NSPBF Datasheet

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.

G

TO-220AB

IRF640NPbF

PD - 95046A

IRF640NPbF

IRF640NSPbF

IRF640NLPbF

HEXFET® Power MOSFET

D

S

IRF640NSPbF

D2Pak

V

R

DS(on)

DSS

= 200V

= 0.15Ω

ID = 18A

TO-262

IRF640NLPbF

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A I

DM

PD @TC = 25°C Power Dissipation 150 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  8.1 V/ns T

J

T

STG

Pulsed Drain Current  72

Linear Derating Factor 1.0 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 247 mJ Avalanche Current 18 A Repetitive Avalanche Energy 15 mJ

Operating Junction and -55 to +175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

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07/23/10

IRF640N/S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.15 Ω VGS = 10V, ID = 11A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 6.8 ––– ––– S VDS = 50V, ID = 11A 

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 200V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 67 ID = 11A Gate-to-Source Charge ––– ––– 11 nC VDS = 160V Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 10 ––– VDD = 100V Rise Time ––– 19 ––– ID = 11A Turn-Off Delay Time ––– 23 ––– RG = 2.5Ω

ns

Fall Time ––– 5.5 ––– RD = 9.0Ω, See Fig. 10 

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

4.5

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 1160 ––– VGS = 0V Output Capacitance ––– 185 ––– VDS = 25V Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

18

72

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V  Reverse Recovery Time ––– 167 251 ns TJ = 25°C, IF = 11A Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 1.0 Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W Junction-to-Ambient ––– 62 Junction-to-Ambient (PCB mount) ––– 40

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D

S

IRF640N/S/LPbF

100

10

1

0.1

D

I , Drain-to-Source Current (A)

0.01

0.1 1 10 100

100

10

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 175 C

J

4.5V

°

100

10

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 175 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.5

3.0

2.5

2.0

I =

D

18A

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

V = 50V

DS

0.1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF640N/S/LPbF

2500

2000

) F p

( e

1500

c n a

t

i c a p a

1000

C ,

C

500

Ciss

Coss

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

oss

= C

gd

ds

C

+ Cgd, C

+ C

gd

ds

Crss

0

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

1000

20

I =

11A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

OPERATION IN THIS AREA LIMITED

V = 160V V = 100V V = 40V

BY R

DS DS DS

DS(on)

T = 175 C

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig 7. Typical Source-Drain Diode

°

J

°

T = 25 C

J

V = 0 V

V ,Source-to-Drain Voltage (V)

SD

Forward Voltage

GS

100

10

D

I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

C

T T= 175 C Single Pulse

0.1

0.1 1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us

100us

1ms

10ms

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20

16

12

20

16

12

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Duty Factor ≤ 0.1 %

IRF640N/S/LPbF

R

D

D.U.T.

+

V

DD

-

8

D

I , Drain Current (A)

D

I , Drain Current (A)

4

0

25 50 75 100 125 150 175

0

25 50 75 100 125 150 175

Fig 9. Maximum Drain Current Vs.

10

T , Case Temperature ( C)

C

T , Case Temperature ( C)

C

Case Temperature

°

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

10% V

V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

t

d(off)tf

thJC

1

D = 0.50

0.20

P

1 2

DM

t

1

0.10

0.1

0.05

Thermal Response(Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Note s:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJ C C

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF640N/S/LPbF

A

15V

DRIVER

R

G

20V

V

DS

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

600

TOP

500

400

+

V

DD

-

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

D

4.4A

7.6A 11A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

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+

V

DS

-

IRF640N/S/LPbF

Peak Diode Recovery dv/dt Test Circuit



D.U.T

+



-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period



P. W .

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRF640N/S/LPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE : T HIS IS AN IR F1010

Note: "P" in assembly line position

LOT CODE 1789 ASS EMBL ED ON WW 19, 2000 IN THE ASSEMBLY LINE "C"

indi cat es "L ead - F ree"

INTE RNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

TO-220AB package is not recommended for Surface Mount Application

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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PART NUMBER

DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C

2

Pak (TO-263AB) Package Outline

D

Dimensions are shown in millimeters (inches)

IRF640N/S/LPbF

D2Pak (TO-263AB) Part Marking Information

TH IS IS AN IRF 530S WIT H LOT CODE 8024

ASS EMBLE D ON WW 02, 2000 IN THE AS SEMBLY LINE "L"

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

F530S

OR

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

F530S

PART NUMBER

DATE CODE P = DES IGNATE S LEAD - FRE E

YEAR 0 = 2000 WE EK 02 A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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PART NUMBER

DATE CODE YEAR 0 = 2000 WE EK 02 LINE L

PRODUCT (OPTIONAL)

IRF640N/S/LPbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

TH IS IS AN IR L3103L

EXAMPLE:

LOT CODE 1789 ASS E MB LE D ON WW 19, 1997 IN T HE AS SEMBLY LINE "C"

Note: "P" in assembly line posi tion indicates "L ead- Free"

INTE RNATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

OR

INTE RNATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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PART NUMBER

DATE CODE YEAR 7 = 1997 WE EK 19 LINE C

PART NUMBER

DATE CODE P = DESIGNATE S LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 7 = 1997 WE EK 19 A = AS SE MB LY S IT E CODE

D2Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DI RECTION

TRL

FEED D IRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

IRF640N/S/LPbF

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORM S TO EIA-418.

2. CONT ROLLING DIMEN SION: MILLIME TER.

3. DIMENSION MEASURE D @ HUB.

4. INCLUDES FLANG E DISTORTION @ OUTER EDG E.

27.40 (1 .079)

23.90 (. 941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2. 362) MIN.

30.40 (1.197) MAX.

4

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 This is applied to D

= 25°C, L = 4.2mH

J

= 11A.

AS

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is only applied to TO-220AB package

For recommended footprint and soldering techniques refer to application note #AN-994.

 I

≤ 11A, di/dt ≤ 344A/µs, V

SD

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.07/2010

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