Datasheet IRFB4229PbF Datasheet

f

Features

l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l Low E

Rating to Reduce Power

PULSE

Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

l Low Q l High Repetitive Peak Current Capability for

for Fast Response

G

Reliable Operation

l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for

Improved Ruggedness

l Repetitive Avalanche Capability for Robustness

and Reliability

l Class-D Audio Amplifier 300W-500W

(Half-bridge)

IRFB4229PbF

Key Parameters

V

min

DS

V

DS (Avalanche)

R

DS(ON)

typ.

typ. @ 10V

IRP max @ TC= 100°C

max

T

J

D

G

S

GDS

Gate Drain Source

250 V

300 V

175 °C

PD - 97078A

38

m

91 A

D

TO-220AB

:

S

D

G

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E

rating. Additional features of this MOSFET are 175°C

PULSE

operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Units

V

GS

@ TC = 25°C Continuous Drain Current, VGS @ 10V

I

D

@ TC = 100°C Continuous Drain Current, VGS @ 10V

I

D

I

DM

IRP @ TC = 100°C

PD @TC = 25°C

@TC = 100°C

P

D

T

J

T

STG

Gate-to-Source Voltage V

Pulsed Drain Current

Repetitive Peak Current

Power Dissipation W

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

c

g

Max.

±30

46

33

180

91

330

190

2.2

-40 to + 175

300

x

in (1.1Nxm)

10lb

A

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

R

θ

CS

R

θ

JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient

f

––– 0.45

––– 62

Notes  through  are on page 8

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09/10/07

IRFB4229PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆Β

R

V

∆V I

DSS

I

GSS

g

Q

t

d(on)

t

r

t

d(off)

t

f

t

st

E

C

L

DSS

V

DS(on)

GS(th)

fs

g

gd

PULSE

iss

oss

rss

oss

D

S

DSS

eff.

/∆T

Drain-to-Source Breakdown Voltage 250 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 38 46

mΩ Gate Threshold Voltage 3.0 ––– 5.0 V

Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 1.0 mA

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Forward Transconductance 83 ––– ––– S

Total Gate Charge ––– 72 110 nC

Gate-to-Drain Charge ––– 26 –––

Turn-On Delay Time ––– 18 –––

Rise Time ––– 31 ––– ns

Turn-Off Delay Time ––– 30 –––

Fall Time ––– 21 –––

Shoot Through Blocking Time 100 ––– ––– ns

Energy per Pulse µJ

––– 790 –––

––– 1390 –––

Input Capacitance ––– 4560 –––

Output Capacitance ––– 390 ––– pF

Reverse Transfer Capacitance ––– 100 –––

Effective Output Capacitance ––– 290 –––

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

= 10V, ID = 26A

V

GS

V

= VGS, ID = 250µA

DS

= 250V, VGS = 0V

V

DS

V

= 250V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

V

= 25V, ID = 26A

DS

= 125V, ID = 26A, VGS = 10V

V

DD

= 125V, VGS = 10V

V

DD

ID = 26A

= 2.4Ω

R

G

See Fig. 22 V

= 200V, VGS = 15V, RG= 4.7Ω

DD

L = 220nH, C= 0.3µF, V

= 200V, RG= 4.7Ω, TJ = 25°C

V

DS

L = 220nH, C= 0.3µF, V

= 200V, RG= 4.7Ω, TJ = 100°C

V

DS

= 0V

V

GS

V

= 25V

DS

ƒ = 1.0MHz, VGS = 0V, VDS = 0V to 200V

and center of die contact

= 1mA

D

e

e

GS

e

= 15V

D

G

S

Avalanche Characteristics

Typ. Max.

––– 130

–––

33

300 –––

–––

26

mJ

V

A

E

AS

E

AR

V

DS(Avalanche)

I

AS

Parameter Units

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche Voltage

Avalanche Current

d

d c c

Diode Characteristics

Conditions

e

IS @ TC = 25°C

I

SM

V

SD

t

rr

Q

rr

Parameter Min. Typ. Max. Units

Continuous Source Current ––– –––

(Body Diode) A

Pulsed Source Current ––– –––

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 190 290 ns

Reverse Recovery Charge ––– 840 1260 nC

46

180

MOSFET symbol

showing the

integral reverse

p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V

= 25°C, IF = 26A, VDD = 50V

T

J

di/dt = 100A/µs

2 www.irf.com

e

IRFB4229PbF

1000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 15V

100

BOTTOM 5.5V

10

1

0.1 1 10 100

VGS

10V

8.0V

7.0V

6.5V

6.0V

5.5V 60µs PULSE WIDTH

≤

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

)

Α

100

(

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TJ = 175°C

10

1

0.1

0.01

4.0 5.0 6.0 7.0 8.0

TJ = 25°C

V

= 25V

DS

60µs PULSE WIDTH

≤

VGS, Gate-to-Source Voltage (V)

1000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 15V

100

BOTTOM 5.5V

10

1

0.1 1 10 100

VGS

10V

8.0V

7.0V

6.5V

6.0V

60µs PULSE WIDTH

≤

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 26A

V

GS

= 10V

3.0

2.5

) d

2.0

e z

i

l a

m

r

1.5

o N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

5.5V

Fig 3. Typical Transfer Characteristics

1600

L = 220nH C = 0.3µF 100°C 25°C

1200

) J µ

( e

s

l u p r

800

e p

y g

r e n E

400

0

150 160 170 180 190 200

V

Drain-to -Source Voltage (V)

DS,

Fig 5. Typical E

vs. Drain-to-Source Voltage

PULSE

Fig 4. Normalized On-Resistance vs. Temperature

1400

L = 220nH C = Variable

1200

100°C

) J µ

( e

s

l u p r e p

y g

r e n E

25°C

1000

800

600

400

200

0

100 110 120 130 140 150 160 170

ID, Peak Drain Current (A)

Fig 6. Typical E

vs. Drain Current

PULSE

www.irf.com 3

IRFB4229PbF

2000

L = 220nH

C= 0.3µF C= 0.2µF C= 0.1µF

0

25 50 75 100 125 150

Temperature (°C)

) J µ

( e

s

l u p r e p

y g

r e n E

1600

1200

800

400

1000

) A

( t

100

n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

1

D S

I

0.1

TJ = 175°C

TJ = 25°C

V

= 0V

GS

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical E

7000

6000

)

5000

F p

( e

c

4000

n a

t

i c a

3000

p a

C ,

C

2000

1000

Coss

Ciss

V

= 0V, f = 1 MHZ

GS

C

= C

iss

C

= C

rss

C

= C

oss

vs.Temperature

PULSE

+ Cgd, C

gs

gd

ds

+ C

ds

gd

SHORTED

Crss

0

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

50

40

) A

( t n e

30

r

r u

C n

i a

r

20

D ,

D

I

10

0

25 50 75 100 125 150 175

TJ, Junction Temperature (°C)

Fig 8. Typical Source-Drain Diode Forward Voltage

20

ID= 26A

) V

(

16

e g a

t

l o V

e

12

c

r u o S

o

t

8

e

t a

G ,

S

4

G

V

VDS= 160V VDS= 100V

VDS= 40V

0

0 20 40 60 80 100 120

Q

Total Gate Charge (nC)

G

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

1000

) A

( t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

1µsec

100µsec

10µsec

VDS, Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Safe Operating Area

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IRFB4229PbF

τ

)

0.40

(

Ω

e c n a

t s

i s e

0.30

R n O e

c

r u

0.20

o S

o

t

n

i a

r

0.10

D ,

) n o

(

S D

0.00

R

5 6 7 8 9 10

ID = 26A

TJ = 125°C

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

5.0

) V

4.5

( e

g a

t

l

4.0

o V

d

l o

3.5

h s e

r h

t

3.0

e

t a

G

)

2.5

h

t

( S G

2.0

V

ID = 250µA

600

) J

m

( y

500

g

r e n E

e

400

h c n a

l a v

300

A e

s

l u P

200

e

l g n

i S

100

, S A

E

0

25 50 75 100 125 150 175

I

TOP

7.4A

13A

BOTTOM

26A

D

Starting TJ, Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Temperature

140

ton= 1µs

120

) A

( t

100

n e

r

r u

C

80

k a e P

60

e v

i

t

i

t e

40

p e

R

20

Duty cycle = 0.25 Half Sine Wave Square Pulse

1.5

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 15. Threshold Voltage vs. Temperature

1

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.1

0.20

0.10

0.05

0.01

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

0

25 50 75 100 125 150 175

Case Temperature (°C)

Fig 16. Typical Repetitive peak Current vs.

Case temperature

R

2

3

R

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

C

0.080717 0.000052

τ

3

τ

3

0.209555 0.001021

0.159883 0.007276

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τι

(sec)

Ci= τi/Ri

1

R

1

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFB4229PbF

A

D.U.T

+



-



R

G

*

Use P-Channel Driver for P-Channel Measurements

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

*

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

** Reverse Polarity for P-Channel

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

15V

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

Reverse Recovery Current

D.U.T. VDSWaveform

V

Re-Applied

DD

Voltage

+

**

-

Inductor Curent

*** V

GS

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

t

P. W .

D =

Period

***

VGS=10V

V

DD

I

SD

V

(BR)DSS

p

L

D.U.T

I

AS

Ω

0.01

t

p

R

V

20V

V

DS

G

GS

Fig 19a. Unclamped Inductive Test Circuit

L

0

DUT

1K

Fig 20a. Gate Charge Test Circuit

DRIVER

+

VCC

V

DD

-

I

AS

Fig 19b. Unclamped Inductive Waveforms

Vds

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Id

Vgs

Fig 20b. Gate Charge Waveform

6 www.irf.com

IRFB4229PbF

A

B

RG

Fig 21a. t

and E

st

DRIVER

Ipulse

DUT

PULSE

C

L

VCC

Test Circuit

PULSE A

PULSE B

Fig 21b. tst Test Waveforms

t

ST

Fig 21c. E

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

+

Fig 22a. Switching Time Test Circuit

V

DD

-

Test Waveforms

PULSE

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 22b. Switching Time Waveforms

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IRFB4229PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

/27&2'( $66(0%/('21:: ,17+($66(0%/</,1(&

1RWH3LQDVVHPEO \OLQ HS RV LWLRQ

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,17(51$7,21$/

5(&7,), (5

/2*2

$66(0%/< /27&2'(

TO-220AB packages are not recommended for Surface Mount Application.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 0.37mH, RG = 25Ω, I

J

AS

= 26A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 R

is measured at T

θ

of approximately 90°C.

J

 Half sine wave with duty cycle = 0.25, ton=1µsec.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

This product has been designed and qualified for the Industrial market.

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2007

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