Datasheet IRFB 7437 Datasheet

Applications

R

DS(on)

typ.



l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits

l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters

l DC/AC Inverters

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

PD - 97776

StrongIRFET

IRFB7437PbF

HEXFET® Power MOSFET

V

D

DSS

max.

G

I

D

(Silicon Limited)

S

I

D

(Package Limited)

D

S

D

G

TO-220AB

IRFB7437PbF

40V

1.5m

2.0m

250A

195A

c

GDS

Gate Drain Source

Ordering Information

Base part number Package Type Standard Pack Complete Part

Form Quantity Number

IRFB7437PbF

)



6

m

( e

c n

5

a

t s

i s e

R

4

n O e

c

r

3

u o S

o

t

-

2

n

i a

r D

,

1

) n o

(

S D

0

R

4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0

VGS, Gate-to-Source Voltage (V)

TO-220 Tube 50

250

ID = 100A

200

) A

( t n e

150

r

r u

C

TJ = 125°C

TJ = 25°C

n

i a

r

100

D ,

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

IRFB7437PbF

LIMITED BY PACKAGE

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

www.irf.com 1

4/20/12

IRFB7437PbF

Symbol

Parameter

Min.

Typ.

Max.

Units





Symbol

Parameter

Units

V/ns

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Thermal Resistance

Max.

Absolute Maximum Ratings

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

D

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

I

D

I

DM

@TC = 25°C

P

D

Pulsed Drain Current

Maximum Power Dissipation

d

Linear Derating Factor

V

GS

dv/dt T

J

T

STG

Gate-to-Source Voltage

Peak Diode Recovery

f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbfxin (1.1Nxm)

c

250

180

195

1000

230

1.5

± 20

3.0

-55 to + 175

300

Avalanche Characteristics

d

e

k

350

500

See Fig. 14, 15, 22a, 22b

0.65

0.50 –––

E

AS (Thermally limited)

(tested)

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy Tested Value

d

Symbol Parameter Typ. Max. Units

R

JC



R

CS



R

JA



Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

j –––

j ––– 62

A

W

W/°C

V

°C

mJ

A

mJ

°C/W

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25, I

 I

 100A, di/dt  1166A/μs, V

SD

Drain-to-Source Breakdown Voltage 40 ––– ––– V

/T

Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 1.5 2.0

Gate Threshold Voltage 2.2 3.0 3.9 V Drain-to-Source Leakage Current ––– ––– 1.0 μA

Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Internal Gate Resistance ––– 2.2 –––

, starting TJ = 25°C, L = 0.069mH

Jmax

= 100A, VGS =10V.

AS

DD

V

(BR)DSS

, TJ  175°C.

Conditions

VGS = 0V, ID = 250μA Reference to 25°C, I VGS = 10V, ID = 100A

m

––– 1.8 –––

––– ––– 150

V

= 6.0V, ID = 50A

GS

V

= VGS, ID = 150μA

DS

= 40V, VGS = 0V

V

DS

= 40V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

 Pulse width  400μs; duty cycle  2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

 R

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C.



is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

 This value determined from sample failure population,

starting TJ = 25°C, L=0.095mH, RG = 25, I

AS

D

.

= 100A, VGS =10V

= 1mA

d

2 www.irf.com

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

Symbol

Parameter

Min.

Typ.

Max.

Units

(Body Diode)

di/dt = 100A/μs

g

, See Fig. 11

gfs Forward Transconductance 160 ––– ––– S Q

Q Q Q t

d(on)

t

r

t

d(off)

t

f

C C C C C

g

gs

gd

sync

iss

oss

rss

oss

eff. (ER) eff. (TR)

Total Gate Charge ––– 150 225 nC Gate-to-Source Charge ––– 41 ––– Gate-to-Drain ("Miller") Charge ––– 51 ––– Total Gate Charge Sync. (Qg - Qgd)

–––99––– Turn-On Delay Time ––– 19 ––– ns Rise Time ––– 70 ––– Turn-Off Delay Time ––– 78 ––– Fall Time ––– 53 –––

Input Capacitance ––– 7330 ––– pF Output Capacitance ––– 1095 ––– Reverse Transfer Capacitance ––– 745 –––

––– 1310 –––

h

i

––– 1735 –––

Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)

Diode Characteristics

I

S

I

SM

V

SD

dv/dt t

rr

Q

rr

I

RRM

Continuous Source Current ––– –––

250

c

(Body Diode) Pulsed Source Current ––– ––– 1000 A

d

Diode Forward Voltage ––– 1.0 1.3 V

Peak Diode Recovery f

––– 3.1 ––– V/ns

Reverse Recovery Time ––– 30 ––– ns

–––30––– Reverse Recovery Charge ––– 24 ––– nC

–––25––– Reverse Recovery Current ––– 1.3 ––– A

IRFB7437PbF

Conditions

VDS = 10V, ID = 100A

I

= 100A

D

V

=20V

DS

g

= 10V

V

GS

I

= 100A, VDS =20V, VGS = 10V

D

= 20V

V

DD

= 30A

I

D

R

= 2.7

G

VGS = 10V

V

GS

V

DS

ƒ = 1.0 MHz, See Fig. 5 V

GS

VGS = 0V, VDS = 0V to 32V

A

MOSFET symbol

showing the integral reverse

p-n junction diode.

= 25°C, IS = 100A, VGS = 0V

T

J

= 175°C, IS = 100A, VDS = 40V

T

J

T

= 25°C VR = 34V,

J

T

= 125°C IF = 100A

J

T

= 25°C

J

T

= 125°C

J

T

= 25°C

J

g

= 0V = 25V

= 0V, VDS = 0V to 32V

Conditions

i

h

D

G

S

g

www.irf.com 3

IRFB7437PbF

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

i

10

a

r D

,

D

I

4.5V

60μs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

) A

(

t n e

r

100

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

TJ = 175°C

TJ = 25°C

V

DS



60μs PULSE WIDTH

= 10V

1.0 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

100000

) F

10000

p

( e

c n a

t

i c a p a

C ,

1000

C

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

oss

ds

+ Cgd, C

+ C

gd

C

iss

C

oss

C

rss

SHORTED

ds

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

) A

( t n e

r

r u

C e

c

r u

100

o S

o

t

n

i a

r D

,

D

I

4.5V

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

60μs PULSE WIDTH

10

Tj = 175°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 100A

V

1.8

GS

= 10V

1.6

) d e

1.4

z

i

l a

m

r

1.2

o N

(

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120140160 180

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

14

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 100A

12

10

8

6

4

S G

2

VDS= 32V

VDS= 20V

0

100

1 10 100

VDS, Drain-to-Source Voltage (V)

0 40 80 120 160 200

Q

Total Gate Charge (nC)

G

Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage

4 www.irf.com

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

100

10

1

0.1

0.0 0.5 1.0 1.5 2.0 2.5

TJ = 25°C

V

GS

VSD, Source-to-Drain Voltage (V)

= 0V

Fig 9. Typical Source-Drain Diode

) V

(

50

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D ,

S S D

) R B

(

V

Id = 1.0mA

48

46

44

42

40

-60 -40 -20 0 20 40 60 80 100 120140160 180

Forward Voltage

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

)

8



m

( e

c

7

n a

t s

i s e

6

R n O

5

e c

r u o S

4

o

t

n

i a

3

r D

,

) n

2

o

( S

D

R

1

0 100 200 300 400 500

V

= 5.5V

GS

V

= 6.0V

GS

V

= 7.0V

GS VGS = 8.0V VGS = 10V

ID , Drain Current (A)

IRFB7437PbF

1000

) A

( t n e

r

100

r u

C e

c

r u o

10

S

o

t

n

i a

r D

1

,

D

I

0.1

0.1 1 10

Limited by Package

OPERATION IN THIS AREA LIMITED BY RDS(on)

Tc = 25°C Tj = 175°C Single Pulse

VDS, Drain-toSource Voltage (V)

Fig 10. Maximum Safe Operating Area

1.2

1.0

0.8

) J

μ

( y

0.6

g

r e n E

0.4

0.2

0.0

0 10 20 30 40 50

V

Drain-to-Source Voltage (V)

DS,

Fig 12. Typical C

OSS

100μsec

1msec

Stored Energy

10msec

DC

Fig 13. Typical On-Resistance vs. Drain Current

www.irf.com 5

IRFB7437PbF

1

)

0.1

C J h

t Z (

e s n o

0.01

p s e

R l a

m

r e

0.001

h T

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

)

A

(

100

t

n

e

r

u

C

e

h

c

n

a

l

a

10

v

A

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and

Tstart = 150°C. (Single Pulse)

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

Fig 15. Typical Avalanche Current vs.Pulsewidth

350

TOP Single Pulse

300

) J

m

(

250

y g

r e n E

200

e h c n a

150

l a v A ,

100

R A

E

50

0

25 50 75 100 125 150 175

BOTTOM 1% Duty Cycle ID = 100A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy vs. Temperature

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

tav (sec)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

is not exceeded.

jmax

3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. T = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

6 www.irf.com

IRFB7437PbF

4.5

) V

4.0

( e

g a

t

l

3.5

o V

d

l o

3.0

h s e

r h

t e

t a

G ,

) h

t

( S G

V

ID = 150μA

2.5 ID = 1.0mA

ID = 1.0A

2.0

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 17. Threshold Voltage vs. Temperature

10

IF = 100A

VR = 34V

8

TJ = 25°C

TJ = 125°C

6

) A

(

R R

I

4

10

IF = 60A

VR = 34V

8

TJ = 25°C

TJ = 125°C

6

) A

(

R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 18 - Typical Recovery Current vs. dif/dt

140

IF = 60A

120

VR = 34V

TJ = 25°C

100

TJ = 125°C

)

80

A

(

R R

60

Q

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

140

IF = 100A

120

VR = 34V

TJ = 25°C

100

TJ = 125°C

)

80

A

(

R R

60

Q

40

20

0

0 200 400 600 800 1000

40

20

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt

diF /dt (A/μs)

www.irf.com 7

Fig. 21 - Typical Stored Charge vs. dif/dt

IRFB7437PbF

A

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf





D.U.T

+

-

R

G

+



Circuit Layout Considerations  Low Stray Inductance Ground Plane

-

Low Leakage Inductance Current Transformer



-

dv/dt controlled by R Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

G

Reverse Recovery

+

-

Current

Re-Applied Voltage

+

V

DD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple  5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

V

20V

G

GS

D.U.T

I

AS

0.01

t

p



+

V

DD

-

Fig 23a. Unclamped Inductive Test Circuit

R

V

DS

V

GS

R

G

10V

V

GS

Pulse Width µs Duty Factor 

D

D.U.T.

Fig 24a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

V

GS

3mA

.3F

D.U.T.

+

V

DS

-

I

AS

Fig 23b. Unclamped Inductive Waveforms

+

V

DD

-

Fig 24b. Switching Time Waveforms

Vds

Vgs(th)

Id

Vgs

I

Current Sampling Resistors

Fig 25a. Gate Charge Test Circuit

8 www.irf.com

I

G

D

Qgs1

Qgs2 Qgd Qgodr

Fig 25b. Gate Charge Waveform

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRFB7437PbF

TO-220AB Part Marking Information

EXAMPLE : T HIS IS AN IRF1010

LOT CODE 1789 AS S EMBL E D ON WW 19, 2000 IN THE ASS EMBLY LINE "C"

Note: "P" in assembly line position

i ndi cates "L ead - F r ee"

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE E K 1 9 LINE C

IRFB7437PbF

†

Qualification information

Qualification level

(per JEDEC JESD47F††† guidelines) Moisture Sensitivity Level TO-220 RoHS compliant

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

 Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/  Applicable version of JEDEC standard at the time of product release.

Industrial††

Not applicable

Yes

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/2012

10 www.irf.com