Datasheet IRFB3256PBF Datasheet

PD - 97727

R

DS(on)

typ.

2.7m

Ω

Symbol

Parameter

Units

ID @ TC = 25°C

ID @ TC = 100°C

ID @ TC = 25°C

Continuous Drain Current, V

@ 10V (Package Limited)

I

PD @TC = 25°C

V

T

EASSingle Pulse Avalanche Energy (Thermally Limited)

d

IARAvalanche Current

c

EARRepetitive Avalanche Energy

c

Thermal Resistance

R

Max.

IRFB3256PbF

HEXFET® Power MOSFET

D

V

DSS

60V

Applications

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

Absolute Maximum Ratings

max.

G

GDS

Gate Drain Source

I

D (Silicon Limited)

I

S

D

(Package Limited)

D

S

D

G

TO-220AB

3.4m 206A

75A

DM

GS

dv/dt

J

STG

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

c

e

@ 10V (Silicon Limited)

GS

@ 10V (Silicon Limited)

GS

206

172

75

820

300

2.0

± 20

3.3

-55 to + 175

300 (1.6mm from case)

10lbf

in (1.1Nxm)

x

Avalanche Characteristics

340

See Fig. 14, 15, 22a, 22b

Symbol Parameter Typ. Max. Units

θ

JC

θ

CS

θJA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

ij

–––

0.50 –––

––– 62

0.50 °C/W

A

W

W/°C

V

V/ns

°C

mJ

A

mJ

www.irf.com 1

09/22/11

IRFB3256PbF

Symbol

Parameter

Min.

Typ.

Max.

Units

V

Drain-to-Source Breakdown Voltage

60

–––

VΔV

/ΔTJ Breakdown Voltage Temp. Coefficient

–––29–––

mV/°C

R

Static Drain-to-Source On-Resistance

–––

2.7

3.4

Ω

V

Gate Threshold Voltage

2.0

–––

4.0Vgfs

Forward Transconductance

88

–––

–––SRGInternal Gate Resistance

–––

0.79

–––ΩI

Drain-to-Source Leakage Current

–––

–––20μA

–––

250

I

Gate-to-Source Forward Leakage

–––

100nAGate-to-Source Reverse Leakage

–––

-100

Symbol

Parameter

Min.

Typ.

Max.

Units

QgTotal Gate Charge

–––

130

195nCQgsGate-to-Source Charge

–––31–––

QgdGate-to-Drain ("Miller") Charge

–––42–––

Q

Total Gate Charge Sync. (Q

- Qgd)

–––88–––

t

Turn-On Delay Time

–––22–––nstrRise Time

–––77–––

t

Turn-Off Delay Time

–––55–––

tfFall Time

–––64–––

C

Input Capacitance

–––

6600

–––pFC

Output Capacitance

–––

720

–––

C

Reverse Transfer Capacitance

–––

400

–––

C

eff. (ER)

–––

1080

–––

C

eff. (TR)

–––

1400

–––

Symbol

Parameter

Min.

Typ.

Max.

Units

ISContinuous Source Current

–––

A

ISMPulsed Source Current

–––

820A(Body Diode)

VSDDiode Forward Voltage

–––

1.3VtrrReverse Recovery Time

–––43–––nsTJ = 25°C

VR = 51V,

–––53–––

TJ = 125°C

IF = 75A

QrrReverse Recovery Charge

–––58–––nCTJ = 25°C

di/dt = 100A/μs

f

–––65–––

TJ = 125°C

I

Reverse Recovery Current

–––

2.4

–––ATJ = 25°C

tonForward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

Ω

Static @ TJ = 25°C (unless otherwise specified)

(BR)DSS

DS(on)

GS(th)

DSS

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

sync

d(on)

d(off)

iss

oss

rss

oss

Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)

g

Diode Characteristics

VGS = 0V, ID = 250μA Reference to 25°C, I VGS = 10V, ID = 75A

m

VDS = VGS, ID = 150μA

= 25V, ID = 75A

V

DS

= 60V, VGS = 0V

V

DS

V

= 60V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

V

= -20V

GS

ID = 75A

= 30V

V

DS

VGS = 10V

= 75A, VDS =0V, VGS = 10V

I

D

f

VDD = 39V I

= 75A

D

R

= 2.7

G

VGS = 10V

f

VGS = 0V V

= 48V

DS

ƒ = 1.0 MHz, See Fig. 5 V

= 0V, VDS = 0V to 48V h, See Fig. 11

GS

V

= 0V, VDS = 0V to 48V

GS

= 1.0mA

D

f

Conditions

c

g

MOSFET symbol

showing the integral reverse

G

p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V

.

DSS

f

(Body Diode)

d

RRM

Notes:

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 50Ω, I above this value.

 I

≤ 75A, di/dt ≤ 890A/μs, V

SD

, starting TJ = 25°C, L = 0.12mH

Jmax

= 75A, VGS =10V. Part not recommended for use

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

206

 C

eff. (ER) is a fixed capacitance that gives the same energy as

oss

C

while V

oss

 R

is measured at TJ approximately 90°C.

θ

 R

value shown is at time zero.

θJC

is rising from 0 to 80% V

DS

 Pulse width ≤ 400μs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging

oss

time as C

oss

while V

is rising from 0 to 80% V

DS

DSS

.

2 www.irf.com

D

S

IRFB3256PbF

1000

TOP 15V

) A

( t n e

r

100

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 4.25V

10

VGS

12V 10V

6.0V

5.0V

4.75V

4.50V

4.25V

60μs PULSE WIDTH

≤

Tj = 25°C

1

0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

) A

( t

n e

r

100

r u

C e

c

r u o S

o

t

n

10

i a

r D

,

D

I

TJ = 175°C

TJ = 25°C

V

= 25V

DS

≤

60μs PULSE WIDTH

1.0 2 3 4 5 6 7

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1000

VGS

12V 10V

6.0V

5.0V

4.75V

4.50V

4.25V

60μs PULSE WIDTH

≤

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

100

10

D

TOP 15V

BOTTOM 4.25V

Tj = 175°C

1

0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.2

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 75A

2.0

V

= 10V

GS

1.8

1.6

) d e z

i

l

1.4

a m

r o

1.2

N

(

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

) F

10000

p

( e

c n a

t

i c a p a

C

1000

, C

100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

14.0 ID= 75A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 48V

VDS= 30V

VDS= 12V

0.0 0 20 40 60 80 100 120 140 160 180

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3

IRFB3256PbF

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

100

TJ = 25°C

10

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

250

200

) A

( t n

150

e

r

r u

C n

i a

r

100

D ,

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Limited by package

Fig 9. Maximum Drain Current vs.

V

GS

= 0V

10000

) A

1000

( t n e

r

r u

C

100

e c

r u o S

-

10

o

t

n

i a

r D ,

1

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

) V

(

72

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D

,

S S D

) R B

(

V

ID = 1.0mA

70

68

66

64

62

60

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

2.0

1.8

1.6

1.4

)

1.2

J

μ

( y

1.0

g

r e n

0.8

E

0.6

0.4

0.2

0.0 0 10203040506070

V

Drain-to-Source Voltage (V)

DS,

Fig 11. Typical C

Stored Energy

OSS

1400

) J

m

(

1200

y g

r e n E

1000

e h c n

800

a

l a v A

e

600

s

l u P

e

l

400

g n

i S ,

200

S A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

TOP 12A

BOTTOM75A

I

D

24A

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com

IRFB3256PbF

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

W

/ C

° )

Z (

e s n o p s e

R l a

m

r e h T

C J h

t

0.001

0.01

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

) A

(

100

t n e

r

r u

C e

h c n a

l a v A

10

0.05

0.10

0.01

pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

400

TOP Single Pulse BOTTOM 1.0% Duty Cycle

) J

m

300

( y

g

r e n E

e h

200

c n a

l a v A ,

R

100

A

E

ID = 75A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

. This is validated for every part type.

jmax

is not exceeded.

jmax

= Average power dissipation per single avalanche pulse.

during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com 5

IRFB3256PbF

4.0

) V

3.5

( e

g a

t

l

3.0

o V

d

l o

2.5

h s e

r h

t

2.0

e

t a

G ,

) h

t

( S G

V

ID = 150μA

ID = 1.0mA

1.5 ID = 1.0A

1.0

0.5

-75 -25 25 75 125 175

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

16

IF = 45A

14

VR = 51V

TJ = 25°C

12

TJ = 125°C

)

10

A

(

M R

8

R

I

16

IF = 30A

14

VR = 51V

TJ = 25°C

12

TJ = 125°C

)

10

A

(

M R

8

R

I

6

4

2

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 17 - Typical Recovery Current vs. dif/dt

500

IF = 30A

VR = 51V

400

TJ = 25°C

TJ = 125°C

)

300

C n

(

R R

Q

200

6

4

2

0 200 400 600 800 1000

diF /dt (A/μs)

500

400

)

300

C n

(

R R

Q

200

100

0

0 200 400 600 800 1000

100

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

IF = 45A

VR = 51V

TJ = 25°C

TJ = 125°C

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com

IRFB3256PbF

A





D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Reverse Recovery

+

-

Current

Re-Applied Voltage

+

V

DD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

V

20V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

3mA

.3μF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

www.irf.com 7

I

G

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

IRFB3256PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

/27&2'( $66(0%/('21:: ,17+($66(0%/</,1(&

1RWH3LQDVVHPEO\OLQHSRVLWLRQ

LQGLFDWHV/HDG)UHH

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

8 www.irf.com

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

IRFB3256PbF

Qualification information

Qualification level

†

Cons umer

(per JEDE C JES D47F

††

†††

guidelines )

MS L 1

Moisture Sensitivity Level

TSOP-6

(per IP C/JE DE C J- S T D-02 0 D

RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

†† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

††† Applicable version of JEDEC standard at the time of product release.

†††

)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2011

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