Datasheet IRFB4620PBF Datasheet

Applications

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

PD -96172

IRFB4620PbF

HEXFET® Power MOSFET

D

V

DSS

R

DS(on)

G

max. I

D

S

typ.

TO-220AB

IRFB4620PbF

200V

60m

72.5m 25A

:

GDS

Gate Drain Source

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C

@ TC = 100°C Continuous Drain Current, VGS @ 10V

I

D

I

DM

PD @TC = 25°C

V

GS

dv/dt T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

c

e

@ 10V

GS

Max.

25

18

100

144

0.96

± 20

54

-55 to + 175

300

x

in (1.1Nxm)

10lb

Avalanche Characteristics

f

d

113

See Fig. 14, 15, 22a, 22b,

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

c

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case Case-to-Sink, Flat, Greased Surface 0.50

Junction-to-Ambient (PCB Mount)

j

ij

–––

––– 62

1.045

A

W

W/°C

V

V/ns

°C

mJ

A

mJ

°C/W

www.irf.com 1

09/05/08

IRFB4620PbF

s

/

g

s

g

s

/

f

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G(int)

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

fs Forward Transconductance 37 ––– ––– S

Q

g

Q

gs

Q

gd

Q

sync

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

eff. (ER)

oss

C

eff. (TR)

oss

Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit

I

S

I

SM

V

SD

t

rr

Q

rr

I

RRM

t

on

Drain-to-Source Breakdown Voltage 200 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 60 72.5 Gate Threshold Voltage 3.0 ––– 5.0 V Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leaka

e ––– ––– -100

Internal Gate Resistance ––– 2.6 –––

Total Gate Charge ––– 25 38 Gate-to-Source Charge ––– 8.2 ––– Gate-to-Drain ("Miller") Charge ––– 7.9 ––– Total Gate Charge Sync. (Qg - Qgd)

––– 17 ––– Turn-On Delay Time ––– 13.4 ––– Rise Time ––– 22.4 ––– Turn-Off Delay Time ––– 25.4 ––– Fall Time ––– 14.8 ––– Input Capacitance ––– 1710 ––– Output Capacitance ––– 125 ––– Reverse Transfer Capacitance ––– 30 –––

Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)

Continuous Source Current

(Body Diode) Pulsed Source Current

(Body Diode)

c

––– 113 –––

h

––– 317 –––

g

––– –––

25

100

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 78 –––

––– 99 ––– Reverse Recovery Charge ––– 294 –––

––– 432 ––– Reverse Recovery Current ––– 7.6 ––– A Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 15A

V

mΩ

GS

= VGS, ID = 100µA

V

DS

V

= 200V, VGS = 0V

DS

µA

V

= 200V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

nA

V

= -20V

GS

Ω

Conditions

VDS = 50V, ID = 15A I

= 15A

D

= 100V

V

DS

nC

ns

pF

= 10V

V

GS

= 15A, VDS =0V, VGS = 10V

I

D

V

DD

I

= 15A

D

R

= 7.3Ω

G

VGS = 10V V

GS

V

DS

f

= 130V

f

= 0V

= 50V ƒ = 1.0MHz (See Fig.5) V

= 0V, VDS = 0V to 160V h(See Fig.11)

GS

V

= 0V, VDS = 0V to 160V

GS

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = 15A, VGS = 0V TJ = 25°C VR = 100V,

ns

T

= 125°C IF = 15A

J

TJ = 25°C

nC

TJ = 125°C TJ = 25°C

= 5mA

D

f

di

dt = 100A/µs

c

g

D

G

S

f

Notes:

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I above this value .

 I

≤ 15A, di/dt ≤ 634A/µs, V

SD

, starting TJ = 25°C, L = 1.0mH

Jmax

= 15A, VGS =10V. Part not recommended for use

AS

≤ V

DD

(BR)DSS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com

, TJ ≤ 175°C.

 C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C

θ

IRFB4620PbF

1000

TOP 15V

)

100

A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

1

0.1

BOTTOM 5.0V

VGS

12V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

60µs PULSE WIDTH

≤

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

) A

( t

100

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

1

TJ = 175°C

TJ = 25°C

V

DS

≤

60µs PULSE WIDTH

= 50V

0.1 2 4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1000

TOP 15V

) A

(

100

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 5.0V

10

1

VGS

12V 10V

8.0V

7.0V

6.0V

5.5V

60µs PULSE WIDTH

≤

5.0V

Tj = 175°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5

e c n a

t s

i s e

R n O

)

e c

d

r

e

u

z

i

o

l a

S

m

o

r

t

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

3.0

2.5

2.0

1.5

1.0

ID = 15A

V

= 10V

GS

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

10000

) F p

( e

c n a

t

1000

i c a p a

C ,

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

C

rss

gs

gd

ds

C

oss

+ Cgd, C

+ C

iss

SHORTED

ds

gd

10

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

14.0

ID= 15A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 160V

VDS= 100V

VDS= 40V

0.0 0 5 10 15 20 25 30 35

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3

IRFB4620PbF

100

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

TJ = 25°C

10

1.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

30

25

) A

(

20

t n e

r

r u

C

15

n

i a

r D

10

,

D

I

5

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

V

GS

= 0V

1000

OPERATION IN THIS AREA

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

LIMITED BY RDS(on)

100µsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

) V

(

260

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D

,

S S D

) R B

(

V

Id = 5mA

250

240

230

220

210

200

190

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

3.0

2.5

2.0

) J µ

( y

1.5

g

r e n E

1.0

0.5

0.0

-50 0 50 100 150 200

V

Drain-to-Source Voltage (V)

Fig 11. Typical C

DS,

Stored Energy

OSS

500

) J

m

450

( y

g

r

400

e n E

350

e h c n

300

a

l a v

250

A e

s

l

200

u P

e

150

l g n

i

100

S ,

S

50

A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

TOP 2.05A

BOTTOM 15A

I

D

2.94A

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com

τ

100

IRFB4620PbF

10

W

/ C

°

1

)

C J h

t

Z (

e

0.1

s n o p s e

R l a

0.01

m

r e h T

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

R

1

R

τ

1

Ci= τi/Ri

1

τ

J

τ

J

τ

1

t1 , Rectangular Pulse Duration (sec)

R

2

R

τ

2

τ

2

Ri (°C/W) τi (sec)

2

0.456 0.000311

τ

C

0.589 0.003759

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

) A

(

10

t n e

r

r u

C e

h c n a

l

1

a v

A

0.01

0.05

0.10

pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.

0.1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

120

TOP Single Pulse

100

) J

m

( y

g

80

r e n E

e h

60

c n a

l a v A

40

,

R A

E

20

BOTTOM 1.0% Duty Cycle ID = 15A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

= Average power dissipation per single avalanche pulse.

D (ave)

during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed T 25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

Fig 15. Maximum Avalanche Energy vs. Temperature

D (ave)·tav

is not exceeded.

jmax

(assumed as

jmax

thJC

www.irf.com 5

IRFB4620PbF

6.0

5.5

) V

( e

5.0

g a

t

l

4.5

o V

d

l

4.0

o h s e

3.5

r h

t e

3.0

t a

G ,

2.5

) h

t

(

2.0

S G

V

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 100µA

ID = 250uA

ID = 1.0mA ID = 1.0A

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

90

IF = 15A

80

VR = 100V

70

TJ = 25°C

TJ = 125°C

60

)

50

A

(

R R

40

I

30

20

10

0

0 200 400 600 800 1000

diF /dt (A/µs)

90

IF = 10A

80

VR = 100V

70

TJ = 25°C

TJ = 125°C

60

)

50

A

(

R R

40

I

30

20

10

0

0 200 400 600 800 1000

diF /dt (A/µs)

Fig. 17 - Typical Recovery Current vs. dif/dt

2000

1800

1600

1400

) A

1200

(

R R

1000

Q

IF = 10A

VR = 100V

TJ = 25°C

TJ = 125°C

800

600

400

200

0 200 400 600 800 1000

diF /dt (A/µs)

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

2000

1800

1600

1400

) A

1200

(

R R

1000

Q

IF = 15A

VR = 100V

TJ = 25°C

TJ = 125°C

800

600

400

200

0 200 400 600 800 1000

diF /dt (A/µs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com

IRFB4620PbF

A





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

V

20V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

3mA

.3µF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

www.irf.com 7

I

G

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

IRFB4620PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

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LQGLFDWHV/HDG)UHH

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2008

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