Datasheet IRFB 7434pbf Datasheet

Applications

R

DS(on)

typ.

1.25m

Ω

PD - 96436

S trongIRFET

IRFB7434PbF

HEXFET® Power MOSFET

l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits

l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters

l DC/AC Inverters

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

V

D

DSS

40V

max. 1.6mΩ

G

I

D

(Silicon Limited)

S

I

D

(Package Limited)

D

G

317A

S

TO-220AB

IRFB7434PbF

GDS

Gate Drain Source

c

195A

Ordering Information

Base part number Package Type

IRFB7434PbF TO-220 Tube 50 IRFB7434PbF

)

5

Ω

m

(

e c n

4

a

t s

i s e

R n

3

O e

c

r u o S

2

o

t

n

i a

r D

1

,

) n o

( S D

0

R

2 4 6 8 10 12 14 16 18 20

V

Gate -to -Source Voltage (V)

GS,

ID = 100A

TJ = 125°C

TJ = 25°C

Standard Pack

Form Qua ntity

350

300

)

250

A

( t n e

r

200

r u

C n

i

150

a

r D ,

D

100

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Complete Part Number

Limited By Package

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

www.irf.com 1

04/20/12

IRFB7434PbF

D

GS

J

STG

AR

θ

JA

Max.

(BR)DSS

Δ

(BR)DSS

J

DS(on)

GS( th)

DSS

GSS

G

Conditions

D

DS

Absolute Maximum Ratings

Symbol Parameter Units

c

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

I

D

I

DM

@TC = 25°C Maximum Power Dissipation W

P

D

Pulsed Drain Current

d

Linear Derating Factor W/°C

V

T

Gate-to -Source Voltage V

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mountin g torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

E

(tested) Single Pulse Avalanche Energy Tested Value

AS

I

E

Single Pulse Avalanche Energy

Avalanche Current

d

Repetitive Avalanche Energy

e

k

d

See Fig. 14, 15 , 22a, 22b

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

JC

R

CS

R

Junction-to-Case

Case-to-Sink, Flat Greased Surface 0.50 –––

Junction-to-Ambient ––– 62

j

––– 0.51

317

c

224

195

1270

294

1.96

± 20

-55 to + 175

300

10lbfxin (1.1Nxm)

490

800

A

°C

mJ

A

mJ

°C/W

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

R

V I

I

R

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 50Ω, I

 I

≤ 100A, di/dt ≤ 1307A/μs, V

SD

Drain-to-Source Breakdown Voltage 40 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C

/ΔT

Static Drain-to-Source On-Resistance ––– 1.25 1.6 mΩ

1.8 ––– mΩ Gate Threshold Voltage 2.2 3.0 3.9 V Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Internal Gate Resistance ––– 2.1 ––– Ω

 Pulse width ≤ 400μs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

, starting TJ = 25°C, L = 0.099mH

Jmax

= 100A, VGS =10V.

AS

DD

≤ V

(BR)DSS

as C

 C

C

 R  This value determined from sample failure population,

, TJ ≤ 175°C.

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C.

θ

starting TJ = 25°C, L=0.099mH, RG = 50Ω, I

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

VGS = 0V, ID = 250μA Referen ce to 25°C, I

= 10V, ID = 100A

V

GS

= 6.0 V, ID = 50A

V

GS

= VGS, ID = 250μA

V V

μA

nA

= 40V, VGS = 0V

V

= 40V, VGS = 0V, TJ = 125°C

V

= 20V

GS

= -20V

V

GS

.

DSS

.

DSS

= 100A, VGS =10V.

AS

= 5mA

g

d

2 www.irf.com

Dynamic @ TJ = 25°C (unless otherwise specified)

g

sync

d(on)

r

iss

oss

rss

S

rr

J

RRM

DS

D

J

D

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 211 ––– ––– S Q Q

gs

Q

gd

Q t t t

d(off)

t

f

C C C

eff. (ER ) Effective Outp ut Capacitance (Energ y Related) –– – 1880 –––

C

oss

eff. (TR) Effective Output Capacita nce (Time Related) –– – 2208 –––

C

oss

Total Gate Charge ––– 216 324 Gate-to-Source Charge ––– 51 ––– Gate-to-Drain ("Miller") Charge ––– 77 ––– Total Gate Charge Sync. (Qg - Qgd) ––– 139 ––– Turn-On Delay Time ––– 24 ––– Rise Time ––– 68 ––– Turn-Off Delay Time ––– 115 ––– Fall Time ––– 68 ––– Input Capacitance ––– 10820 ––– Output Capacitance ––– 1540 ––– Reverse Transfer Capacitance ––– 1140 –––

nC

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

SM

V

SD

dv/dt Peak Diode Recovery t

Q

rr

I

Continuous Source Current

(Body Diode) Pulsed Source Current

(Body Diode)

d

–––

––– 1270

317

c

Diode Forward Voltage ––– 0.9 1.3 V

f

––– 5.0 ––– V/ns

Reverse Recovery Time ––– 38 ––– TJ = 25°C VR = 34V,

––– 37 ––– T

Reverse Recovery Charge ––– 50 ––– TJ = 25°C

––– 50 ––– TJ = 125°C

nC

Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C

Conditions

VDS = 10V, ID = 100A

= 100A

I

=20V

V

DS

g

= 10V

V

GS

I

= 100A, VDS =0V, VGS = 10V VDD = 20V I

= 30A

ns

= 2.7Ω

R

G

VGS = 10V

g

VGS = 0V V

= 25V

pF

ƒ = 1.0 MHz, See Fig. 5

= 0V, VDS = 0V to 32V i, See Fig. 12

V

GS

= 0V, VDS = 0V to 32V

V

GS

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

= 25°C, IS = 100A, VGS = 0V

T

J

= 175°C, IS = 100A, VDS = 40V

T

ns

= 125°C IF = 100A

IRFB7434PbF

h

D

G

S

g

di/dt = 100A/μs

g

www.irf.com 3

IRFB7434PbF

1000

) A

(

100

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

0.1

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

0.1

1000000

100000

) F p

( e

c n a

t

10000

i c a p a

C ,

C

1000

TOP 15V

BOTTOM 4.5V

10

1

4.5V

60μs

≤

PULSE WIDTH

Tj = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

TJ = 175°C

TJ = 25°C

1

V

= 10V

DS

≤

60μs PULSE WIDTH

2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

+ Cgd, C

gs

gd

+ C

ds

SHORTED

ds

gd

C

iss

C

ossC

rss

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

100

D

10

4.5V

60μs

≤

TOP 15V

BOTTOM 4.5V

PULSE WIDTH

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

1.8

1.6

1.4

1.2

1.0

0.8

ID = 100A

V

= 10V

GS

0.6

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

14.0

ID= 100A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 32V

VDS= 20V

100

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.0 0 50 100 150 200 250 300

QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage

4 www.irf.com

IRFB7434PbF

1000

) A

( t

100

n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

10

1

0.1

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

TJ = 25°C

V

GS

= 0V

Fig 9. Typical Source-Drain Diode

) V

(

50

e g a

49

t

l o V

48

n w

o

47

d k a e

r

46

B e

c

45

r u o S

44

o

t

n

43

i a

r D

42

,

S S

41

D

) R

40

B

(

V

-60 -20 20 60 100 140 180

Forward Voltage

Id = 5.0mA

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

)

20.0

Ω

m (

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D ,

) n o

(

S D

R

15.0

10.0

5.0

0.0

V

0 100 200 300 400 500

= 5.5V

GS

ID, Drain Current (A)

V

GS

= 6.0V

VGS = 7.0V VGS = 8.0V VGS = 10V

10000

OPERATION IN THIS AREA

) A

1000

( t n e

r

r u

C

100

e c

r u o S

o

t

n

i a

r D ,

D

I

Limited By Package

10

1

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

LIMITED BY RDS(on)

100μsec

1msec

10msec

Fig 10. Maximum Safe Operating Area

1.6

VDS= 0V to 32V

1.4

1.2

1.0

) J

μ

( y

0.8

g

r e n E

0.6

0.4

0.2

0.0 0 5 10 15 20 25 30 35 40 45

V

Drain-to-Source Voltage (V)

DS,

Fig 12. Typical C

Stored Energy

OSS

DC

Fig 13. Typical On-Resistance vs. Drain Current

www.irf.com 5

IRFB7434PbF

1

W

/ C

° )

C J h

t

Z (

e

0.01

s n o p s e

R l a

0.001

m

r e h T

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 150°C and

) A

(

100

t n e

r

r u

C e

h c n a

l

10

a v

A

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Tstart =25°C (Single Pulse)

Fig 14. Typical Avalanche Current vs.Pulsewidth

600

TOP Single Pulse

500

) J

m

( y

g

400

r e n E

e h

300

c n a

l a v A

200

,

R A

E

100

BOTTOM 1.0% Duty Cycle ID = 100A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

is not exceeded.

jmax

3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

Fig 15. Maximum Avalanche Energy vs. Temperature

6 www.irf.com

IRFB7434PbF

4.5

) V

( e

g

3.5

a

t

l o V

d

l o h s e

2.5

r h

t e

t a

G ,

) h

t

( S G

V

ID = 250μA ID = 1.0mA ID = 1.0A

1.5

0.5

-75 -25 25 75 125 175 225

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

10

IF = 100A

VR = 34V

8

TJ = 25°C

TJ = 125°C

)

6

A

(

M R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

10

IF = 60A

VR = 34V

8

TJ = 25°C

TJ = 125°C

)

6

A

(

M R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 17 - Typical Recovery Current vs. dif/dt

240

IF = 60A

220

VR = 34V

200

TJ = 25°C

180

TJ = 125°C

)

160

C n

(

140

R R

Q

120

100

80

60

40

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

200

IF = 100A

VR = 34V

160

TJ = 25°C

TJ = 125°C

)

120

C n

(

R R

Q

80

40

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dt

www.irf.com 7

IRFB7434PbF

A

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test

G



+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

20V

V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

D.U.T.

D

+

V

DD

-

V

DS

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

3mA

.3μF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

8 www.irf.com

I

G

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

TO-220AB Package Outline

Indust rial

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

IRFB7434PbF

EXAMPL E: THIS IS AN IRF 1010

Note: "P" in assembly line position

LOT CODE 1789 ASS EMBLED ON WW 19, 2000 IN THE ASSEMBLY LINE "C"

indicates "L ead - F r ee"

INTE RNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

PART NUMBER

DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information

Qualification level

RoHS compliant

†

††

†††

(per JEDEC JESD47F

TO-220ABMoisture Sensitivity Level

guidelines)

N/A

(per JE DE C J-S T D-020D

†††

)

Yes

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

 Higher qualification ratings may be available should the user have such requirements. Please contact your Inte rn ati onal Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/  Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/2012

www.irf.com 9