Datasheet IRFHS8242pbf Datasheet

Absolute Maximum Ratings

GS

D

DM

Pulsed Drain Current

c

Power Dissipation

f

Power Dissipation

f

Linear Derating Factor

W/°C

J

STG

G 3

S

D2

D1

4S

5D

6D

TOP VIEW

D

g (typical)

IRFHS8242PbF

IRFHS8242TR2PbF

PQFN 2mm x 2mm

Tape and Reel

400

EOL notice # 259

Standar d Pack

DSon

≤

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = 10V)

Q

25 V

20 V

±

13.0

m

4.3 nC

Ω

( @ VGS = 4.5V)

I

(@T

c(Bottom)

D

= 25°C)

8.5

d

A

2mm x 2mm PQFN

Applications

• System/Load Switch

Features and Benefits

Features Resulting Benefits

Low R Low Thermal Resistance to PCB ( Low Profile ( Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability

(≤ 13.0mΩ) Lower Conduction Losses

13°C/W) Enable better thermal dis sipation

1.0 mm) results in Increased Power Density Easier Manufacturing Environmentally Friendlier

D

S

G

S

Orderable part number Package Type

IRFHS8242TRPbF PQFN 2mm x 2mm Tape and Reel 4000

V

DS

V

@ TA = 25°C

I

@ TA = 70°C

I

PD @TA = 25°C

PD @TA = 70°C

T

@ T

C(Bottom)

= 25°C

= 70°C

= 25°C

Notes  through  are on page 2

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

f

Operating Junction and

Storage Temperature Range

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V (Package Limited)

GS

Form Quantity

-55 to + 150

Max.

25

±20

d

9.9

8.0

d

21

d

17

d

8.5

84

2.1

1.3

0.02

Note

V

A

W

°C

Static @ TJ = 25°C (unless otherwise specified)

ΔΒ

Δ

Total Gate Charge

h

Total Gate Charge

h

Gate-to-Source Charge

h

Gate-to-Drain Charge

h

–––

Diode Characteristics

(Body Diode)

Thermal Resistance

θ

JC

Junction-to-Case

g

R

θ

JC

(Top)

Junction-to-Case

g

–––

90

θ

JA

Junction-to-Ambient

f

R

θ

JA

Junction-to-Ambient (<10s)

f

–––

42

Parameter Min. Typ. Max. Units

BV

DSS

V

/ΔT

DSS

J

R

DS(on)

V

GS(th)

V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 19 ––– ––– S Q

g

Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 25 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C

Static Drain-to-Source On-Resistance ––– 10.0 13.0

––– 17.0 21.0

m

Gate Threshold Voltage 1.35 1.8 2.35 V

Gate Threshold Voltage Coefficient ––– -6.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

––– 4.3 ––– nC

––– 10.4 –––

––– 1.8 –––

––– 1.6 –––

Gate Resistance ––– 1.9 Turn-On Delay Time ––– 6.5 –––

Rise Time ––– 19 –––

Turn-Off Delay Time ––– 5.4 –––

Fall Time ––– 5.3 –––

Input Capacitance ––– 653 –––

Output Capacitance ––– 171 –––

Reverse Transfer Capacitance ––– 78 –––

IRFHS8242PbF

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, I

= 10V, ID = 8.5A

V

GS

Ω

= 4.5V, ID = 6.8A

V

GS

V

= VGS, ID = 25μA

DS

V

= 20V, VGS = 0V

DS

μA

VDS = 20V, VGS = 0V, TJ = 125°C

V

= 20V

GS

nA

nC V

Ω

ns

pF

= -20V

V

GS

V

= 10V, ID = 8.5A

DS

VGS = 4.5V, VDS = 13V, ID = 8.5A

= 13V

V

DS

= 10V

GS

= 8.5Ad (See Fig. 6 & 16)

I

D

= 13V, VGS = 4.5V

V

DD

d

= 8.5A

I

D

RG=1.8Ω

See Fig.17

VGS = 0V

= 10V

V

DS

ƒ = 1.0MHz

= 1mA

D

ed

e

d

e

d

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current

(Body Diode) Pulsed Source Current

c

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 11 17 ns

Reverse Recovery Charge ––– 11 17 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

Parameter Typ. Max. Units

(Bottom)

R

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Current limited by package.  Pulse width ≤ 400μs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board  R

is measured at T

θ

of approximately 90°C.

J

 For DESIGN AID ONLY, not subject to production testing.

––– ––– 8.5

––– ––– 84

d

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = 8.5Ad, VGS = 0V

T

di/dt = 280 A/μs

––– 13

––– 60

Conditions

G

= 25°C, IF = 8.5Ad, VDD = 13V

J

e

D

S

e

°C/W

IRFHS8242PbF

100

TOP 10V

) A

(

10

t n e

r

r u

C e

c

r

1

u o S

o

t

n

i a

r

0.1

D ,

D

I

2.7V

BOTTOM 2.7V

60μs PULSE WIDTH

≤

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

TJ = 150°C

TJ = 25°C

10

D

V

= 15V

DS

≤

60μs PULSE WIDTH

1.0

2.0 3.0 4.0 5.0 6.0 7.0

VGS, Gate-to-Source Voltage (V)

VGS

7.0V

5.0V

4.5V

4.0V

3.5V

3.0V

100

TOP 10V

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

-

1

n

i a

r D

,

D

I

2.7V

60μs PULSE WIDTH

≤

BOTTOM 2.7V

Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.8

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 8.5A

V

= 10V

1.6

GS

1.4

) d e z

i

l

1.2

a m

r o

N

(

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120140 160

TJ , Junction Temperature (°C)

VGS

7.0V

5.0V

4.5V

4.0V

3.5V

3.0V

Fig 3. Typical Transfer Characteristics

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

C

gs

gd

ds

iss

oss

rss

+ Cgd, C

+ C

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

14.0 ID= 8.5A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 20V

VDS= 13V

VDS= 5.0V

0.0 024681012

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

IRFHS8242PbF

100

) A

( t n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

D S

I

1.0

TJ = 150°C

TJ = 25°C

V

= 0V

GS

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

25

20

) A

( t n

15

e

r

r u

C n

i a

r

10

D

,

D

I

5

Limited By Package

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D ,

D

I

Limited by Wire Bond

1

Tc = 25°C Tj = 150°C Single Pulse

0.1 0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

2.4

) V

2.2

( e

g a

t

l

2.0

o V

d

l o

1.8

h s e

r h

t

1.6

e

t a

G ,

1.4

) h

t

( S G

1.2

V

ID = 25μA

0

25 50 75 100 125 150

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

100

W

/ C

°

10

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.1

0.01

D = 0.50

0.20

1

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

1.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

IRFHS8242PbF

)

35

Ω

m (

e

30

c n a

t s

i s

25

e R n O

20

e c

r u o

15

S

o

t

n

i

10

a

r D ,

)

5

n o

( S D

0

R

TJ = 25°C

0 5 10 15 20

V

Gate -to -Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage

GS,

600

500

) W

(

400

r e

w o P

300

e s

l u P

e

l

200

g n

i S

100

ID = 8.5A

TJ = 125°C

)

30

Ω

m

( e

c n a

25

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D ,

) n o

(

S D

R

Vgs = 4.5V

20

15

Vgs = 10V

10

5

0 20 40 60 80 100

ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

0

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Time (sec)

Fig 14. Typical Power vs. Time





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

Re-Applied

DD

Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

IRFHS8242PbF

Vds

Id

Vgs

L

VCC

0

1K

Fig 16a. Gate Charge Test Circuit

DUT

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16b. Gate Charge Waveform

R

D.U.T.

D

+

V

-

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1

Fig 17a. Switching Time Test Circuit

DD

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

Fig 17b. Switching Time Waveforms

t

f

PQFN 2x2 Outline Package Details

IRFHS8242PbF

For footprint and stencil design recommendations, please refer to application note AN-1154 at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 2x2 Outline Part Marking

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PQFN 2x2 Outline Tape and Reel

IRFHS8242PbF

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRFHS8242PbF

Date

Comments

•

Updated data sheet with new IR corporate template

Revision History

Qualificat ion information

Qualific ation level

Moisture Sensitivity Level

RoHS c ompli ant Yes

†

Industrial

(per JEDEC JESD47F

PQFN 2mm x 2mm

†

††

guidelines )

MS L 1

(per JEDEC J-ST D-020D

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Applicable version of JEDEC standard at the time of product release.

•

Updated ordering information to reflect the End-Of-life (EOL) of the mini-r eel option (EOL notice #259)

12/17/2013

•

Updated Qual level from "Consumer" to "Industrial" on page 1, 9

††

)

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit

http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.