Datasheet IRFB4510PBF Datasheet

PD - 97772

Symbol

Parameter

Units

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Symbol

Parameter

Typ.

Max.

Units

V

DSS

R

DS(on)

typ.

max.

I

D (Silicon Limited)

IRFB4510PbF

HEXFET® Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

G

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

Absolute Maximum Ratings

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

D

I

DM

PD @TC = 25°C

V

GS

dv/dt T

J

T

STG

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

c

e

D

S

D

S

D

G

TO-220AB

IRFB4510PbF

GDS

100V

10.7m

13.5m 62A

Ω Ω

Gate Drain Source

Max.

62

44

250

140

0.95

± 20

3.2

-55 to + 175

300

10lb

x

in (1.1Nxm)

A

W

W/°C

V

V/ns

°C

Avalanche Characteristics

E

AS (Thermally limited)

I

AR

E

AR

Thermal Resistance

R

θ

JC

R

θ

CS

R

θ

JA

www.irf.com 1

d

f

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient, TO-220

i

130

See Fig. 14, 15, 22a, 22b,

–––

0.50 ––– °C/W

––– 62

1.05

mJ

A

mJ

4/10/12

IRFB4510PbF

Static @ T

= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V

Drain-to-Source Breakdown Voltage

100

–––

VΔV

/ΔTJ Breakdown Voltage Temp. Coefficient

–––

0.11

–––

V/°C

R

Static Drain-to-Source On-Resistance

–––

10.7

13.5mΩ

V

Gate Threshold Voltage

2.0

–––

4.0VI

Drain-to-Source Leakage Current

–––

–––20μA

–––

250

I

Gate-to-Source Forward Leakage

–––

100nAGate-to-Source Reverse Leakage

–––

-100

RGInternal Gate Resistance

–––

0.6

–––

Ω

Symbol

Parameter

Min.

Typ.

Max.

Units

gfs

Forward Transconductance

100

–––

S

QgTotal Gate Charge

–––5887nCQgsGate-to-Source Charge

–––14–––

QgdGate-to-Drain ("Miller") Charge

–––18Q

Total Gate Charge Sync. (Q

- Qgd)

–––40–––

t

Turn-On Delay Time

–––13–––nstrRise Time

–––32–––

t

Turn-Off Delay Time

–––28–––

tfFall Time

–––28–––

C

Input Capacitance

–––

3180

–––pFC

Output Capacitance

–––

220

–––

C

Reverse Transfer Capacitance

–––

120

–––

C

eff. (ER)

h

–––

260

–––

C

eff. (TR)

–––

325

–––

Symbol

Parameter

Min.

Typ.

Max.

Units

ISContinuous Source Current

–––

–––62A

ISMPulsed Source Current

–––

250

A

VSDDiode Forward Voltage

–––

1.3VtrrReverse Recovery Time

–––5481nsTJ = 25°C

VR = 85V,

–––6090

TJ = 125°C

IF = 37A

QrrReverse Recovery Charge

–––95140nCTJ = 25°C

di/dt = 100A/μs

f

–––

130

195

TJ = 125°C

I

Reverse Recovery Current

–––

3.3

–––ATJ = 25°C

tonForward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

, See Fig.1

Conditions

Ω

J

(BR)DSS

DS(on)

GS(th)

DSS

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

sync

d(on)

d(of f)

iss

oss

rss

oss

Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)

g

Diode Characteristics

VGS = 0V, ID = 250μA Reference to 25°C, I VGS = 10V, ID = 37A

= 5mA

D

f

VDS = VGS, ID = 100μA V

= 100V, VGS = 0V

DS

= 80V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

VDS = 25V, ID = 37A

= 37A

I

D

V

=50V

DS

VGS = 10V I

= 37A, VDS =0V, VGS = 10V

D

f

VDD = 65V I

= 37A

D

R

=2.7

G

VGS = 10V

f

VGS = 0V

= 50V

V

DS

ƒ = 1.0MHz, See Fig.5

= 0V, VDS = 0V to 80V

V

GS

VGS = 0V, VDS = 0V to 80V

c

f

h g

(Body Diode)

RRM

Notes:

c

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I above this value.

 I

≤ 37A, di/dt ≤ 1550A/μs, V

SD

, starting TJ = 25°C, L = 0.192mH

Jmax

= 37A, VGS =10V. Part not recommended for use

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

MOSFET symbol showing the

integral reverse p-n junction diode.

TJ = 25°C, IS = 37A, VGS = 0V

 C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

 R

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C.

θ

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

D

G

S

f

2 www.irf.com

IRFB4510PbF

1000

) A

( t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r

1

D ,

D

I

0.1

0.1 1 10 100

4.0V

≤

Tj = 25°C

TOP 15V 10V

4.3V BOTTOM 4.0V

60μs PULSE WIDTH

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

)

Α

(

t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

0.1

2.0 3.0 4.0 5.0 6.0 7.0

TJ = 175°C

TJ = 25°C

V

= 50V

DS

60μs PULSE WIDTH

≤

VGS, Gate-to-Source Voltage (V)

VGS

6.0V

5.0V

4.8V

4.5V

1000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

TOP 15V 10V

100

4.3V BOTTOM 4.0V

10

D

1

0.1 1 10 100

VGS

6.0V

5.0V

4.8V

4.5V

4.0V

60μs PULSE WIDTH

≤

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 37A

V

= 10V

GS

2.5

2.0

) d e z

i

l

1.5

a m

r o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

100000

10000

) F p

( e

c n a

t

i

1000

c a p a

C ,

C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

C

iss

rss

oss

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

SHORTED

Fig 4. Normalized On-Resistance vs. Temperature

14

ID= 37A

)

12

V

( e

g a

t

10

l o V

e c

8

r u o S

-

6

o

t

e

t a

4

G ,

S G

V

2

0

0 20406080

VDS= 80V

VDS= 50V

VDS= 20V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3

IRFB4510PbF

1000

) A

( t

100

n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

1

D S

I

0.1

TJ = 175°C

TJ = 25°C

V

= 0V

GS

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

70

60

)

50

A

( t n e

r

40

r u

C n

i

30

a

r D ,

D

20

I

10

0

25 50 75 100 125 150 175

TJ, Junction Temperature (°C)

Fig 9. Maximum Drain Current vs.

1000

) A

( t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 110100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

VDS, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

) V

(

125

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D ,

S S D

) R B

(

V

Id = 5mA

120

115

110

105

100

95

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

1.2

1.0

0.8

) J

μ

( y

0.6

g

r e n E

0.4

0.2

0.0

0 20 40 60 80 100

V

Drain-to-Source Voltage (V)

DS,

600

) J

m

( y

500

g

r e n E

e

400

h c n a

l a v

300

A e

s

l u P

200

e

l g n

i S ,

100

S A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

TOP 4.7A

BOTTOM37A

I

D

12A

Fig 11. Typical C

Stored Energy

OSS

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com

IRFB4510PbF

10

W

/ C

°

1

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.001

100

) A

( t n e

r

r u

C e

h c n a

l a v A

0.1

0.01

10

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

0.1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

Fig 14. Typical Avalanche Current vs.Pulsewidth

140

TOP Single Pulse

120

) J

m

( y

100

g

r e n E

80

e h c n a

60

l a v A ,

40

R A

E

20

0

25 50 75 100 125 150 175

BOTTOM 1% Duty Cycle ID = 37A

Starting TJ , Junction Temperature (°C)

Fig 15. Maximum Avalanche Energy vs. Temperature

tav (sec)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

. This is validated for every part type.

jmax

is not exceeded.

jmax

= Average power dissipation per single avalanche pulse.

during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

www.irf.com 5

IRFB4510PbF

4.5

) V

4.0

( e

g a

t

l

3.5

o V

d

l o

3.0

h s e

r h

t

2.5

e

t a

G ,

) h

t

( S G

V

2.0

1.5

ID = 100μA

ID = 250μA

ID = 1.0mA

ID = 1.0A

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

24

20

24

20

16

) A

(

-

12

M R R

I

8

4

0

100 200 300 400 500 600 700 800 900 1000

IF = 24A

VR = 80V

TJ = 125°C

TJ = 25°C

dif / dt - (A / μs)

Fig. 17 - Typical Recovery Current vs. dif/dt

600

500

16

) A

(

-

12

M R R

I

8

4

0

100 200 300 400 500 600 700 800 900 1000

IF = 37A

VR = 80V

TJ = 125°C

TJ = 25°C

dif / dt - (A / μs)

) C

n

(

R

Q

600

500

400

) C

n

(

-

300

R R

Q

200

100

0

100 200 300 400 500 600 700 800 900 1000

IF = 37A

VR = 80V

TJ = 125°C

TJ = 25°C

dif / dt - (A / μs)

400

300

200

100

0

100 200 300 400 500 600 700 800 900 1000

IF = 24A

VR = 80V

TJ = 125°C

TJ = 25°C

dif / dt - (A / μs)

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com

IRFB4510PbF

A





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

(BR)DSS

t

15V

V

DS

L

DRIVER

p

R

G

20V

Fig 22a. Unclamped Inductive Test Circuit

Second Pulse Width < 1μs

D.U.T

I

AS

Ω

0.01

t

p

V

DS

V

GS

Duty Factor < 0.1%

L

D.U.T

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

D

V

DS

+

-

V

DD

90%

10%

V

GS

t

d(on)

r

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Id

Vgs

L

VCC

0

20K

1K

DUT

t

d(off)

t

f

Vds

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 24a. Gate Charge Test Circuit

www.irf.com 7

Fig 24b. Gate Charge Waveform

IRFB4510PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789 AS S EMBL E D ON WW 19, 2000 IN T HE ASSEMBLY LINE "C"

Note: "P" in assembly line pos ition

i ndi cates "L ead - F ree"

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

INTERNATIONAL

RECT IFIER

LOGO

ASSEMBLY LOT CODE

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

Visit us at www.irf.com for sales contact information. 04/12

8 www.irf.com

PART NUMBER

DATE CODE YE AR 0 = 2000 WE E K 19 LINE C

TAC Fax: (310) 252-7903