UTRON |
UT62257C |
Rev. 1.0 |
32K X 8 BIT LOW POWER CMOS SRAM |
FEATURES |
GENERAL DESCRIPTION |
Access time : 35/70ns (max.) Low power consumption: Operating : 40 mA (typical.) Standby : 3mA (typical) normal
2uA (typical) L-version 1uA (typical) LL-version
Single 5V power supply
All inputs and outputs are TTL compatible Fully static operation
Three state outputs
Data retention voltage : 2V (min.) Package : 28-pin 600 mil PDIP
28-pin 330 mil SOP
28-pin 8mmx13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
A3
A4
A5 |
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A6 |
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MEMORY ARRAY |
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VCC |
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ROW |
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A7 |
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DECODER |
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512ROWS × 512COLUMNS |
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A8 |
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VSS |
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A12 |
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A13 |
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A14 |
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. . . |
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I/O1 |
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I/O |
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COLUMN I/O |
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CONTROL |
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I/O8 |
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COLUMN DECODER |
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CE1 |
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LOGIC |
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WE |
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CONTROL |
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A11 |
A10 |
A9 |
A2 |
A1 |
A0 |
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CE2 |
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PIN DESCRIPTION |
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SYMBOL |
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DESCRIPTION |
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A0 - A14 |
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Address Inputs |
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I/O1 - I/O8 |
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Data Inputs/Outputs |
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CE2 |
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Chip Enable Inputs |
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CE1 |
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Write Enable Input |
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WE |
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VCC |
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Power Supply |
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VSS |
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Ground |
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The UT62257C is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology.
The UT62257C is designed for high-speed and low power application. With 2 chip controls
( CE1 CE2 ), it is easy to design memory systems with POWER-DOWN and capacity expansion in the application circuits. It is particularly well suited for battery back-up nonvolatile memory application.
The UT62257C operates from a single 5V power supply and all inputs and outputs are fully TTL compatible.
PIN CONFIGURATION
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A14 |
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1 |
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28 |
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Vcc |
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27 |
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A12 |
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2 |
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WE |
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A7 |
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3 |
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A13 |
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UT62257C |
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A6 |
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A8 |
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A0 |
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I/O8 |
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A5 |
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5 |
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A9 |
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A4 |
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A11 |
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A3 |
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CE2 |
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A2 |
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A10 |
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A1 |
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CE1 |
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I/O1 |
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I/O7 |
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I/O2 |
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I/O6 |
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I/O3 |
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I/O5 |
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Vss |
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I/O4 |
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PDIP/SOP |
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CE2 |
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1 |
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28 |
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A10 |
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A11 |
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2 |
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CE1 |
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A9 |
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I/O8 |
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A8 |
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I/O7 |
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A13 |
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I/O6 |
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WE |
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I/O5 |
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Vcc |
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7 |
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UT62257C |
22 |
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I/O4 |
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A14 |
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Vss |
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A12 |
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I/O3 |
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A7 |
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I/O2 |
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A6 |
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I/O1 |
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A5 |
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A0 |
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A4 |
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A1 |
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A3 |
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A2 |
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STSOP
UTRON TECHNOLOGY INC. |
P80062 |
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
1
UTRON |
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UT62257C |
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Rev. 1.0 |
32K X 8 BIT LOW POWER CMOS SRAM |
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ABSOLUTE MAXIMUM RATINGS* |
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PARAMETER |
SYMBOL |
RATING |
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UNIT |
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Terminal Voltage with Respect to VSS |
VTERM |
-0.5 to +7.0 |
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V |
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Operating Temperature |
TA |
0 to +70 |
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Storage Temperature |
TSTG |
-65 to +150 |
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Power Dissipation |
PD |
1 |
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W |
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DC Output Current |
IOUT |
50 |
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mA |
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Soldering Temperature (under 10 sec) |
Tsolder |
260 |
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*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE |
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CE2 |
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I/O OPERATION |
SUPPLY CURRENT |
CE1 |
WE |
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Standby |
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H |
X |
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X |
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High - Z |
ISB, ISB1 |
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X |
L |
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X |
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High - Z |
ISB, ISB1 |
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Read |
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L |
H |
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H |
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DOUT |
ICC, ICC1, ICC2 |
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Write |
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L |
H |
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L |
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DIN |
ICC, ICC1, ICC2 |
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Note: H = VIH, L=VIL, X = Don't |
care. |
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DC ELECTRICAL CHARACTERISTICS (VCC = 5V±10%, TA = 0 |
to 70 ) |
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PARAMETER |
SYMBOL |
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TEST CONDITION |
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MIN. |
TYP. |
MAX. |
UNIT |
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Input High Voltage |
VIH |
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2.2 |
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VCC+0.5 |
V |
Input Low Voltage |
VIL |
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- 0.5 |
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0.8 |
V |
Input Leakage Current |
ILI |
VSS VIN VCC |
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- 1 |
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1 |
µA |
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Output Leakage |
ILO |
VSS VI/O VCC |
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- 1 |
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1 |
µA |
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Current |
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=VIH or CE2 = VIL |
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CE1 |
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Output High Voltage |
VOH |
IOH= - 1mA |
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2.4 |
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- |
- |
V |
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Output Low Voltage |
VOL |
IOL= 4mA |
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- |
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0.4 |
V |
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Operating Power |
ICC |
Cycle time=Min., II/O = 0mA , |
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- 35 |
- |
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40 |
50 |
mA |
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Supply Current |
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= VIL , CE2 = VIH |
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- 70 |
- |
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30 |
40 |
mA |
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CE1 |
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ICC1 |
Cycle time=1µs,100%duty,II/O=0mA, |
- |
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- |
10 |
mA |
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= 0.2V ; CE2 = VCC-0.2V , |
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CE1 |
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other pins at 0.2V or VCC-0.2V |
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ICC2 |
Cycletime=500ns,100%duty,II/O=0mA, |
- |
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- |
20 |
mA |
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= 0.2V ; CE2 = VCC-0.2V , |
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CE1 |
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other pins at 0.2V or VCC-0.2V |
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Standby Power |
ISB |
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=VIH or CE2 = VIL |
normal |
- |
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1 |
10 |
mA |
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CE1 |
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Supply Current |
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ISB1 |
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0.3 |
5 |
mA |
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CE1 VCC-0.2V |
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CE2 VCC-0.2V |
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ISB |
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=VIH or CE2 = VIL |
-L/-LL |
- |
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- |
3 |
mA |
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CE1 |
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ISB1 |
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VCC-0.2V |
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-L |
- |
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2 |
100 |
µA |
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CE1 |
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CE2 VCC-0.2V |
-LL |
- |
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1 |
40 |
µA |
UTRON TECHNOLOGY INC. |
P80062 |
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
2
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UTRON |
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UT62257C |
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Rev. 1.0 |
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32K X 8 BIT LOW POWER CMOS SRAM |
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CAPACITANCE |
(TA=25 , f=1.0MHz) |
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PARAMETER |
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SYMBOL |
MIN. |
MAX |
UNIT |
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Input Capacitance |
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CIN |
- |
8 |
pF |
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Input/Output Capacitance |
CI/O |
- |
10 |
pF |
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Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels |
0V to 3.0V |
Input Rise and Fall Times |
5ns |
Input and Output Timing Reference Levels |
1.5V |
Output Load |
CL = 100pF, IOH/IOL = -1mA/4mA |
AC ELECTRICAL CHARACTERISTICS |
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) |
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(VCC = 5V±10% , TA = 0 |
to 70 |
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(1) READ CYCLE |
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PARAMETER |
SYMBOL |
UT62257C-35 |
UT62257C-70 |
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UNIT |
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MIN. |
MAX. |
MIN. |
MAX. |
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Read Cycle Time |
tRC |
35 |
- |
70 |
- |
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ns |
Address Access Time |
tAA |
- |
35 |
- |
70 |
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ns |
Chip Enable Access Time |
tACE |
- |
35 |
- |
70 |
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ns |
Output Enable Access Time |
tOE |
- |
25 |
- |
35 |
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ns |
Chip Enable to Output in Low Z |
tCLZ* |
10 |
- |
10 |
- |
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ns |
Output Enable to Output in Low Z |
tOLZ* |
5 |
- |
5 |
- |
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ns |
Chip Disable to Output in High Z |
tCHZ* |
- |
25 |
- |
35 |
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ns |
Output Disable to Output in High Z |
tOHZ* |
- |
25 |
- |
35 |
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ns |
Output Hold from Address Change |
tOH |
5 |
- |
5 |
- |
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ns |
(2) WRITE CYCLE |
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PARAMETER |
SYMBOL |
UT62257C-35 |
UT62257C-70 |
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UNIT |
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MIN. |
MAX. |
MIN. |
MAX. |
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Write Cycle Time |
tWC |
35 |
- |
70 |
- |
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ns |
Address Valid to End of Write |
tAW |
30 |
- |
60 |
- |
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ns |
Chip Enable to End of Write |
tCW |
30 |
- |
60 |
- |
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ns |
Address Set-up Time |
tAS |
0 |
- |
0 |
- |
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ns |
Write Pulse Width |
tWP |
25 |
- |
50 |
- |
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ns |
Write Recovery Time |
tWR |
0 |
- |
0 |
- |
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ns |
Data to Write Time Overlap |
tDW |
20 |
- |
30 |
- |
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ns |
Data Hold from End of Write Time |
tDH |
0 |
- |
0 |
- |
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ns |
Output Active from End of Write |
tOW* |
5 |
- |
5 |
- |
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ns |
Write to Output in High Z |
tWHZ* |
- |
15 |
- |
25 |
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ns |
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC. |
P80062 |
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
3
UTRON |
UT62257C |
|
Rev. 1.0 |
32K X 8 BIT LOW POWER CMOS SRAM |
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TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2,4)
tRC
Address
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tAA |
tOH |
tOH |
DOUT |
Data Valid |
READ CYCLE 2 ( CE1 and CE2 Controlled) (1,3,5,6)
t RC
Address
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t AA |
CE1 |
t ACE1 |
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CE2 |
t ACE2 |
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t CLZ1 |
t CHZ1 |
t CHZ2 |
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t CLZ2 |
t OH |
HIGH-Z |
HIGH-Z |
Dout |
Data Valid |
Notes :
1.WE is HIGH for read cycle.
2. |
Device is continuously selected |
CE1 |
=VIL., CE2= VIH |
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3. |
Address must be valid prior to or coincident with |
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,CE2 transition; otherwise tAA is the limiting parameter. |
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CE1 |
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5. |
tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured 500mV from steady state. |
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± |
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6. |
At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ. |
UTRON TECHNOLOGY INC. |
P80062 |
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
4