SONY D-NE330, D44H-D, D18, D44H11G, D44H8G Service Manual

D44H Series (NPN),

D45H Series (PNP)

Preferred Devices

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

Features

• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO		Vdc
D44H8, D45H8		60
D44H11, D45H11		80
Emitter Base Voltage	VEB	5.0	Vdc
Collector Current	IC		Adc
- Continuous		10
- Peak (Note 1)		20
Total Power Dissipation	PD		W
@ TC = 25°C		70
@ TA = 25°C		2.0
Operating and Storage Junction	TJ, Tstg	-55 to +150	°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction-to-Case	RqJC	1.8	°C/W
Thermal Resistance, Junction-to-Ambient	RqJA	62.5	°C/W
Maximum Lead Temperature for Soldering	TL	275	°C
Purposes: 1/8″ from Case for 5 Seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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10 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS 60, 80 VOLTS

	4	MARKING
		DIAGRAM

	TO-220AB	D4xHyyG
	CASE 221A-09
		AYWW
	STYLE 1
	1
	2 3

D4xHyy = Device Code x = 4 or 5 yy = 8 or 11

A= Assembly Location

Y= Year

WW = Work Week

G= Pb-Free Package

ORDERING INFORMATION

Device	Package	Shipping†
D44H8	TO-220	50 Units/Rail
D44H8G	TO-220	50 Units/Rail
	(Pb-Free)
D44H11	TO-220	50 Units/Rail
D44H11G	TO-220	50 Units/Rail
	(Pb-Free)
D45H8	TO-220	50 Units/Rail
D45H8G	TO-220	50 Units/Rail
	(Pb-Free)
D45H11	TO-220	50 Units/Rail
D45H11G	TO-220	50 Units/Rail
	(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2007	1	Publication Order Number:
November, 2007 - Rev. 10		D44H/D

D44H Series (NPN),

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage	D44H8, D45H8	VCEO(sus)	60	-	-	Vdc
(IC = 30 mAdc, IB = 0 Adc)	D44H11, D45H11		80	-	-
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)		ICES	-	-	10	mA
Emitter Cutoff Current (VEB = 5.0 Vdc)		IEBO	-	-	10	mA
ON CHARACTERISTICS
DC Current Gain		hFE				-
(VCE = 1.0 Vdc, IC = 2.0 Adc)			60	-	-
(VCE = 1.0 Vdc, IC = 4.0 Adc)			40	-	-
Collector-Emitter Saturation Voltage		VCE(sat)				Vdc
(IC = 8.0 Adc, IB = 0.4 Adc)			-	-	1.0
Base-Emitter Saturation Voltage		VBE(sat)	-	-	1.5	Vdc
(IC = 8.0 Adc, IB = 0.8 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance		Ccb				pF
(VCB = 10 Vdc, ftest = 1.0 MHz)	D44H Series		-	90	-
	D45H Series		-	160	-
Gain Bandwidth Product		fT				MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)	D44H Series		-	50	-
	D45H Series		-	40	-
SWITCHING TIMES
Delay and Rise Times		td + tr				ns
(IC = 5.0 Adc, IB1 = 0.5 Adc)	D44H Series		-	300	-
	D45H Series		-	135	-
Storage Time		ts				ns
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)	D44H Series		-	500	-
	D45H Series		-	500	-
Fall Time		tf				ns
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)	D44H Series		-	140	-
	D45H Series		-	100	-

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