Siemens SMBTA55, SMBTA56 Datasheet

PNP Silicon AF Transistors	SMBTA 55
	SMBTA 56

●High breakdown voltage

●Low collector-emitter saturation voltage

●Complementary types: SMBTA 05, SMBTA 06 (NPN)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

SMBTA 55

s2H

Q68000-A3386

SOT-23

B

E

C

SMBTA 56

s2G

Q68000-A2882

Maximum Ratings

Parameter	Symbol		Values		Unit
		SMBTA 55		SMBTA 56
Collector-emitter voltage	VCE0	60		80	V
Collector-base voltage	VCB0	60		80
Emitter-base voltage	VEB0		4
Collector current	IC		500		mA
Peak collector current	ICM		1		A
Base current	IB		100		mA
Peak base current	IBM		200
Total power dissipation, TS = 79 ˚C	Ptot		330		mW
Junction temperature	Tj		150		˚C
Storage temperature range	Tstg	– 65 … + 150
Thermal Resistance
Junction - ambient2)	Rth JA		≤ 285		K/W
Junction - soldering point	Rth JS		≤ 215

1)For detailed information see chapter Package Outlines.

2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

SMBTA 55

SMBTA 56

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 1 mA	SMBTA 55		60	–	–
	SMBTA 56		80	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 100 μA	SMBTA 55		60	–	–
	SMBTA 56		80	–	–
Emitter-base breakdown voltage		V(BR)EB0	4	–	–
IE = 10 μA
Collector-base cutoff current		ICB0
VCB = 60 V	SMBTA 55		–	–	100	nA
VCB = 80 V	SMBTA 56		–	–	100	nA
VCB = 60 V, TA = 150 ˚C	SMBTA 55		–	–	20	μA
VCB = 80 V, TA = 150 ˚C	SMBTA 56		–	–	20	μA
Collector cutoff current		ICE0	–	–	100	nA
VCE = 60 V
DC current gain1)		hFE	100	–	–	–
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V			100	130	170
Collector-emitter saturation voltage1)		VCEsat	–	–	0.25	V
IC = 100 mA, IB = 10 mA
Base-emitter saturation voltage1)		VBE	–	–	1.2
IC = 100 mA, VCE = 1 V
AC characteristics
Transition frequency		fT	–	100	–	MHz
IC = 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance		Cobo	–	12	–	pF
VCB = 10 V, f = 1 MHz

1) Pulse test conditions: t ≤ 300 μs, D = 2 %.
Semiconductor Group	2